公开(公告)号：US08987841B2

公开(公告)日：2015-03-24

申请号：US14205203

申请日：2014-03-11

Applicant: Omnivision Technologies, Inc.

Inventor： Manoj Bikumandla ,  Dominic Massetti

IPC: H01L27/146 ,  G01N27/26 ,  G01N27/414

CPC classification number: G01N27/4148 ,  G01N27/4145

Abstract: A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

Abstract translation: 用于感测从生物，化学，离子，电，机械和磁刺激中选出的至少一种的CMOS（互补金属氧化物半导体）像素。 CMOS像素包括包括背面的衬底，与衬底耦合以产生背景电流的源以及电耦合以测量背景电流的检测元件。 将被提供给背面的刺激影响背景电流的可测量的变化。

公开(公告)号：US20140191294A1

公开(公告)日：2014-07-10

申请号：US14205203

申请日：2014-03-11

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Manoj Bikumandla ,  Dominic Massetti

IPC: G01N27/414

CPC classification number: G01N27/4148 ,  G01N27/4145

Abstract: A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

Abstract translation: 用于感测从生物，化学，离子，电，机械和磁刺激中选出的至少一种的CMOS（互补金属氧化物半导体）像素。 CMOS像素包括包括背面的衬底，与衬底耦合以产生背景电流的源以及电耦合以测量背景电流的检测元件。 将被提供给背面的刺激影响背景电流的可测量的变化。

公开(公告)号：US08680630B2

公开(公告)日：2014-03-25

申请号：US13950116

申请日：2013-07-24

Applicant: Omnivision Technologies, Inc

Inventor： Manoj Bikumandla

IPC: H01L27/146 ,  G01N27/26

CPC classification number: H01L27/00 ,  G01N27/4145 ,  G01N27/4148

Abstract: A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

Abstract translation: 用于感测从生物，化学，离子，电，机械和磁刺激中选出的至少一种的CMOS（互补金属氧化物半导体）像素。 CMOS像素包括包括背面的衬底，与衬底耦合以产生背景电流的源以及电耦合以测量背景电流的检测元件。 将被提供给背面的刺激影响背景电流的可测量的变化。

公开(公告)号：US20130307093A1

公开(公告)日：2013-11-21

申请号：US13950116

申请日：2013-07-24

Applicant: OMNIVISION TECHNOLOGIES, INC

Inventor： Manoj Bikumandla

IPC: H01L27/00

CPC classification number: H01L27/00 ,  G01N27/4145 ,  G01N27/4148

Abstract: A CMOS (Complementary Metal Oxide Semiconductor) pixel for sensing at least one selected from a biological, chemical, ionic, electrical, mechanical and magnetic stimulus. The CMOS pixel includes a substrate including a backside, a source coupled with the substrate to generate a background current, and a detection element electrically coupled to measure the background current. The stimulus, which is to be provided to the backside, affects a measurable change in the background current.

Abstract translation: 用于感测从生物，化学，离子，电，机械和磁刺激中选出的至少一种的CMOS（互补金属氧化物半导体）像素。 CMOS像素包括包括背面的衬底，与衬底耦合以产生背景电流的源以及电耦合以测量背景电流的检测元件。 将被提供给背面的刺激影响背景电流的可测量的变化。