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公开(公告)号：US20230189585A1
公开(公告)日：2023-06-15
申请号：US17943133
申请日：2022-09-12
Applicant: Samsung Display Co., Ltd.
Inventor： Yun Yong NAM , So Young KOO , Eok Su KIM , Hyung Jun KIM , Jun Hyung LIM , Kyung Jin JEON
CPC classification number: H01L27/3276 , H01L51/56 , H01L51/5253 , H01L51/524 , H01L27/3246 , H01L27/3272
Abstract: The present disclosure relates to a display panel and a method for fabricating the same. According to an embodiment, a method for fabricating a display panel, comprises disposing a circuit array and connection lines on the support substrate, the circuit array disposed in the display area, the connection lines disposed in a non-display area; disposing a via layer on the support substrate; providing a sealing hole surrounding the display area by patterning the via layer; disposing a sealing member surrounding the display area on an encapsulation substrate. In the disposing of the circuit array and the connection lines comprises disposing an active layer overlapping a light shielding member and disposing an etch stopper corresponding to at least a portion of an overlapping area between the sealing hole and the first connecting line part, by patterning a semiconductor material layer on the buffer layer.
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公开(公告)号：US20230135686A1
公开(公告)日：2023-05-04
申请号：US17944888
申请日：2022-09-14
Inventor： Hyung Jun KIM , Hyungjun KIM , Jun Hyung LIM , Hwi YOON , Seung-min CHUNG
Abstract: A transistor includes a semiconductor layer on a substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a second material doped to a first material. The first material includes a compound expressed as XYa of a Chemical Formula. X is one of Mo, W, Zr, or Re, Y is one of S, Se, or Te, and a is a natural number that is equal to or greater than 1. The second material includes at least one of W, Hf, Ta, Ti, Pt, Ni, Ga, or Zr. The second material includes an element that is different from the first material.
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公开(公告)号：US20230030802A1
公开(公告)日：2023-02-02
申请号：US17705566
申请日：2022-03-28
Applicant: Samsung Display Co., LTD.
Inventor： Min Kyu KIM , Hyung Jun KIM , Hong-Ju MUN
Abstract: An inkjet printing method includes: preparing a shape drawing; creating an image for an inkjet printing based on a color table or a boundary table; applying the image for the inkjet printing to an inkjet apparatus; and performing the inkjet printing based on the image by the inkjet apparatus, where the creating the image for the inkjet printing includes converting the shape drawing into a vector image, converting the vector image into a raster image, and converting the raster image into the image for the inkjet printing which is a black-and-white image.
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公开(公告)号：US20220165759A1
公开(公告)日：2022-05-26
申请号：US17469217
申请日：2021-09-08
Applicant: Samsung Display Co., LTD.
Inventor： Kyung Jin JEON , So Young KOO , Eok Su KIM , Hyung Jun KIM , Yun Yong NAM , Jun Hyung LIM
Abstract: A display device and a method of manufacturing a display device are provided. The display device includes a first conductive layer on a substrate, a passivation layer disposed on the first conductive layer and exposing at least a part of the first conductive layer, a second conductive layer disposed on the passivation layer and covering an upper surface of the passivation layer, a via layer on the second conductive layer, a third conductive layer including a first electrode, a second electrode, and a connection pattern, and spaced apart from each other on the via layer, and a light emitting element having ends that are disposed on the first electrode and the second electrode, respectively. The connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer.
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公开(公告)号：US20220115364A1
公开(公告)日：2022-04-14
申请号：US17471581
申请日：2021-09-10
Applicant: Samsung Display Co., LTD.
Inventor： Kyung Jin JEON , So Young KOO , Eok Su KIM , Hyung Jun KIM , Yun Yong NAM , Jun Hyung LIM
Abstract: A display device includes a first conductive layer disposed on a substrate, a passivation layer disposed on the first conductive layer, a second conductive layer disposed on the passivation layer, a via layer disposed on the second conductive layer, a third conductive layer disposed on the via layer, the third conductive layer including a first electrode, a second electrode, a connection pattern, the first electrode, the second electrode, and the connection pattern being spaced apart from each other, and a light emitting element, a first end and a second end of the light emitting element being disposed on the first electrode and the second electrode, respectively, wherein the connection pattern electrically connects the first conductive layer and the second conductive layer through a first contact hole penetrating the via layer and the passivation layer.
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Patent Agency Ranking
公开(公告)号：US20210020872A1
公开(公告)日：2021-01-21
申请号：US16837540
申请日：2020-04-01
Applicant: Samsung Display Co., Ltd.
Inventor： Joon Seok PARK , Yeon Keon MOON , Myoung Hwa KIM , Tae Sang KIM , Hyung Jun KIM , Geun Chul PARK , Sang Woo SOHN , Jun Hyung LIM , Kyung Jin JEON , Hye Lim CHOI
IPC: H01L51/56 , G09G3/3266 , G09G3/325 , H01L29/786 , H01L29/49 , G09G3/3291
Abstract: A display device includes pixels connected to scan lines and data lines intersecting the scan lines, wherein each of the pixels includes a light-emitting element, a driving transistor to control a driving current supplied to the light-emitting element according to a data voltage applied from the data lines, and a switching transistor to apply the data voltage of the data line to the driving transistor according to a scan signal applied from the scan lines. The driving transistor includes a first active layer having an oxide semiconductor and a first gate electrode below the first active layer. The switching transistor includes a second active layer having a same oxide semiconductor as the oxide semiconductor of the first active layer and a second gate electrode below the second active layer. At least one of the driving transistor and the switching transistor includes an oxide layer above each of the active layers.
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27.发明公开公开(公告)号：US20230163217A1
公开(公告)日：2023-05-25
申请号：US17870805
申请日：2022-07-21
Applicant: Samsung Display Co., LTD.
Inventor： Kyoung Won LEE , Eun Hye KO , Yeon Hong KIM , Eun Hyun KIM , Hyung Jun KIM , Sun Hee LEE , Jun Hyung LIM
IPC: H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L29/7869 , H01L27/1225 , H01L27/1218 , H01L29/66969
Abstract: A thin-film transistor includes a light-shielding layer disposed on a substrate, an oxygen supply layer disposed on the light-shielding layer and including a metal oxide, a buffer layer disposed on the substrate and covering the oxygen supply layer, an active layer disposed on the buffer layer, where the active layer includes a channel area overlapping the light-shielding layer, and a first electrode area and a second electrode area respectively in contact with opposing sides of the channel area, a gate insulating layer disposed on the channel area of the active layer.
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公开(公告)号：US20230127261A1
公开(公告)日：2023-04-27
申请号：US17860593
申请日：2022-07-08
Applicant: Samsung Display Co., LTD.
Inventor： Hyung Jun KIM , So Young KOO , Eok Su KIM , Yun Yong NAM , Jun Hyung LIM , Kyung Jin JEON
Abstract: A display device includes a first conductive layer including a first voltage line and a second voltage line, a buffer layer, a semiconductor layer including a first active layer and a second active layer, a first gate insulating layer, a second conductive layer including a first gate electrode overlapping the first active layer and a second gate electrode overlapping the second active layer, a passivation layer, a via layer, a bank pattern layer including a first bank pattern and a second bank pattern partially spaced apart from each other, a third conductive layer including a first electrode and a second electrode spaced apart from each other, and light emitting elements. The passivation layer includes silicon nitride (SiNx), and a ratio of a number of silicon-hydrogen bonds (Si—H) to a number of nitrogen-hydrogen bonds (N—H) in the silicon nitride (SiNx) is in a range of about 1:0.6 to about 1:1.5.
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公开(公告)号：US20220173128A1
公开(公告)日：2022-06-02
申请号：US17398566
申请日：2021-08-10
Applicant: Samsung Display Co., LTD.
Inventor： Hyung Jun KIM , So Young KOO , Eok Su KIM , Yun Yong NAM , Jun Hyung LIM , Kyung Jin JEON
IPC: H01L27/12 , H01L29/786
Abstract: A display device according to an embodiment includes a light blocking layer disposed on a substrate; an oxygen supply layer disposed on and contacting the light blocking layer; a semiconductor layer disposed on the oxygen supply layer; and a light emitting diode electrically connected with the semiconductor layer. The semiconductor layer includes an oxide semiconductor, and the oxygen supply layer includes a metal oxide that includes at least one of indium, zinc, gallium, and tin.
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公开(公告)号：US20220013608A1
公开(公告)日：2022-01-13
申请号：US17220966
申请日：2021-04-02
Applicant: Samsung Display Co., LTD.
Inventor： Hyung Jun KIM , So Young KOO , Eok Su KIM , Yun Yong NAM , Jun Hyung LIM , Kyung Jin JEON
Abstract: A display device includes: a substrate; a first semiconductor layer disposed on the substrate, where the first semiconductor layer includes a channel region and a doped region; a first gate electrode disposed to overlap the channel region of the first semiconductor layer; an intermediate film disposed on the first semiconductor layer and the first gate electrode; and a first electrode disposed on the intermediate film, where an opening is defined through the intermediate film to overlap the doped region of the first semiconductor layer, the doped region of the first semiconductor layer and the first electrode contacts each other through the opening, and an area of a cross-section of the opening parallel to the substrate is in a range of about 49 μm2 to about 81 μm2.
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