公开(公告)号：US20160180925A1

公开(公告)日：2016-06-23

申请号：US14579891

申请日：2014-12-22

Applicant: QUALCOMM Incorporated

Inventor： Xiaonan Chen ,  Zhongze Wang ,  Xia Li

IPC: G11C11/419

CPC classification number: G11C11/419 ,  G11C11/4125 ,  G11C14/0054

Abstract: A method of operation of a static random access memory (SRAM) storage element includes programming a value to the SRAM storage element prior to a power-down event. The method further includes, in response to a power-on event at the SRAM storage element after the power-down event, increasing a supply voltage of the SRAM storage element and sensing a state of the SRAM storage element to determine the value programmed to the SRAM storage element prior to the power-down event. In a particular example, an apparatus includes the SRAM storage element and control circuitry coupled to the SRAM storage element. The control circuitry may be configured to program the value to the SRAM storage element, to increase the supply voltage, and to sense the state of the SRAM storage element to determine the value programmed to the SRAM storage element prior to the power-down event.

Abstract translation: 静态随机存取存储器（SRAM）存储元件的操作方法包括在掉电事件之前将值编程到SRAM存储元件。 该方法还包括响应于在掉电事件之后的SRAM存储元件处的电源接通事件，增加SRAM存储元件的电源电压并感测SRAM存储元件的状态，以确定被编程到 SRAM存储元件在掉电事件之前。 在特定示例中，装置包括耦合到SRAM存储元件的SRAM存储元件和控制电路。 控制电路可以被配置为将值编程到SRAM存储元件，以增加电源电压，并且感测SRAM存储元件的状态以确定在掉电事件之前被编程到SRAM存储元件的值。

公开(公告)号：US20160020220A1

公开(公告)日：2016-01-21

申请号：US14495507

申请日：2014-09-24

Applicant: QUALCOMM Incorporated

Inventor： Xia Li ,  Jeffrey Junhao Xu ,  Xiao Lu ,  Bin Yang ,  Jun Yuan ,  Xiaonan Chen ,  Zhongze Wang

IPC: H01L27/115 ,  G11C16/10 ,  G11C16/26 ,  H01L29/792

CPC classification number: H01L29/792 ,  G11C16/0466 ,  G11C16/10 ,  G11C16/26 ,  G11C17/18 ,  H01L27/11206 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/517

Abstract: An apparatus includes a metal gate, a substrate material, and an oxide layer between the metal gate and the substrate material. The oxide layer includes a hafnium oxide layer contacting the metal gate and a silicon dioxide layer contacting the substrate material and contacting the hafnium oxide layer. The metal gate, the substrate material, and the oxide layer are included in a one-time programmable (OTP) memory device. The OTP memory device includes a transistor. A non-volatile state of the OTP memory device is based on a threshold voltage shift of the OTP memory device.

Abstract translation: 一种装置包括金属栅极，衬底材料和金属栅极和衬底材料之间的氧化物层。 氧化物层包括与金属栅极接触的氧化铪层和与衬底材料接触并与氧化铪层接触的二氧化硅层。 金属栅极，衬底材料和氧化物层包括在一次性可编程（OTP）存储器件中。 OTP存储器件包括晶体管。 OTP存储器件的非易失性状态基于OTP存储器件的阈值电压偏移。