摘要:
A composition for preparing poly(imide-benzoxazole) copolymer is described, where the copolymer include: a tetracarboxylic acid dianhydride represented by Chemical Formula 1, a diamine represented by Chemical Formula 2, and a diamine represented by Chemical Formula 3: wherein definitions of groups and variables in Chemical Formulae 1 to 3 are the same as described in the specification.
摘要:
A poly(imide-amide) copolymer or its precursor includes two ends and a main chain located between the two ends, and includes a group represented by Chemical Formula 1 at one end, and a structural unit represented by Chemical Formula 7, and at least one of a structural unit represented by Chemical Formula 2 or a structural unit represented by Chemical Formula 3 in the main chain: wherein, in Chemical Formulae 1, 2, 3, and 7, R1 and Ar1 to Ar4 are the same as defined in the detailed description.
摘要:
Provided are a polymer including a repeating unit represented by Formula 1, a photoresist composition including the polymer, and a method of forming a pattern by using the photoresist composition:
wherein the details of R11, L11, a11, A11−, and B11+in Formula 1 are provided in the present specification.
摘要:
Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.
摘要:
Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1:
wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.
摘要:
Provided are an organic salt represented by Formula 1, a resist composition including the same, and a method of forming a pattern by using the same:
A11+B11− Formula 1
wherein, in Formula 1, A11+ is represented by Formula 1A, and B11− is represented by Formula 1B,
wherein descriptions of R11 to R13, L21, L22, a21, a22, R21, R22, Rf, b22, c11 and n11 in Formulae 1A and 1B are provided herein.
摘要:
Provided are a photoreactive polymer compound including a first repeating unit represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition:
摘要:
Provided are a resist composition and a pattern forming method using the same. The resist composition includes a polymer including a first repeating unit repeating unit Formula 1, a photoacid generator, and an organic solvent.
In Formula 1, L11 to L13, a11 to a13, A11 to A13, R11 to R14, b12 to b14, and p are the same as described in the detailed description.
摘要:
Provided are a resist composition and a pattern forming method using the same. The resist composition may include an organometallic compound represented by Formula 1 below and a polymer repeating unit represented by Formula 2 below.
In Formulas 1 and 2, descriptions of M11, R11, R12, n, A21, L21 to L24, a21 to a24, R21, R22, b22, p, and X21 refer to the specification.
摘要:
Provided are a polymer, a resist composition including the same, and a method of forming a pattern using the resist composition, the polymer including one or more of a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2, and free of a repeating unit of which a structure changes by an acid:
In Formulae 1 and 2, R11 to R16, b12, X−, R21 to R24, b22, and Y are as described in the specification.