公开(公告)号：USD807524S1

公开(公告)日：2018-01-09

申请号：US29563474

申请日：2016-05-05

Applicant: Industrial Technology Research Institute

Designer： Zhi-Wei Koh ,  Yen-Hsiang Fang ,  Chen-Peng Hsu ,  Chien-Chun Lu

公开(公告)号：US09425359B2

公开(公告)日：2016-08-23

申请号：US14586911

申请日：2014-12-30

Applicant: Industrial Technology Research Institute ,  TYNTEK CORPORATION

Inventor： Yao-Jun Tsai ,  Shih-Yi Wen ,  Chen-Peng Hsu ,  Hung-Lieh Hu ,  Chia-Chun Yu ,  Yen-Chu Li ,  Chun-Yi Tung

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/20 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/405 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/17 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.

Abstract translation: 发光二极管包括半导体层叠结构，基板，第一电极，第二电极和第三电极。 半导体堆叠结构包括第一半导体层，第二半导体层和发光层。 可以不去除或不完全去除第一半导体层上的未掺杂的半导体层以增加半导体堆叠结构的强度，并且提高LED的可靠性和制造工艺的生产率。 当半导体堆叠结构提高LED的发光效率时，可以在未掺杂的半导体层上形成粗糙结构（或光子晶体）。

公开(公告)号：USD728833S1

公开(公告)日：2015-05-05

申请号：US29453476

申请日：2013-04-30

Applicant: Industrial Technology Research Institute

Designer： Chao-Wei Lee ,  Hung-Lieh Hu ,  Cheng-Da Shaw ,  Chen-Peng Hsu

公开(公告)号：US20150108526A1

公开(公告)日：2015-04-23

申请号：US14586911

申请日：2014-12-30

Applicant: Industrial Technology Research Institute ,  TYNTEK CORPORATION

Inventor： Yao-Jun Tsai ,  Shih-Yi Wen ,  Chen-Peng Hsu ,  Hung-Lieh Hu ,  Chia-Chun Yu ,  Yen-Chu Li ,  Chun-Yi Tung

IPC: H01L33/22 ,  H01L33/60 ,  H01L33/58 ,  H01L33/38

CPC classification number: H01L33/382 ,  H01L33/20 ,  H01L33/38 ,  H01L33/385 ,  H01L33/405 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/17 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.

Abstract translation: 发光二极管包括半导体层叠结构，基板，第一电极，第二电极和第三电极。 半导体堆叠结构包括第一半导体层，第二半导体层和发光层。 可以不去除或不完全去除第一半导体层上的未掺杂的半导体层以增加半导体堆叠结构的强度，并且提高LED的可靠性和制造工艺的生产率。 当半导体堆叠结构提高LED的发光效率时，可以在未掺杂的半导体层上形成粗糙结构（或光子晶体）。

公开(公告)号：US20150061084A1

公开(公告)日：2015-03-05

申请号：US14472391

申请日：2014-08-29

Applicant: Industrial Technology Research Institute

Inventor： Yao-Jun Tsai ,  Chen-Peng Hsu ,  Shih-Yi Wen ,  Chi-Chin Yang ,  Hung-Lieh Hu

IPC: H01L23/48 ,  H01L29/866 ,  H01L23/00 ,  H01L33/20 ,  H01L33/62 ,  H01L21/768 ,  H01L21/306 ,  H01L27/02

CPC classification number: H01L23/481 ,  G02B6/12 ,  G02B6/34 ,  G02B2006/12061 ,  H01L21/30604 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/60 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/80 ,  H01L25/167 ,  H01L27/0255 ,  H01L29/861 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/06102 ,  H01L2224/08148 ,  H01L2224/08238 ,  H01L2224/16148 ,  H01L2224/16238 ,  H01L2224/29294 ,  H01L2224/32148 ,  H01L2224/32238 ,  H01L2224/48091 ,  H01L2224/48105 ,  H01L2224/48148 ,  H01L2224/48229 ,  H01L2224/73265 ,  H01L2224/80801 ,  H01L2224/80805 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83805 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2933/0066 ,  H01S5/0208 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/34 ,  H01L2924/00 ,  H01L2224/80 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: Provided is a substrate, including a substrate material, two conductive structures, and at least one diode. The two conductive structures extend from a first surface of the substrate material to a second surface of the substrate material via two through holes penetrating through the substrate material. The at least one diode is embedded in the substrate material at a sidewall of one of the through holes.

Abstract translation: 提供了包括基板材料，两个导电结构和至少一个二极管的基板。 两个导电结构通过穿过衬底材料的两个通孔从衬底材料的第一表面延伸到衬底材料的第二表面。 所述至少一个二极管被嵌入在所述通孔之一的侧壁处的所述衬底材料中。