公开(公告)号：US09166062B2

公开(公告)日：2015-10-20

申请号：US14693680

申请日：2015-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-ho Lee ,  Seong-jun Park ,  Kyung-eun Byun ,  David Seo ,  Hyun-jae Song ,  Hyung-cheol Shin ,  Jae-hong Lee ,  Hyun-jong Chung ,  Jin-seong Heo

IPC: H01L21/36 ,  H01L29/786 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/78696 ,  B82Y10/00 ,  H01L29/1095 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78 ,  H01L29/78684 ,  Y10S977/734 ,  Y10S977/842 ,  Y10S977/938

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

公开(公告)号：US08742400B2

公开(公告)日：2014-06-03

申请号：US13861726

申请日：2013-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： David Seo ,  Sang-wook Kim ,  Seong-jun Park ,  Young-jun Yun ,  Yung-hee Yvette Lee ,  Chang-seung Lee

IPC: H01L29/06

CPC classification number: H01L29/775 ,  H01L29/1079 ,  H01L29/1606 ,  H01L29/42376 ,  H01L29/7781 ,  H01L29/7789

Abstract: A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.

Abstract translation: 石墨烯开关装置在半导体衬底的第一和第二区域中分别包括第一电极和绝缘层，在第一和第二区域之间的半导体衬底的表面上的多个金属颗粒，多个 金属颗粒并在绝缘层上延伸，在第二区域中的石墨烯层上的第二电极，并且被配置为面对绝缘层，构造成覆盖石墨烯层的栅极绝缘层和栅极绝缘层上的栅电极。 半导体衬底在石墨烯层和第一电极之间形成能量势垒。