公开(公告)号：US11281882B2

公开(公告)日：2022-03-22

申请号：US17213127

申请日：2021-03-25

Applicant: Samsung Display Co., Ltd.

Inventor： Ju-won Yoon ,  Moosoon Ko ,  Youngwoo Park ,  Seongjun Lee

IPC: H01L27/12 ,  G06K9/00

Abstract: A method of manufacturing a display apparatus includes: forming first patterns of a semiconductor material on a base layer; forming a first insulating layer covering the first patterns; forming second patterns of a conductive material on the first insulating layer; removing at least a portion of at least one of the second patterns; and forming a second insulating layer on the second patterns. Each of the second patterns includes a first layer and a second layer disposed on the first layer, the first patterns include a semiconductor pattern, the second patterns include a control electrode pattern overlapping with the semiconductor pattern in a plan view and a sensing electrode pattern, the second layer of the control electrode pattern fully covers the first layer of the control electrode pattern, and the second layer of the sensing electrode pattern is partially removed in the removing of the at least a portion to partially cover the first layer of the sensing electrode pattern.

公开(公告)号：US11250234B2

公开(公告)日：2022-02-15

申请号：US17213127

申请日：2021-03-25

Applicant: Samsung Display Co., Ltd.

Inventor： Ju-won Yoon ,  Moosoon Ko ,  Youngwoo Park ,  Seongjun Lee

IPC: H01L27/12 ,  G06K9/00

Abstract: A method of manufacturing a display apparatus includes: forming first patterns of a semiconductor material on a base layer; forming a first insulating layer covering the first patterns; forming second patterns of a conductive material on the first insulating layer; removing at least a portion of at least one of the second patterns; and forming a second insulating layer on the second patterns. Each of the second patterns includes a first layer and a second layer disposed on the first layer, the first patterns include a semiconductor pattern, the second patterns include a control electrode pattern overlapping with the semiconductor pattern in a plan view and a sensing electrode pattern, the second layer of the control electrode pattern fully covers the first layer of the control electrode pattern, and the second layer of the sensing electrode pattern is partially removed in the removing of the at least a portion to partially cover the first layer of the sensing electrode pattern.

公开(公告)号：US20180314363A1

公开(公告)日：2018-11-01

申请号：US15961513

申请日：2018-04-24

Applicant: Samsung Display Co., Ltd.

Inventor： Ju-won Yoon ,  Moosoon Ko ,  Youngwoo Park ,  Seongjun Lee

IPC: G06F3/044 ,  H01L27/12

Abstract: A display apparatus includes a display panel, a thin film transistor including a control electrode disposed on a surface of the display panel, a semiconductor pattern overlapping with the control electrode in a plan view, an input electrode connected to a portion of the semiconductor pattern, and an output electrode connected to another portion of the semiconductor pattern, a first insulating layer disposed between the control electrode and the semiconductor pattern, a second insulating layer covering the input electrode and the output electrode, and a sensing electrode disposed between the display panel and the second insulating layer.