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公开(公告)号：US20160181475A1
公开(公告)日：2016-06-23
申请号：US14941686
申请日：2015-11-16
Applicant: PlayNitride Inc.
Inventor： Shen-Jie Wang , Yu-Chu Li
CPC classification number: H01L33/325 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/42
Abstract: A semiconductor light-emitting device including a first type doped semiconductor layer, a second type doped semiconductor layer, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the first type doped semiconductor layer and the second type doped semiconductor layer. The contact layer is disposed on the second type doped semiconductor layer. The second type doped semiconductor layer is disposed between the contact layer and the light-emitting layer. Dopants in the contact layer include a group IVA element and a group IIA element. The group IVA element is an electron donor. The group IIA element is an electron acceptor. The doping concentration of the group IVA element is greater than or equal to 1020 atoms/cm3, and the doping concentration of the group IIA element is greater than or equal to 1020 atoms/cm3.
Abstract translation: 提供了包括第一掺杂半导体层，第二掺杂半导体层，发光层和接触层的半导体发光器件。 发光层设置在第一掺杂半导体层和第二掺杂半导体层之间。 接触层设置在第二类型掺杂半导体层上。 第二种掺杂半导体层设置在接触层和发光层之间。 接触层中的掺杂剂包括IVA族元素和IIA族元素。 IVA族元素是电子给体。 IIA族元素是电子受体。 IVA族元素的掺杂浓度大于或等于1020原子/ cm3，IIA族元素的掺杂浓度大于或等于1020原子/ cm3。
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公开(公告)号：US20160181472A1
公开(公告)日：2016-06-23
申请号：US14941683
申请日：2015-11-16
Applicant: PlayNitride Inc.
Inventor： Shen-Jie Wang , Yu-Chu Li
Abstract: A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.
Abstract translation: 提供了包括N型半导体层，多个P型半导体层，发光层和接触层的半导体发光器件。 发光层设置在N型半导体层和整个P型半导体层之间。 P型半导体层设置在接触层和发光层之间。 发光层和接触层之间的所有P型半导体层包括铝。
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公开(公告)号：US11133294B2
公开(公告)日：2021-09-28
申请号：US16539483
申请日：2019-08-13
Applicant: PLAYNITRIDE INC.
Inventor： Pei-Hsin Chen , Yi-Chun Shih , Yi-Ching Chen , Ying-Tsang Liu , Yu-Chu Li
IPC: H01L25/075 , H01L33/58 , H01L33/62
Abstract: A transparent display panel with a light-transmitting substrate, a plurality of top-emitting micro light emitting diodes, a plurality of bottom-emitting micro light emitting diodes, and a light shielding layer. The light transmissive substrate has a surface. These top-emitting micro light emitting diodes and these bottom-emitting micro light emitting diodes are disposed on the surface of the light transmissive substrate. The bottom-emitting micro light emitting diodes has an epitaxial structure and a light shielding member, the epitaxial structure has a pair of upper and lower surfaces on the opposite sides, the lower surface faces toward the light transmissive substrate, and the light shielding member is disposed on the upper surface to shield the light emitted by the bottom-emitting micro light emitting diodes towards the upper surface.
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公开(公告)号：US10790331B2
公开(公告)日：2020-09-29
申请号：US16515267
申请日：2019-07-18
Applicant: PLAYNITRIDE INC.
Inventor： Pei-Hsin Chen , Yi-Ching Chen , Yi-Chun Shih , Yu-Chu Li , Ying-Tsang Liu
Abstract: A display panel comprises a first substrate and a shading layer. The first substrate comprises a plurality of pixel zones arranging in an array form. Each of the pixel zones comprises a first color LED and a second color LED. The first color LED comprise a first light-emitting surface in a display direction. The second color LED comprise a second light-emitting surface in the display direction. An area of the first light-emitting surface is larger than an area of the second light-emitting surface. The shading layer is disposed in the plurality of pixel zones, and the shading layer overlaps some of the first light-emitting surfaces at the display direction.
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公开(公告)号：US10777541B2
公开(公告)日：2020-09-15
申请号：US16164816
申请日：2018-10-19
Applicant: PlayNitride Inc.
Inventor： Ying-Tsang Liu , Yu-Chu Li , Pei-Hsin Chen , Yi-Ching Chen
Abstract: A micro-LED display panel including a substrate, an anisotropic conductive film, and a plurality of micro-LEDs is provided. The anisotropic conductive film is disposed on the substrate. The micro-LEDs and the anisotropic conductive film are disposed at the same side of the substrate, and the micro-LEDs are electrically connected to the substrate through the anisotropic conductive film. Each of the micro-LEDs includes an epitaxial layer and an electrode layer electrically connected to the epitaxial layer, and the electrode layers comprises a first electrode and a second electrode which are located between the substrate and the corresponding epitaxial layer. A ratio of a thickness of each of the electrode layers to a thickness of the corresponding epitaxial layer ranges from 0.1 to 0.5, and a gap between the first electrode and the second electrode of each of the micro-LEDs is in a range of 1 μm to 30 μm.
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Patent Agency Ranking
公开(公告)号：US10777123B2
公开(公告)日：2020-09-15
申请号：US16121634
申请日：2018-09-05
Applicant: PlayNitride Inc.
Inventor： Yu-Chu Li
IPC: G09G3/32 , G09G3/20 , H01L25/075 , H01L27/15
Abstract: A micro light emitting diode display panel including a plurality of pixels and a control element is provided. One of the pixels include a first sub-pixel. The first sub-pixel includes two micro light emitting diodes having different light wavelengths and controlled independently. The control element controls driving currents to the two micro light emitting diodes according to a gray level of the first sub-pixel, wherein a ratio of the driving current of the micro light emitting diode with larger light wavelength to the driving current of the micro light emitting diode with smaller light wavelength increases as the gray level of the first sub-pixel increases. A driving method of the micro light emitting diode display panel is also provided.
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公开(公告)号：US10290622B2
公开(公告)日：2019-05-14
申请号：US15959286
申请日：2018-04-23
Applicant: PlayNitride Inc.
Inventor： Yu-Chu Li , Yu-Hung Lai , Tzu-Yang Lin
IPC: H01L33/48 , H01L25/075 , H01L25/00 , H01L23/00 , H01L21/683 , H01L33/00
Abstract: A method for expanding spacings in a light-emitting element array includes the following steps of: providing a light-emitting element array unit including a stretchable supporting film, and a plurality of light-emitting elements disposed on the stretchable supporting film and arranged into a two-dimensional array; stretching the stretchable supporting film along a first direction and a second direction. The first direction and the second direction respectively correspond to a row direction and a column direction of the two-dimensional array.
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公开(公告)号：US20180374828A1
公开(公告)日：2018-12-27
申请号：US16018080
申请日：2018-06-26
Applicant: PlayNitride Inc.
Inventor： Kuan-Yung Liao , Ching-Liang Lin , Yun-Li Li , Yu-Chu Li
IPC: H01L25/075 , H01L27/12 , H01L33/62
Abstract: A display panel includes a driving substrate and a plurality of micro light emitting diodes (LEDs). The driving substrate has a plurality of pixel regions. The micro LEDs are located on the driving substrate and arranged apart from each other. The micro LEDs at least includes a plurality of first micro LEDs and a plurality of second micro LEDs. Each of the pixel regions is at least provided with one first micro LED and one second micro LED, and the first micro LED and the second micro LED are electrically connected in series.
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公开(公告)号：US20180240941A1
公开(公告)日：2018-08-23
申请号：US15959286
申请日：2018-04-23
Applicant: PlayNitride Inc.
Inventor： Yu-Chu Li , Yu-Hung Lai , Tzu-Yang Lin
IPC: H01L33/48 , H01L23/00 , H01L33/62 , H01L25/075 , H01L25/00
CPC classification number: H01L25/50 , H01L21/6836 , H01L24/83 , H01L24/95 , H01L25/0753 , H01L33/0095 , H01L2221/68336 , H01L2224/83001 , H01L2224/83192 , H01L2224/95001 , H01L2224/97 , H01L2924/0002 , H01L2924/00
Abstract: A method for expanding spacings in a light-emitting element array includes the following steps of: providing a light-emitting element array unit including a stretchable supporting film, and a plurality of light-emitting elements disposed on the stretchable supporting film and arranged into a two-dimensional array; stretching the stretchable supporting film along a first direction and a second direction. The first direction and the second direction respectively correspond to a row direction and a column direction of the two-dimensional array.
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公开(公告)号：US09608161B2
公开(公告)日：2017-03-28
申请号：US14941683
申请日：2015-11-16
Applicant: PlayNitride Inc.
Inventor： Shen-Jie Wang , Yu-Chu Li
Abstract: A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.
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