公开(公告)号：US11910592B2

公开(公告)日：2024-02-20

申请号：US17702190

申请日：2022-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Dongkwan Baek ,  Cheoljin Cho

IPC: H10B12/00

CPC classification number: H10B12/315 ,  H10B12/033 ,  H10B12/34

Abstract: A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.

公开(公告)号：US11798980B2

公开(公告)日：2023-10-24

申请号：US17749240

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonggyu Song ,  Kyooho Jung ,  Younsoo Kim ,  Haeryong Kim ,  Jooho Lee

IPC: H01L21/285 ,  H10B12/00 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L21/28556 ,  H10B12/30

Abstract: A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.

公开(公告)号：US11641730B2

公开(公告)日：2023-05-02

申请号：US17558687

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US20230017348A1

公开(公告)日：2023-01-19

申请号：US17932817

申请日：2022-09-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor memory device includes a capacitor on a substrate. The capacitor includes a first electrode, a second electrode on the first electrode, and a dielectric layer between the first electrode and the second electrode. The second electrode includes a first layer, a second layer, and a third layer. The first layer is adjacent to the dielectric layer, and the third layer is spaced apart from the first layer with the second layer interposed therebetween. A concentration of nickel in the third layer is higher than a concentration of nickel in the first layer.

公开(公告)号：US11476253B2

公开(公告)日：2022-10-18

申请号：US17029238

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung

IPC: H01L27/108 ,  H01L49/02

Abstract: A semiconductor memory device includes a capacitor on a substrate. The capacitor includes a first electrode, a second electrode on the first electrode, and a dielectric layer between the first electrode and the second electrode. The second electrode includes a first layer, a second layer, and a third layer. The first layer is adjacent to the dielectric layer, and the third layer is spaced apart from the first layer with the second layer interposed therebetween. A concentration of nickel in the third layer is higher than a concentration of nickel in the first layer.

公开(公告)号：US11239239B2

公开(公告)日：2022-02-01

申请号：US16795625

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US11227912B2

公开(公告)日：2022-01-18

申请号：US16730290

申请日：2019-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyooho Jung ,  Jeonggyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L29/40 ,  H01L21/44 ,  H01L49/02 ,  H01L21/285 ,  H01L27/108

Abstract: An integrated circuit device includes a lower electrode including a niobium (Nb)-containing layer doped with titanium (Ti), a dielectric layer on the lower electrode, and an upper electrode that covers the dielectric layer.