公开(公告)号：US10192992B2

公开(公告)日：2019-01-29

申请号：US15704063

申请日：2017-09-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L27/32

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US10132977B2

公开(公告)日：2018-11-20

申请号：US15048076

申请日：2016-02-19

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Ha Son ,  Jae Neung Kim ,  Yong Hwan Ryu

IPC: G02B5/30

Abstract: A wire grid polarizer plate includes: a transparent substrate through which incident light is transmitted; and a partition wall member on the transparent substrate and at which first polarized light is transmitted and second polarized light perpendicular to the first polarized light is reflected. The partition wall member is defined by: first partition walls spaced apart from each other on the transparent substrate, the first partition walls formed of a first metal; second partition walls respectively on the first partition walls, the second partition walls formed of a second metal having strength greater than that of the first metal; and third reinforced partition walls respectively on the second partition walls and having a stepped cross-sectional structure, the third partition walls formed of an oxide of the first metal, the oxide of the first metal having strength greater than the strength of the second metal.

公开(公告)号：US09990097B2

公开(公告)日：2018-06-05

申请号：US15072624

申请日：2016-03-17

Applicant: Samsung Display Co., Ltd.

Inventor： Sung Kyun Park ,  Jae Neung Kim ,  Ki Hyun Cho ,  Sun Haeng Cho ,  Cheol Kyu Kim

IPC: G06F3/041 ,  G06F3/044

CPC classification number: G06F3/044 ,  G06F2203/04103

Abstract: A touch screen panel includes a substrate, a sensing electrode, a connection wire, and a passivation layer. The substrate includes a first area and a second area disposed outside the first area. The sensing electrode is disposed in the first area. The connection wire is electrically connected to the sensing electrode, the connection wire being disposed in the second area. The passivation layer covers portions of the sensing electrode and the connection wire. The sensing electrode includes a first conductive layer disposed on the substrate. The connection wire includes a second conductive layer disposed on the substrate, a metal wiring layer disposed on the second conductive layer, and a capping layer disposed on the second conductive layer.

公开(公告)号：US09379252B2

公开(公告)日：2016-06-28

申请号：US14666461

申请日：2015-03-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。 源电极和漏电极彼此面对。 源电极和漏电极分别位于氧化物半导体的两个相对侧。 低导电区域位于源电极或漏电极与氧化物半导体之间。 绝缘层位于氧化物半导体和低导电区域上。 栅电极位于绝缘层上。 绝缘层覆盖氧化物半导体和低导电区域。 低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。

公开(公告)号：US08987047B2

公开(公告)日：2015-03-24

申请号：US14184361

申请日：2014-02-19

Applicant: Samsung Display Co., Ltd.

Inventor： Yong Su Lee ,  Yoon Ho Khang ,  Dong Jo Kim ,  Hyun Jae Na ,  Sang Ho Park ,  Se Hwan Yu ,  Chong Sup Chang ,  Dae Ho Kim ,  Jae Neung Kim ,  Myoung Geun Cha ,  Sang Gab Kim ,  Yu-Gwang Jeong

IPC: H01L21/00 ,  H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。 源电极和漏电极彼此面对。 源电极和漏电极分别位于氧化物半导体的两个相对侧。 低导电区域位于源电极或漏电极与氧化物半导体之间。 绝缘层位于氧化物半导体和低导电区域上。 栅电极位于绝缘层上。 绝缘层覆盖氧化物半导体和低导电区域。 低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。