Abstract:
The disclosure is directed to a system and method for inspecting a spinning sample by substantially simultaneously scanning multiple spots on a surface of the sample utilizing a plurality of illumination beams. Portions of illumination reflected, scattered, or radiated from respective spots on the surface of the sample are collected by at least one detector array. Information associated with at least one defect of the sample is determined by at least one computing system in communication with the detector array. According to various embodiments, at least one of scan pitch, spot size, spot separation, and spin rate is controlled to compensate pitch error due to tangential spot separation.
Abstract:
A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.
Abstract:
The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.