公开(公告)号：US20180212081A1

公开(公告)日：2018-07-26

申请号：US15925076

申请日：2018-03-19

Applicant: LG ELECTRONICS INC.

Inventor： Jinsung KIM ,  Sunghyun HWANG ,  Donghae OH

IPC: H01L31/0224 ,  H01L31/05

CPC classification number: H01L31/022425 ,  H01L31/022433 ,  H01L31/0504 ,  H01L31/0508 ,  Y02E10/50

Abstract: A solar cell includes a semiconductor substrate, a conductive region disposed in or on the semiconductor substrate, and an electrode comprising a plurality of finger lines connected to the conductive region, and formed to extend in a first direction while being parallel, and 6 or more bus bar lines formed to extend in a second direction crossing the first direction.

公开(公告)号：US20180204737A1

公开(公告)日：2018-07-19

申请号：US15866052

申请日：2018-01-09

Applicant: LG ELECTRONICS INC.

Inventor： Kyoungsoo LEE ,  Sunghyun HWANG ,  Sangwook PARK

IPC: H01L21/3205 ,  H01L31/072 ,  H01L21/02 ,  H01L21/28

Abstract: A method of manufacturing a solar cell is disclosed. The method of manufacturing the solar cell includes depositing an intrinsic amorphous silicon layer on a surface of a semiconductor substrate, depositing an amorphous silicon layer containing impurities on the intrinsic amorphous silicon layer to form a conductive region, and forming an electrode electrically connected to the conductive region. The depositing of the intrinsic amorphous silicon layer includes depositing the intrinsic amorphous silicon on the surface of the semiconductor substrate at a deposition rate of 0.5 nm/sec to 2.0 nm/sec.

公开(公告)号：US20170125616A1

公开(公告)日：2017-05-04

申请号：US15407812

申请日：2017-01-17

Applicant: LG ELECTRONICS INC.

Inventor： Sunghyun HWANG ,  Jinsung KIM ,  Hyunho LEE ,  Haejong CHO ,  Donghae OH

IPC: H01L31/0224 ,  H01L31/05 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0352

CPC classification number: H01L31/022433 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/068 ,  H01L31/0684 ,  Y02E10/50 ,  Y02E10/547

Abstract: A solar cell includes a substrate having a front surface and a back surface; an emitter formed on the front surface of the substrate; a plurality of first electrodes positioned on the emitter and extended in first direction; a plurality of first bus lines positioned on the emitter and extended in second direction crossing to the first direction; a plurality of back surface field regions formed on the back surface of the substrate and extended in the first direction; a plurality of second electrodes positioned on the plurality of back surface field regions and extended in the first direction; and, a plurality of second bus lines extended in the second direction.

公开(公告)号：US20150090323A1

公开(公告)日：2015-04-02

申请号：US14478935

申请日：2014-09-05

Applicant: LG ELECTRONICS INC.

Inventor： Jeongkyu KIM ,  Sunghyun HWANG ,  Daeyong LEE

IPC: H01L31/0352

Abstract: Discussed is a solar cell including a semiconductor substrate comprising a base region, an emitter region having a conductive type opposite to that of the base region, and a back surface field region having the same conductive type as the base region and a higher doping concentration than the base region, and a first electrode and a second electrode respectively connected to the emitter region and the back surface field region, wherein the base region has a specific resistance of 0.3 Ωcm to 2.5 Ωcm.

Abstract translation: 讨论了包括半导体衬底的太阳能电池，该半导体衬底包括基极区域，具有与基极区域相反的导电类型的发射极区域和与基极区域具有相同导电类型的背表面场区域，并且掺杂浓度高于 所述基极区域以及分别连接到所述发射极区域和所述背面场区域的第一电极和第二电极，其中所述基极区域的电阻率为0.3Ω·cm·cm〜2.5Ω·cm·cm。