Abstract:
A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50.
Abstract:
A method of fabricating a polarizer, the method including, forming a base substrate by sequentially forming a metal layer, a guide layer, a hard mask layer, a sacrificial layer, and a first photoresist layer on a light-transmitting substrate in a panel area and an alignment key area which are spatially separated from each other, forming a first photoresist layer pattern for forming an alignment key pattern in the alignment key area by patterning the first photoresist layer, forming a sacrificial layer pattern in the alignment key area utilizing the first photoresist layer pattern as a mask, and forming a second photoresist layer on a top surface of the sacrificial layer pattern of the alignment key area before removing the sacrificial layer of an aperture area of the panel area.
Abstract:
A pixel may include a pixel circuit layer including at least one transistor and a first electrode disposed on a substrate, and a first insulating layer disposed on the at least one transistor and the first electrode, and a display element layer disposed on the pixel circuit layer, the display element layer including a second electrode electrically connected to the at least one transistor, and a plurality of light emitting elements electrically connected to each of the first and second electrodes. The first electrode and the second electrode may be disposed on different layers and may be spaced apart from each other. The plurality of light emitting elements may overlap the first and second electrodes in a plan view and a cross-sectional view.
Abstract:
A display device including a substrate including a display area and a non-display area, a plurality of signal lines disposed in the display area and extending along a first direction and from the non-display area to the display area, a connection line extending from the non-display area and electrically connected to a respective signal line of the plurality of signal lines in the non-display area, and an initialization voltage line extending in a second direction intersecting the first direction, wherein the connection line overlaps the initialization voltage line in a thickness direction of the display device.
Abstract:
A display device includes a first display area and a second display area adjacent to the first display area in a first direction, driving elements, light-emitting elements including a pixel electrode electrically connected to a corresponding one of the driving elements, signal wirings that transfer a driving signal to the driving elements, and connection wirings that transfer a driving signal to signal wirings disposed in the second display area. At least one of the connection wirings includes a first signal-transferring portion extending in the first direction, a second signal-transferring portion extending in a second direction, and dummy portions extending in a direction intersecting the first and second signal-transferring portions. The pixel electrode overlaps a gap between dummy portions of adjacent connection wirings in an area where the connection wirings are disposed.
Abstract:
A display device includes: a thin film transistor array panel through which an incident light passes; and a color conversion display panel from which wavelength-converted incident light is emitted to display an image, the color conversion display panel including: a substrate facing the thin film transistor array panel; and between the second substrate and the thin film transistor array panel: color conversion patterns which each wavelength-converts the incident light passed through the thin film transistor array panel, and a transmission pattern which transmits the incident light passed through the thin film transistor array panel; a polarization layer disposed respectively between the thin film transistor array panel, and each of the color conversion and transmission pattern; and an imprint resin layer disposed respectively between the polarization layer, and each of the color conversion and transmission pattern, the imprint resin layer defining an uneven surface thereof facing the polarization layer.
Abstract:
Provided is a wire grid polarizing plate. The wire grid polarizing plate comprises a light-transmitting substrate and wire grid patterns which are disposed on the light-transmitting substrate, and which are arranged to transmit first polarized light and to reflect second polarized light polarized in a direction perpendicular to that of the first polarized light, the wire grid patterns comprising target patterns comprising conductive structures shaped as closed curves, at least one of the conductive structures surrounding another one of the conductive structures with a gap therebetween.
Abstract:
A method for fabricating a wire grid polarizer according to an embodiment comprises: forming a conductive layer on a substrate; forming a guide layer on the conductive layer; forming a hard mask pattern to partially expose the guide layer; forming a guide pattern to partially expose the conductive layer; providing a block copolymer of two monomers having different etching rates; forming two sets of monomer blocks by aligning the block copolymer; selectively removing one set of monomer blocks; and forming a conductive wire pattern using the remaining set of monomer blocks and the guide pattern as etching masks. A width of an upper end of the guide pattern adjacent to the hard mask pattern is smaller than a width of a lower end adjacent to the conductive layer. The width of the upper end of the guide pattern is smaller than a width of the hard mask pattern.
Abstract:
A method of forming a micropattern structure includes: coating a structure including a plurality of guide blocks extending in a first direction on a substrate and disposed to be spaced apart from each other in a second direction, which is perpendicular to the first direction, with a sacrificial material; ashing a portion of the sacrificial material to expose upper portions of the plurality of guide blocks; coating the structure with a first material having a polarity that is contrary to a polarity of a filling material filling the structure; heat-treating the structure to chemically bond the first material to the upper portions of the plurality of guide blocks; removing the sacrificial material and excess first material to form a first material cap chemically bonded to the upper portions of the plurality of guide blocks; and filling the structure with the filling material.
Abstract:
A block copolymer includes: a first block, and a second block copolymerized with the first block. The second block includes a silyl group including a ring-type functional group.