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    Image sensors including pixel groups and electronic devices including image sensors
    22.
    发明授权
    Image sensors including pixel groups and electronic devices including image sensors 有权

    公开(公告)号：US11265489B2

    公开(公告)日：2022-03-01

    申请号：US17326587

    申请日：2021-05-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Seyoung Kim ,  Sanghyuck Moon

    IPC: H04N5/355

    Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

    Image sensor using a boosting capacitor and a negative bias voltage
    26.
    发明授权
    Image sensor using a boosting capacitor and a negative bias voltage 有权

    公开(公告)号：US11637979B2

    公开(公告)日：2023-04-25

    申请号：US16801887

    申请日：2020-02-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyungho Lee ,  Eunsub Shim ,  Jungbin Yun ,  Sungsoo Choi ,  Masato Fujita

    IPC: H04N5/369 ,  H01L23/00 ,  H01L27/146 ,  H04N5/341 ,  H04N5/351 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/374 ,  H04N5/376

    Abstract: An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.

    Image sensor including shared pixels
    27.
    发明授权
    Image sensor including shared pixels 有权

    公开(公告)号：US11282875B2

    公开(公告)日：2022-03-22

    申请号：US16804674

    申请日：2020-02-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim

    IPC: H01L27/146

    Abstract: An image sensor may include a first shared pixel region and a first isolation layer on a substrate, the first isolation layer defining the first shared pixel region. The first shared pixel region may include photo-sensing devices in sub-pixel regions and a first floating diffusion region connected to the photo-sensing devices. The sub-pixel regions may include a first sub-pixel region and a second sub-pixel region that constitute a first pixel group region. The sub-pixel regions may include a third sub-pixel region and a fourth sub-pixel region that constitute a second pixel group region. The first shared pixel region may include first and second well regions doped with first conductivity type impurities. The second well region may be spaced apart from the first well region. The first pixel group region may share a first well region. The second pixel group region may share the second well region.

    Image sensors including pixel groups and electronic devices including image sensors
    28.
    发明授权
    Image sensors including pixel groups and electronic devices including image sensors 有权

    公开(公告)号：US11044427B2

    公开(公告)日：2021-06-22

    申请号：US16841796

    申请日：2020-04-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Seyoung Kim ,  Sanghyuck Moon

    IPC: H04N5/355

    Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

    IMAGE SENSOR INCLUDING SHARED PIXELS
    29.
    发明申请
    IMAGE SENSOR INCLUDING SHARED PIXELS 审中-公开

    公开(公告)号：US20200328238A1

    公开(公告)日：2020-10-15

    申请号：US16804674

    申请日：2020-02-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim

    IPC: H01L27/146

    Abstract: An image sensor may include a first shared pixel region and a first isolation layer on a substrate, the first isolation layer defining the first shared pixel region. The first shared pixel region may include photo-sensing devices in sub-pixel regions and a first floating diffusion region connected to the photo-sensing devices. The sub-pixel regions may include a first sub-pixel region and a second sub-pixel region that constitute a first pixel group region. The sub-pixel regions may include a third sub-pixel region and a fourth sub-pixel region that constitute a second pixel group region. The first shared pixel region may include first and second well regions doped with first conductivity type impurities. The second well region may be spaced apart from the first well region. The first pixel group region may share a first well region. The second pixel group region may share the second well region.

    IMAGE SENSORS INCLUDING PIXEL GROUPS AND ELECTRONIC DEVICES INCLUDING IMAGE SENSORS
    30.
    发明申请
    IMAGE SENSORS INCLUDING PIXEL GROUPS AND ELECTRONIC DEVICES INCLUDING IMAGE SENSORS 审中-公开

    公开(公告)号：US20200322553A1

    公开(公告)日：2020-10-08

    申请号：US16841796

    申请日：2020-04-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Eunsub Shim ,  Seyoung Kim ,  Sanghyuck Moon

    IPC: H04N5/355

    Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

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