公开(公告)号：US20210384197A1

公开(公告)日：2021-12-09

申请号：US17407836

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US11778805B2

公开(公告)日：2023-10-03

申请号：US17592555

申请日：2022-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L21/02 ,  H10B12/00 ,  H01L49/02

CPC classification number: H10B12/033 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L28/75 ,  H01L28/91 ,  H10B12/315

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US11600621B2

公开(公告)日：2023-03-07

申请号：US17412801

申请日：2021-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Younsoo Kim ,  Young-lim Park ,  Jeong-Gyu Song ,  Se Hyoung Ahn ,  Changmu An

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.

公开(公告)号：US20220115380A1

公开(公告)日：2022-04-14

申请号：US17558687

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US11133314B2

公开(公告)日：2021-09-28

申请号：US16897589

申请日：2020-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Younsoo Kim ,  Young-lim Park ,  Jeong-Gyu Song ,  Se Hyoung Ahn ,  Changmu An

IPC: H01L27/108 ,  H01L49/02 ,  H01L21/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory device comprises a capacitor that includes a bottom electrode, a top electrode opposite to the bottom electrode across a dielectric layer, and an interface layer between the bottom electrode and the dielectric layer. The interface layer includes a combination of niobium (Nb), titanium (Ti), oxygen (O), and nitrogen (N), and further includes a constituent of the dielectric layer.

公开(公告)号：US12082395B2

公开(公告)日：2024-09-03

申请号：US17407836

申请日：2021-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L21/02 ,  H01L49/02 ,  H10B12/00

CPC classification number: H10B12/033 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L28/75 ,  H01L28/91 ,  H10B12/315

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US11641730B2

公开(公告)日：2023-05-02

申请号：US17558687

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.

公开(公告)号：US11239239B2

公开(公告)日：2022-02-01

申请号：US16795625

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyooho Jung ,  Jeong-Gyu Song ,  Younsoo Kim ,  Jooho Lee

IPC: H01L27/108 ,  H01L49/02

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a capacitor including first and second electrodes and a dielectric layer. The dielectric layer may include a zirconium aluminum oxide layer including a first zirconium region adjacent to the first electrode, a first aluminum region, a second aluminum region adjacent to the second electrode, and a second zirconium region between the first and second aluminum regions. The first and second zirconium regions may include zirconium and oxygen and may be devoid of aluminum. The first and second aluminum regions may include aluminum and oxygen and may be devoid of zirconium. The first aluminum region and the first zirconium region may be spaced apart by a first distance, and the first aluminum region and the second zirconium region may be spaced apart by a second distance shorter than the first distance.