DATA RECOVERY ONCE ECC FAILS TO CORRECT THE DATA
    21.
    发明申请
    DATA RECOVERY ONCE ECC FAILS TO CORRECT THE DATA 有权
    数据恢复一直存在ECC错误以纠正数据

    公开(公告)号:US20150309872A1

    公开(公告)日:2015-10-29

    申请号:US14273920

    申请日:2014-05-09

    Abstract: An apparatus comprising a memory and a controller. The memory is configured to process a plurality of read/write operations. The memory comprises a plurality of memory modules each having a size less than a total size of the memory. The controller is configured to salvage data stored in a failed page of the memory determined to exceed a maximum number of errors. The controller copies raw data stored in the failed page. The controller identifies locations of a first type of data cells that fail erase identification. The controller identifies locations of a second type of data cells that have program errors. The controller flips data values in the raw data at the locations of the first type of data cells and the locations of the second type of data cells. The controller is configured to perform error correcting code decoding on the raw data having flipped data values. The controller salvages data stored in the failed page.

    Abstract translation: 一种包括存储器和控制器的装置。 存储器被配置为处理多个读/写操作。 存储器包括多个存储器模块,每个存储器模块的尺寸小于存储器的总大小。 控制器被配置为打捞存储在存储器的故障页面中的数据,其被确定为超过最大错误数量。 控制器复制存储在失败页面中的原始数据。 控制器识别无法擦除识别的第一类数据单元的位置。 控制器识别具有程序错误的第二类型的数据单元的位置。 控制器在第一类型的数据单元的位置和第二类型的数据单元的位置翻转原始数据中的数据值。 控制器被配置为对具有翻转数据值的原始数据执行纠错码解码。 控制器抢救存储在失败页面中的数据。

    SYSTEM TO CONTROL A WIDTH OF A PROGRAMMING THRESHOLD VOLTAGE DISTRIBUTION WIDTH WHEN WRITING HOT-READ DATA
    22.
    发明申请
    SYSTEM TO CONTROL A WIDTH OF A PROGRAMMING THRESHOLD VOLTAGE DISTRIBUTION WIDTH WHEN WRITING HOT-READ DATA 有权
    在读取数据时控制编程阈值电压分配宽度的系统

    公开(公告)号:US20150235705A1

    公开(公告)日:2015-08-20

    申请号:US14191263

    申请日:2014-02-26

    Abstract: An apparatus comprising a memory and a controller. The memory is configured to process a plurality of read/write operations. The memory comprises a plurality of memory modules. Each memory module has a size less than a total size of the memory. The controller is configured to write user data using a plurality of threshold voltages. The data considered hot-read data is written using a first voltage threshold. The data not considered hot-read data is written using a second voltage threshold. The first voltage threshold reduces an impact on endurance of the memory.

    Abstract translation: 一种包括存储器和控制器的装置。 存储器被配置为处理多个读/写操作。 存储器包括多个存储器模块。 每个存储器模块的尺寸小于存储器的总大小。 控制器被配置为使用多个阈值电压写入用户数据。 使用第一电压阈值写入考虑热读数据的数据。 使用第二电压阈值写入不被认为是热读数据的数据。 第一个电压阈值降低了对存储器耐久性的影响。

    METHOD OF ERASE STATE HANDLING IN FLASH CHANNEL TRACKING
    23.
    发明申请
    METHOD OF ERASE STATE HANDLING IN FLASH CHANNEL TRACKING 有权
    闪频通道跟踪中的擦除状态处理方法

    公开(公告)号:US20150082121A1

    公开(公告)日:2015-03-19

    申请号:US14041110

    申请日:2013-09-30

    Abstract: An apparatus includes a non-volatile memory and a controller. The controller may be configured to track one or more channel parameters of the non-volatile memory. The controller may be further configured to estimate an erase state voltage distribution of the non-volatile memory by selecting one or more parameters of the erase state distribution from a look-up table based upon at least one of the one or more channel parameters.

    Abstract translation: 一种装置包括非易失性存储器和控制器。 控制器可以被配置为跟踪非易失性存储器的一个或多个信道参数。 控制器还可以被配置为基于一个或多个信道参数中的至少一个从查找表中选择一个或多个擦除状态分布的参数来估计非易失性存储器的擦除状态电压分布。

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