Abstract:
A semiconductor nanoparticle including a first semiconductor nanocrystal including silver, indium, gallium, and sulfur, and a semiconductor nanoparticle including a second semiconductor nanocrystal including zinc, gallium, and sulfur, a method of manufacturing the same, and an electronic device including the same. The semiconductor nanoparticle is configured to emit a green light. The green light has a peak emission wavelength of about 500 nanometers to about 580 nanometers. In the semiconductor nanoparticle, a molar ratio of zinc to indium is about 0.1:1 to about 10:1.
Abstract:
Provided is an apparatus for estimating a target component, the apparatus including a temperature controller configured to modulate temperature of an object, a measurer configured to measure a spectrum for each temperature of the object that changes based on the modulation, and a processor configured to obtain effective optical pathlength vectors corresponding to a temperature change based on the spectrum for each temperature of the object, obtain a representative effective optical pathlength based on the obtained effective optical pathlength vectors, and obtain a target component estimation model based on the obtained representative effective optical pathlength.
Abstract:
An apparatus for obtaining a target signal spectrum includes: a spectrum measurer configured to measure a plurality of spectra from an object; and a processor configured to obtain a difference spectrum matrix by subtracting a reference spectrum from each of the plurality of spectra, and to obtain a spectrum of a target signal based on the obtained difference spectrum matrix.
Abstract:
An apparatus for measuring a spectrum includes a light source array configured to emit light towards an object, a photodetector configured to detect light reflected by the object; and a processor configured to measure, using the light source array and the photodetector, a plurality of temperature correction spectra based on a temperature change of the light source array, obtain a light source temperature drift vector by analyzing the measured plurality of temperature correction spectra, measure, using the light source array and the photodetector, an analysis spectrum by using the light source array and the photodetector, and adjust the measured analysis spectrum to reduce an effect of the temperature change of the light source array by using the obtained light source temperature drift vector.
Abstract:
A window management method in an electronic device and an electronic device thereof are provided. The method includes receiving, by a controller, a user input event generated in association with a selection of an item displayed in a display area of a display; and outputting, to the display, by a display control module, a plurality of windows corresponding to the selected item and information indicating at least one output capable window corresponding to the selected item and available to be output in a specified form in a specified area.
Abstract:
An image forming apparatus is provided. The image forming apparatus, in a case in which a toner on a transfer belt is checked through a sensing unit, is capable of preventing a rotation of a guide roller, which is configured to guide the transfer belt, by use of a regulation device, so that a check error occurring due to vibration of the guide roller is reduced. Thus, the toner on the transfer belt is checked with increased accuracy and precision.
Abstract:
An image forming apparatus including a side cover rotatably installed to open and close an opening provided at a body thereof while rotating, a first transfer unit to which a visible image of photoconductors of developing units is transferred, and a second transfer unit movably installed at the side cover to transfer the visible image to a printing medium, wherein the second transfer unit is provided at both sides thereof with a plurality of guide protrusions to perform a position restriction, and the body is provided at both sidewalls of inside thereof with a plurality of guide members to support the plurality of guide protrusions such that the second transfer unit is supported against both sidewalls of the inside of the body through the guide protrusion and the guide member, thereby reducing a reaction force applied to the side cover.
Abstract:
A method for fabricating a semiconductor device includes loading a substrate into a lower region in a chamber separated by a shower head into the lower region and an upper region, supplying a source gas to the upper region, generating plasma including ions and radicals in the upper region, using a magnetic field and an electric field generated from an antenna on the upper region, and the source gas, supplying the ions and the radicals generated in the upper region into the lower region through a plurality of plasma inlet holes formed to penetrate the shower head in a vertical direction, supplying a process gas into the lower region through a plurality of process gas supply holes formed in the shower head, and forming a deposition film on the substrate inside the lower region, using the ions, the radicals and the process gas.
Abstract:
A semiconductor package includes a first substrate. Solder balls are disposed on a lower surface of the first substrate. A first semiconductor chip is on an upper surface of the first substrate. The solder balls include a first ball disposed in a first direction from a center of the first substrate and spaced apart from the center by a first distance. A second ball is disposed in a third direction from the center between the first and second directions and is spaced apart from the center by a second distance less than or equal to the first distance. A first pitch between the first ball and a first adjacent ball disposed immediately to an outer side in the first direction is less than a second pitch between the first ball and a second adjacent ball disposed immediately adjacent to an inner side in the first direction.
Abstract:
A semiconductor package includes: a first wiring structure including a first wiring layer, and a second wiring layer disposed on the first wiring layer, and connected to a first connecting structure placed disposed on the first wiring layer; a first semiconductor chip disposed on the first wiring structure and connected to the first wiring structure through a first connecting pad disposed on a first side of the first semiconductor chip; a second wiring structure disposed on the first semiconductor chip; and an insulating member disposed between the first and second wiring structures, wherein the first wiring structure further includes a first signal pattern that is electrically connected to the first connecting pad, and the first signal pattern redistributes the first connecting pad to the first connecting structure via the insulating member.