公开(公告)号：US20200013871A1

公开(公告)日：2020-01-09

申请号：US16425337

申请日：2019-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guk Il AN ,  Keun Hwi CHO ,  Dae Won HA ,  Seung Seok HA

IPC: H01L29/51 ,  H01L23/522 ,  H01L49/02 ,  H01L29/78 ,  H01L27/088

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate and a first conductive connection group on the gate structure. The gate structure includes a gate spacer and a gate electrode. The first conductive connection group includes a ferroelectric material layer. At least a part of the ferroelectric material layer is disposed above an upper surface of the gate spacer. And the ferroelectric material layer forms a ferroelectric capacitor having a negative capacitance in the first conductive connection group.