Display apparatus and method of manufacturing the same

    公开(公告)号:US11917870B2

    公开(公告)日:2024-02-27

    申请号:US17328679

    申请日:2021-05-24

    CPC classification number: H10K59/126 H10K59/1213 H10K59/1201

    Abstract: A display apparatus includes: a substrate including a first area, and a second area adjacent to the first area; a plurality of first pixel circuits at the first area of the substrate, each of the plurality of first pixel circuits including a silicon-based transistor, and an oxide-based transistor; a plurality of second pixel circuits at the second area of the substrate, the plurality of second pixel circuits including transistors; a first shielding layer at the first area, the first shielding layer including a shielding pattern overlapping with the silicon-based transistor of each of the plurality of first pixel circuits; and a second shielding layer at the second area, the second shielding layer including a first through-hole between adjacent second pixel circuits from among the plurality of second pixel circuits. The first shielding layer and the second shielding layer include different materials from each other.

    DISPLAY PANEL
    23.
    发明公开
    DISPLAY PANEL 审中-公开

    公开(公告)号:US20230157074A1

    公开(公告)日:2023-05-18

    申请号:US18096623

    申请日:2023-01-13

    CPC classification number: H10K59/1213 H10K59/126 H10K59/131 H01L27/1225

    Abstract: A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.

    Display apparatus and method of manufacturing the same

    公开(公告)号:US11250234B2

    公开(公告)日:2022-02-15

    申请号:US17213127

    申请日:2021-03-25

    Abstract: A method of manufacturing a display apparatus includes: forming first patterns of a semiconductor material on a base layer; forming a first insulating layer covering the first patterns; forming second patterns of a conductive material on the first insulating layer; removing at least a portion of at least one of the second patterns; and forming a second insulating layer on the second patterns. Each of the second patterns includes a first layer and a second layer disposed on the first layer, the first patterns include a semiconductor pattern, the second patterns include a control electrode pattern overlapping with the semiconductor pattern in a plan view and a sensing electrode pattern, the second layer of the control electrode pattern fully covers the first layer of the control electrode pattern, and the second layer of the sensing electrode pattern is partially removed in the removing of the at least a portion to partially cover the first layer of the sensing electrode pattern.

    Display apparatus and method of manufacturing the same

    公开(公告)号:US10977471B2

    公开(公告)日:2021-04-13

    申请号:US15961513

    申请日:2018-04-24

    Abstract: A display apparatus includes a display panel, a thin film transistor including a control electrode disposed on a surface of the display panel, a semiconductor pattern overlapping with the control electrode in a plan view, an input electrode connected to a portion of the semiconductor pattern, and an output electrode connected to another portion of the semiconductor pattern, a first insulating layer disposed between the control electrode and the semiconductor pattern, a second insulating layer covering the input electrode and the output electrode, and a sensing electrode disposed between the display panel and the second insulating layer.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20180314363A1

    公开(公告)日:2018-11-01

    申请号:US15961513

    申请日:2018-04-24

    Abstract: A display apparatus includes a display panel, a thin film transistor including a control electrode disposed on a surface of the display panel, a semiconductor pattern overlapping with the control electrode in a plan view, an input electrode connected to a portion of the semiconductor pattern, and an output electrode connected to another portion of the semiconductor pattern, a first insulating layer disposed between the control electrode and the semiconductor pattern, a second insulating layer covering the input electrode and the output electrode, and a sensing electrode disposed between the display panel and the second insulating layer.

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