公开(公告)号：US11469278B2

公开(公告)日：2022-10-11

申请号：US16921397

申请日：2020-07-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Sung Jin Hong ,  Seung Chan Lee ,  Gun Hee Kim ,  Dong Hyun Kim ,  Sang Hoon Kim ,  Soo Hyun Moon ,  Joo Hee Jeon

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/52

Abstract: A display device is provided including a display area and a non-display area located on a periphery of the display area. The display area includes a sensor area for an optical sensor and a non-sensor area. The display device includes a substrate portion, a thin film transistor (TFT) layer disposed over an entire surface of the substrate portion, and a light emitting diode (LED) disposed on the TFT layer. The TFT layer includes at least one TFT. A thickness of the substrate portion in the sensor area is smaller than a thickness of the substrate portion in the non-sensor area.

公开(公告)号：US11217696B2

公开(公告)日：2022-01-04

申请号：US16354396

申请日：2019-03-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Do Hyung Kim ,  Gun Hee Kim ,  Hyeon Sik Kim ,  Sang Ho Park ,  Joo Hee Jeon

IPC: H01L29/12 ,  H01L29/786 ,  H01L29/417 ,  H01L27/32 ,  H01L29/08

Abstract: A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.

公开(公告)号：US11177341B2

公开(公告)日：2021-11-16

申请号：US16923932

申请日：2020-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dong Hyun Kim ,  Gun Hee Kim ,  Soo Hyun Moon ,  Seung Chan Lee ,  Joo Hee Jeon

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: A display device includes a flexible substrate which includes a first surface and a second surface opposite to the first surface and includes, sequentially, a first portion in the display region, a second portion in the non-display region, a third portion bent in a direction opposite to a display surface, a fourth portion, a fifth portion bent in a direction toward the display surface, and a sixth portion; a plurality of signal wirings on the first surface at the second to sixth portions; and a plurality of first connection wirings on the second surface at the second portion, and the second portion overlaps with the fourth portion, the fifth portion, and the sixth portion, and the signal wirings and the first connection wirings are coupled to each other on the second surface at the second portion.

公开(公告)号：US20210248951A1

公开(公告)日：2021-08-12

申请号：US17110109

申请日：2020-12-02

Applicant: Samsung Display Co., Ltd.

Inventor： Seung Chan Lee ,  Yoo Min Ko ,  Joo Hee Jeon ,  Sung Jin Hong

IPC: G09G3/32 ,  G09G5/10 ,  H01L25/075 ,  H01L33/58

Abstract: A display device including a display panel having a display area in which a plurality of pixels are arranged, and a light source unit overlapping the display panel and including at least one light source. The light source unit irradiates infrared light to a predetermined region within the display area when displaying an image on the display area to change the luminance of pixels disposed in the predetermined region.

公开(公告)号：US10672911B2

公开(公告)日：2020-06-02

申请号：US16451593

申请日：2019-06-25

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung Ho Jung ,  Chaun Gi Choi ,  Hye Young Park ,  Eun Young Lee ,  Joo Hee Jeon ,  Eun Jeong Cho ,  Bo Geon Jeon ,  Yung Bin Chung

IPC: H01L27/12 ,  H01L29/786 ,  H01L51/52 ,  H01L51/00 ,  H01L29/78 ,  H01L27/32

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).

公开(公告)号：US10249843B2

公开(公告)日：2019-04-02

申请号：US15269184

申请日：2016-09-19

Applicant: Samsung Display Co., Ltd.

Inventor： Hui-Won Yang ,  Hyeon Sik Kim ,  Hye Hyang Park ,  Eun Young Lee ,  Joo Hee Jeon

IPC: H01L51/52 ,  H01L27/32 ,  H01L51/00

Abstract: A display device includes a substrate including a first area displaying an image and a second area adjacent to the first area, the second area transmitting external light, a first electrode and a second electrode disposed in the first area and overlapping each other, an emission layer disposed between the first electrode and the second electrode in the first area, a first semiconductor layer disposed in the first area, and a second semiconductor layer disposed in the second area.

公开(公告)号：US09647237B2

公开(公告)日：2017-05-09

申请号：US15045688

申请日：2016-02-17

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Seung Ho Jung ,  Chaun Gi Choi ,  Hye Young Park ,  Eun Young Lee ,  Joo Hee Jeon ,  Eun Jeong Cho ,  Bo Geon Jeon ,  Yung Bin Chung

IPC: H01L29/08 ,  H01L51/52 ,  H01L51/00 ,  H01L27/12

CPC classification number: H01L29/78603 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/7849 ,  H01L29/78633 ,  H01L29/7869 ,  H01L51/0097 ,  H01L51/5256 ,  H01L2251/5338 ,  H01L2251/55 ,  Y02E10/549

Abstract: A thin film transistor array panel device comprises: a base substrate; a barrier layer disposed over the base substrate and comprising a plurality of transparent material layers; and an array of thin film transistors disposed over the barrier layer. A difference between a refractive index of the barrier layer and a refractive index of the base substrate may be within about 6%. The transparent material layers may be arranged such that the transparent material layers having compressive residual stress and the transparent material layers having tensile residual stress are alternately stacked. Each of the transparent material layers may comprise silicon oxynitride (SiON).