公开(公告)号：US20210351165A1

公开(公告)日：2021-11-11

申请号：US17077302

申请日：2020-10-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongsoo LEE ,  Seogho LIM ,  Changho SHIN ,  Jongpil WON ,  Sangsu LEE

IPC: H01L25/075 ,  H01L33/60 ,  G02F1/13357 ,  H05K1/02

Abstract: A light emitting device includes a printed circuit board (PCB) substrate, a first ink layer covering the PCB substrate, the first ink layer having a first refractive index, light emitters on the first ink layer, and a second ink layer on the first ink layer and spaced apart from the light emitters, the second ink layer having a second refractive index different from the first refractive index.

公开(公告)号：US20210279589A1

公开(公告)日：2021-09-09

申请号：US17258617

申请日：2019-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongsoo LEE ,  Parichay KAPOOR ,  Byeoungwook KIM

IPC: G06N3/08 ,  G06K9/62

Abstract: Disclosed is an electronic device. The electronic device comprises a storage in which sample data and a matrix included in an artificial intelligence model which is trained on the basis of the sample data are stored, and a processor, wherein the processor is configured to: on the basis of the sizes of a plurality of elements included in the matrix, obtain a first matrix pruned by converting values of elements in the number corresponding to a first proportion to zero values; on the basis of test data, obtain first accuracy of an artificial intelligence model including the first matrix; if the first accuracy is within a preset range with respect to a preset value, retrain the artificial intelligence model including the first matrix on the basis of the sample data; and, on the basis of the sizes of a plurality of elements included in the retrained first matrix, obtain a second matrix pruned by converting values of elements in the number corresponding to a second proportion, which is greater than the first proportion, to zero values.

公开(公告)号：US20210271981A1

公开(公告)日：2021-09-02

申请号：US17171582

申请日：2021-02-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo LEE ,  Baeseong PARK ,  Byeoungwook KIM ,  Sejung KWON ,  Yongkweon JEON

IPC: G06N3/10 ,  G06F17/16 ,  G06N3/08

Abstract: An electronic apparatus performing an operation of a neural network model is provided. The electronic apparatus includes a memory configured to store weight data including quantized weight values of the neural network model; and a processor configured to obtain operation data based on input data and binary data having at least one bit value different from each other, generate a lookup table by matching the operation data with the binary data, identify operation data corresponding to the weight data from the lookup table, and perform an operation of the neural network model based on the identified operation data.

公开(公告)号：US20210111741A1

公开(公告)日：2021-04-15

申请号：US17130538

申请日：2020-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo LEE ,  Sejung KWON ,  Byeoungwook KIM ,  Parichay KAPOOR ,  Baeseong PARK

IPC: H03M13/00 ,  G06N3/06 ,  H03M13/11 ,  H03M13/27

Abstract: A decompression apparatus is provided. The decompression apparatus includes a memory configured to store compressed data decompressed and used in neural network processing of an artificial intelligence model, a decoder configured to include a plurality of logic circuits related to a compression method of the compressed data, decompress the compressed data through the plurality of logic circuits based on an input of the compressed data, and output the decompressed data, and a processor configured to obtain data of a neural network processible form from the data output from the decoder.

公开(公告)号：US20200035678A1

公开(公告)日：2020-01-30

申请号：US16592330

申请日：2019-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo LEE ,  Wonkeun Chung ,  Hoonjoo Na ,  Suyoung Bae ,  Jaeyeol Song ,  Jonghan Lee ,  HyungSuk Jung ,  Sangjin Hyun

IPC: H01L27/092 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L21/8238

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.