公开(公告)号：US20160276380A1

公开(公告)日：2016-09-22

申请号：US14662655

申请日：2015-03-19

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Wu-Zang Yang ,  Chia-Ying Liu ,  Chih-Wei Hsiung ,  Chun-Yung Ai ,  Dyson H. Tai ,  Dominic Massetti

IPC: H01L27/146

CPC classification number: H01L27/14692 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14629 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14689 ,  H01L28/55 ,  H01L28/56 ,  H01L28/90

Abstract: An image sensor pixel, and image sensor, and a method of fabricating the same is disclosed. The image pixel includes a photosensitive capacitor and a transistor network. The photosensitive capacitor includes an electrode, a conductive layer, a dielectric layer, and a photosensitive semiconductor material. The conductive layer is disposed around the electrode and the dielectric layer is formed between the conductive layer and the electrode. The photosensitive semiconductor material is for generating an image signal in response to image light and is disposed between the dielectric layer and the electrode. The transistor network is coupled to readout the image signal from the electrode of the photosensitive capacitor.

Abstract translation: 公开了一种图像传感器像素和图像传感器及其制造方法。 图像像素包括光敏电容器和晶体管网络。 感光电容器包括电极，导电层，电介质层和光敏半导体材料。 导电层设置在电极周围，并且介电层形成在导电层和电极之间。 感光半导体材料用于响应于图像光产生图像信号，并且设置在电介质层和电极之间。 晶体管网络被耦合以从光敏电容器的电极读出图像信号。

公开(公告)号：US20160116409A1

公开(公告)日：2016-04-28

申请号：US14526161

申请日：2014-10-28

Applicant: OmniVision Technologies, Inc.

Inventor： Dominic Massetti ,  Bowei Zhang

IPC: G01N21/64 ,  G01N21/05

CPC classification number: B01L3/502715 ,  B01L2300/0654 ,  B01L2300/0663 ,  B01L2300/0877 ,  B01L2300/0887 ,  B01L2400/0487 ,  G01N21/253 ,  G01N21/6454

Abstract: A color-sensitive image sensor with embedded microfluidics includes a silicon substrate having (a) at least one recess partly defining at least one embedded microfluidic channel and (b) a plurality of photosensitive regions for generating position-sensitive electrical signals in response to light from the at least one recess, wherein at least two of the photosensitive regions are respectively located at at least two mutually different depth ranges, relative to the at least one recess, to provide color information. A wafer-level manufacturing method produces a plurality of such color-sensitive image sensors. A method for generating a color image of a fluidic sample includes performing imaging, onto a plurality of photosensitive regions of a silicon substrate, of a fluidic sample deposited in a microfluidic channel embedded in the silicon substrate, and generating color information based upon penetration depth of light into the silicon substrate.

Abstract translation: 具有嵌入式微流体的色敏图像传感器包括硅衬底，其具有（a）部分地限定至少一个嵌入式微流体通道的至少一个凹部和（b）多个感光区域，用于响应于来自 所述至少一个凹部，其中至少两个所述感光区域相对于所述至少一个凹部分别位于至少两个彼此不同的深度范围内，以提供颜色信息。 晶片级制造方法产生多个这样的色敏图像传感器。 一种用于产生流体样品的彩色图像的方法包括：在硅衬底的多个光敏区域上进行沉积在嵌入在硅衬底中的微流体通道中的流体样品的成像，并且基于穿透深度 光入硅衬底。

公开(公告)号：US20160093664A1

公开(公告)日：2016-03-31

申请号：US14500193

申请日：2014-09-29

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Johannes Solhusvik ,  Dominic Massetti

IPC: H01L27/148

CPC classification number: H01L27/14831 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/2351 ,  H04N5/353 ,  H04N5/3535 ,  H04N5/3745 ,  H04N5/37452

Abstract: A pixel cell includes a photodiode coupled to photogenerate image charge in response to incident light. A deep trench isolation structure is disposed proximate to the photodiode to provide a capacitive coupling to the photodiode through the deep trench isolation structure. An amplifier transistor is coupled to the deep trench isolation structure to generate amplified image data in response to the image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure. A row select transistor is coupled to an output of the amplifier transistor to selectively output the amplified image data to a column bitline coupled to the row select transistor.

Abstract translation: 像素单元包括响应于入射光耦合到光生成图像电荷的光电二极管。 深沟槽隔离结构靠近光电二极管设置，以通过深沟槽隔离结构提供与光电二极管的电容耦合。 放大器晶体管耦合到深沟槽隔离结构以响应于通过由深沟槽隔离结构提供的电容耦合从光电二极管读出的图像电荷来产生放大的图像数据。 行选择晶体管耦合到放大器晶体管的输出，以选择性地将放大的图像数据输出到耦合到行选择晶体管的列位线。

公开(公告)号：US08987841B2

公开(公告)日：2015-03-24

申请号：US14205203

申请日：2014-03-11

Applicant: Omnivision Technologies, Inc.

Inventor： Manoj Bikumandla ,  Dominic Massetti

IPC: H01L27/146 ,  G01N27/26 ,  G01N27/414

CPC classification number: G01N27/4148 ,  G01N27/4145

Abstract: A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

Abstract translation: 用于感测从生物，化学，离子，电，机械和磁刺激中选出的至少一种的CMOS（互补金属氧化物半导体）像素。 CMOS像素包括包括背面的衬底，与衬底耦合以产生背景电流的源以及电耦合以测量背景电流的检测元件。 将被提供给背面的刺激影响背景电流的可测量的变化。

公开(公告)号：US20140191294A1

公开(公告)日：2014-07-10

申请号：US14205203

申请日：2014-03-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Manoj Bikumandla ,  Dominic Massetti

IPC: G01N27/414

CPC classification number: G01N27/4148 ,  G01N27/4145

Abstract: A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

Abstract translation: 用于感测从生物，化学，离子，电，机械和磁刺激中选出的至少一种的CMOS（互补金属氧化物半导体）像素。 CMOS像素包括包括背面的衬底，与衬底耦合以产生背景电流的源以及电耦合以测量背景电流的检测元件。 将被提供给背面的刺激影响背景电流的可测量的变化。