公开(公告)号：US08963154B2

公开(公告)日：2015-02-24

申请号：US13755730

申请日：2013-01-31

Applicant: Samsung Display Co., Ltd.

Inventor： Sang-Ho Park ,  Su-Hyoung Kang ,  Dong-Hwan Shim ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Min-Jung Lee ,  Yong-Su Lee

IPC: H01L29/04 ,  H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L27/127 ,  H01L21/28008 ,  H01L27/124 ,  H01L27/1262 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/786 ,  H01L29/78633 ,  H01L29/7869

Abstract: A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.

Abstract translation: 薄膜晶体管基板包括基底基板，设置在基底基板上的有源图案，设置在有源图案上的栅极绝缘图案，设置在栅极绝缘图案上并与沟道重叠的栅电极，以及布置的阻光图案 在基底基板和活性图案之间并且具有大于活性图案的尺寸。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。

公开(公告)号：US08791460B2

公开(公告)日：2014-07-29

申请号：US13693423

申请日：2012-12-04

Applicant: Samsung Display Co., Ltd.

Inventor： Dae-Ho Kim ,  Hyun-Jae Na ,  Yong-Su Lee ,  Myoung-Geun Cha ,  Yoon-Ho Khang ,  Sang-Gab Kim ,  Jae-Neung Kim ,  Se-Hwan Yu

IPC: H01L29/10

CPC classification number: H01L29/786 ,  H01L29/4908 ,  H01L29/516 ,  H01L29/66477 ,  H01L29/78618 ,  H01L29/78693

Abstract: A thin film transistor substrate includes a base substrate, an active pattern, a gate insulation pattern and a gate electrode. The active pattern is disposed on the base substrate. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode. The gate insulation pattern and the gate electrode overlap with the channel. The gate insulation pattern is disposed between the channel and the gate electrode. The source electrode and the drain electrode each include a fluorine deposition layer.

Abstract translation: 薄膜晶体管基板包括基底基板，有源图案，栅极绝缘图案和栅电极。 有源图案设置在基底基板上。 有源图案包括源电极，漏电极和设置在源电极和漏极之间的沟道。 栅极绝缘图案和栅电极与沟道重叠。 栅极绝缘图案设置在沟道和栅电极之间。 源电极和漏极各自包括氟沉积层。

公开(公告)号：US20140061632A1

公开(公告)日：2014-03-06

申请号：US13858584

申请日：2013-04-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Min-Jung LEE ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Yong-Su Lee ,  Jin-Young Shim ,  Ji-Seon Lee ,  Kwang-Young Choi

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/7869

Abstract: A thin film transistor substrate including a base substrate; an active pattern disposed on the base substrate and including a source electrode, a drain electrode, and a channel including an oxide semiconductor disposed between the source electrode and the drain electrode; a gate insulation pattern disposed on the active pattern; a gate electrode disposed on the gate insulation pattern and overlapping with the channel; and a light-blocking pattern disposed between the base substrate and the active pattern.

Abstract translation: 1.一种薄膜晶体管基板，包括基底基板; 设置在所述基底基板上的有源图案，包括源电极，漏电极和包括设置在所述源电极和所述漏电极之间的氧化物半导体的沟道; 设置在活动图案上的栅极绝缘图案; 栅电极，设置在栅极绝缘图案上并与沟道重叠; 以及设置在基底基板和活性图案之间的遮光图案。