公开(公告)号：US09559143B2

公开(公告)日：2017-01-31

申请号：US14977094

申请日：2015-12-21

Applicant: Samsung Electronics Co., LTD.

Inventor： Xueti Tang ,  Jang-Eun Lee ,  Gen Feng ,  Dustin William Erickson

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a nonmagnetic spacer layer, and a reference layer. The free layer includes at least one of Fe and at least one Fe alloy. Furthermore, the free layer excludes Co. The nonmagnetic spacer layer adjoins the free layer. The nonmagnetic spacer layer residing between reference layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁结包括自由层，非磁性间隔层和参考层。 自由层包括Fe和至少一种Fe合金中的至少一种。 此外，自由层不包括Co.非磁性间隔层邻接自由层。 位于参考层和自由层之间的非磁性间隔层。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。