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公开(公告)号：US07399577B2
公开(公告)日：2008-07-15
申请号：US10543429
申请日：2004-02-09
IPC分类号： G03C5/00 , C07C255/50 , C07C251/32
CPC分类号： C07C251/48 , B33Y70/00 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/40 , C07D209/86 , C07D307/91 , C07D333/76 , G03F7/0007 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Compounds of the formula (I) or (II) wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2- C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10 haloalkyl; Arl is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphonylene, heteroarylene, oxydiphenylene, phenyleneD-D1-D-phenylene or —Ar′1-A1—Y1-A1—Ar′1—; wherein these radicals optionally are substituted; Ae′, is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A, is for example a direct bond, —0—, —S—, or —NR6—; Y, inter alia is C1-C18alkylene; X is halogen; D is for example —0—, —S— or —NR6—; D, inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要翻译： 式（I）或（II）的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 卤代烷酰基，卤代苯甲酰基， R 2是卤素或C 1 -C 10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1是例如亚苯基，亚萘基，二亚苯基，亚杂芳基，氧联二苯基，亚苯基D-D 1-D-亚苯基或-Ar' -A 1 -Y 1-A 1 -Ar'1 - ; - - - - 其中这些基团任选被取代; Ae'是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部任意取代; A是例如直接键，-O - ， - S-或-NR 6 - 。 Y尤其是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - 。 D，尤其是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特别适合作为光潜酸。
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公开(公告)号：US07326511B2
公开(公告)日：2008-02-05
申请号：US10495710
申请日：2003-01-28
CPC分类号： G03F7/0037 , B33Y70/00 , C07C323/66 , C07C381/00 , G03F7/001 , G03F7/0045 , G03F7/038 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/0758 , Y10S430/114
摘要： Chemically amplified photoresist compositions comprising, (a) a compound which cures upon the action of an acid or a compound whose solubility is increased upon the action of an acid; and (b) a compound of the formula (Ia), (Ib), (IIa), (IIb), (IIIa), (IIIb), (Iva), (Ivb), (Va), (Vb) or (VIa), wherein n is 1 or 2; m is 0 or 1; X0 is —[CH2]h—X or —CH═CH2; h is 2, 3, 4, 5 or 6; R1 when n is 1, is for example optionally substituted phenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl; R1, when n is 2, is for example optionally substituted phenylene or naphthylene; R2 for example has one of the meanings of R1; X is for example —OR20, —NR21R22, —SR23; X′ is -X1-A3-X2-; X1 and X2 are for example —O—, —S— or a direct bond; A3 is e.g. phenylene; R3 has for example one of the meanings given for R1; R4 has for example one of the meaning given for R2; R5 and R6 e.g. are hydrogen; G i.a. is —S— or —O—; R7 when n is 1, e.g. is phenyl, optionally substituted, when n is 2, is for example phenylene; R8 and R9 e.g. are C1-C18alkyl; R10 has one of the meanings given for R7; R11 i.a. is C1-C18alkyl; R12, R13, R14, R15 R16, R17 and R18 for example are hydrogen or C1-C18alkyl; R20, R21, R22 and R23 i.a are phenyl or C1-C18alkyl; give high resolution with good resist profile
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公开(公告)号：US20060246377A1
公开(公告)日：2006-11-02
申请号：US10543429
申请日：2004-02-09
IPC分类号： G03C5/00 , C07C255/50 , C07C251/32
CPC分类号： C07C251/48 , B33Y70/00 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/40 , C07D209/86 , C07D307/91 , C07D333/76 , G03F7/0007 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Compounds of the formula (I) or (II) wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10 haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphonylene, heteroarylene, oxydiphenylene, phenyleneD-D1-D-phenylene or —Ar′1-A1-Y1-A1-Ar′1—; wherein these radicals optionally are substituted; Ae′, is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A, is for exampfe a direct bond, -0-, —S—, or —NR6—; Y, inter alia is C1-C18alkylene; X is halogen; D is for example -0-, —S— or —NR6—; D, inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要翻译： 式（I）或（II）的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 卤代烷酰基，卤代苯甲酰基， R 2是卤素或C 1 -C 10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1是例如亚苯基，亚萘基，二亚苯基，亚杂芳基，氧联二苯基，亚苯基D-D 1-D-亚苯基或-Ar' -A 1 -Y 1-A 1 -Ar'1 - ; - - - - 其中这些基团任选被取代; Ae'是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部任意取代; A，是直接键合的，-O - ， - S-或-NR 6 - 。 Y尤其是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - 。 D，尤其是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特别适合作为光潜酸。
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公开(公告)号：US07026094B2
公开(公告)日：2006-04-11
申请号：US10478963
申请日：2002-05-23
申请人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Masaki Ohwa , Peter Murer
发明人： Akira Matsumoto , Hitoshi Yamato , Toshikage Asakura , Masaki Ohwa , Peter Murer
CPC分类号： G03F7/0045 , B33Y70/00 , C07C309/00 , C07D333/36 , G03F7/0007 , G03F7/001 , G03F7/0382 , G03F7/0392 , Y10S430/114 , Y10S430/117 , Y10S430/12 , Y10S430/122
摘要： New oxime sulfonate compounds of the formula (I) and (II), wherein R1 is C1-C12alkyl, C1C4haloalkyl, hydrogon, OR9, NR10R11, SR12 or is phenyl which is unsubstituted or substituted by OH, C1-C18alkyl, halogen and/or C1-C12alkoxy; R2, R3, R4 and R5 are for example hydrogen or C1-C12alkyl; R6 is for example is C1-C18alkylsulfonyl, phenyl-C1-C3alkylsulfonyl or phenylsulfonyl; R′6 is for example phenylenedisulfonyl or diphenylenedisulfonyl; R7, R8 and R9 for example are hydrogen or C1-C6alkyl; R10 and R11, are for example hydrogen or C1-C18alkyl; R12 is for example hydrogen, phenyl or C1-C18alkyl; A is S, O, NR13, or a group of formula A1, A2 or A3, R21 and R22 independently of one other have one of the meanings given for R7; R23, R24, R25 and R26 independently of one another are for example hydrogen, C1-C4alkyl, halogen or phenyl; Z is CR22 or N; and Z1 is CR22 or N; and Z1 is CR22 or N; and Z1 is CH2, S, O or NR13 are particularly suitable as photo-latent acids in resist applications.
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公开(公告)号：US06512020B1
公开(公告)日：2003-01-28
申请号：US09820115
申请日：2001-03-28
申请人： Toshikage Asakura , Hitoshi Yamato , Masaki Ohwa , Jean-Luc Birbaum , Kurt Dietliker , Junichi Tanabe
发明人： Toshikage Asakura , Hitoshi Yamato , Masaki Ohwa , Jean-Luc Birbaum , Kurt Dietliker , Junichi Tanabe
IPC分类号： C08J328
CPC分类号： G03F7/0045 , B33Y70/00 , C07C251/62 , C07C309/00 , C07C309/65 , C07C317/32 , C07C323/47 , C07C381/00 , C07C2602/42 , C07D319/18 , C07D333/22
摘要： Compounds of formula I, II and III, wherein wherein R1 is for example hydrogen, C1-C12alkyl, C3-C30cycloalkyl, C2-C12alkenyl, C4-C8cycloalkenyl, phenyl, which is unsubstituted or substituted, naphthyl, anthracyl or phenanthryl, unsubstituted or substituted, heteroaryl radical which is unsubstituted or substituted; wherein all radicals R1 with the exception of hydrogen can additionally be substituted by a group having a —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; R′1 is for example phenylene, naphthylene, diphenylene or oxydiphenylene, wherein these radicals are unsubstituted or substituted; R2 is halogen or C1-C10haloalkyl; R3 is for example C1-C18alkylsulfonyl, phenylsulfonyl, naphthylsulfonyl, anthracylsulfonyl or phenanthrylsulfonyl, wherein the groups are unsubstituted or substituted, or R3 is e.g. C2-C6haloalkanoyl, or halobenzoyl, R′3 is for example phenylenedisulfonyl, naphthylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl, wherein these radicals are unsubstituted or substituted, X is halogen; are especially suitable as photosensitive acid-donors in chemically amplified resist formulations.
摘要翻译： 式I，II和III的化合物，其中R1是例如氢，C1-C12烷基，C3-C30环烷基，C2-C12链烯基，C4-C8环烯基，苯基，未取代或取代的萘基，蒽基或菲基，未取代或取代的， 未取代或取代的杂芳基; 其中除氢之外的所有基团R1可以另外被具有在酸作用下切割的-O-C键或-O-Si键的基团取代; R'1是例如亚苯基，亚萘基，亚二苯基或氧联二苯基，其中这些基团是未取代的或被取代的; R2是卤素或C1-C10卤代烷基; R3是例如C1-C18烷基磺酰基，苯基磺酰基，萘基磺酰基，蒽磺酰基或菲基磺酰基，其中基团是未取代的或被取代的，或者R3是例如。 C 2 -C 6卤代烷酰基或卤代苯甲酰基，R'3是例如亚苯基二磺酰基，萘基二磺酰基，二苯基二磺酰基或氧基二苯基二磺酰基，其中这些基团是未取代的或被取代的，X是卤素; 在化学放大抗蚀剂配方中特别适合用作光敏酸供体。
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公开(公告)号：US06485886B1
公开(公告)日：2002-11-26
申请号：US09830248
申请日：2001-04-24
IPC分类号： G03C173
CPC分类号： C07C255/64 , B33Y70/00 , C07D333/36 , Y10S430/114 , Y10S430/117 , Y10S430/12
摘要： New oxime derivatives of formula (I) or. (II), wherein m is 0 or 1; R1 inter alia is phenyl, naphthyl, anthracyl, phenanthryl or a heteroaryl radical; R′1 is for example C2-C12alkylene, phenylene, naphthylene; R2 is CN; R3 is C2-C6haloalkanoyl, halobenzoyl, a phosphoryl or an organosilyl group; R4, R5, R10 and R11 inter alia are hydrogen, C1-C6alkyl, C1-C6alkoxy; R6 inter alia is hydrogen phenyl, C1-C12alkyl; R7 and R8 inter alia are hydrogen, C1-C12alkyl; or R7 and R8, together with the nitrogen atom to which they are bonded, form a 5-, 6 or 7-membered ring; R9 is for example C1-C12alkyl; and A inter alia is S, O, NR7a; are useful as latent acids, especially in photoresist applications.
摘要翻译： 式（I）的新肟衍生物或。 （II），其中m为0或1; R1特别是苯基，萘基，蒽基，菲基或杂芳基; R'1例如为C 2 -C 12亚烷基，亚苯基，亚萘基; R2为CN; R3是C2-C6卤代烷酰基，卤代苯甲酰基，磷酰基或有机甲硅烷基; R4，R5，R10和R11尤其是氢，C1-C6烷基，C1-C6烷氧基; R6尤其是氢苯基，C1-C12烷基; R 7和R 8尤其是氢，C 1 -C 12烷基; 或R 7和R 8与它们所键合的氮原子一起形成5-，6-或7-元环; R 9为例如C 1 -C 12烷基; A特别是S，O，NR7a; 可用作潜酸，特别是在光致抗蚀剂中。
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公开(公告)号：US08652752B2
公开(公告)日：2014-02-18
申请号：US12681785
申请日：2008-09-22
申请人： Pascal Hayoz , Hitoshi Yamato , Toshikage Asakura
发明人： Pascal Hayoz , Hitoshi Yamato , Toshikage Asakura
IPC分类号： G03F7/00 , G03F7/004 , G03F7/029 , C07D333/00 , C07D495/00
CPC分类号： C07D307/83 , B33Y70/00 , C07D307/82 , C07D333/22 , C07D333/32 , C07D333/34 , C07D333/64
摘要： Compounds of the Formula (I), wherein L1, L′1, L″1, L2, L′2, L″2, L3, L′3, L″3, L4, L′4 and L″4 for example are hydrogen or COT; R, R′ and R″ for example are hydrogen, C6-C12aryl or C3-C20heteroaryl; X, X′ and X″ for example are O, S, single bond, NRa or NCORa, T is for example hydrogen, C1-C20alkyl, C3-C12cycloalkyl, C2-C20alkenyl, C5-C12cycloalkenyl, C7-C18cycloalkylenaryl, C5-C18cycloalkylenheteroaryl, C6-C14aryl, providedthat at least one of R, R′ or R″ is unsubstituted or substituted C3-C20heteroaryl; and Y is an inorganic or organic anion; are suitable as photolatent acid generators.
摘要翻译： 式（I）的化合物，其中L 1，L 1，L'1，L 2，L 2，L'2，L3，L'3，L'3， '4例如是氢或COT; R，R'和R“例如是氢，C 6 -C 12芳基或C 3 -C 20杂芳基; 例如，X，X'和X“是O，S，单键，NR a或NCOR a，T是例如氢，C 1 -C 20烷基，C 3 -C 12环烷基，C 2 -C 20链烯基，C 5 -C 12环烯基，C 7 -C 18环烷基芳基， C 18 -C 14芳基，其中R，R'或R“中的至少一个是未取代的或取代的C 3 -C 20杂芳基; Y为无机或有机阴离子; 适合作为光潜酸产生剂。
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公开(公告)号：US08241822B2
公开(公告)日：2012-08-14
申请号：US12154333
申请日：2008-05-22
IPC分类号： C07C317/12 , G03F7/004
CPC分类号： C07C251/48 , B33Y70/00 , C07C381/00 , C07C2603/18 , C07C2603/20 , C07C2603/40 , C07D209/86 , C07D307/91 , C07D333/76 , G03F7/0007 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0392
摘要： Compounds of the formula I or II wherein R1 is C1-C10haloalkylsulfonyl, halobenzenesulfonyl, C2-C10haloalkanoyl, halobenzoyl; R2 is halogen or C1-C10haloalkyl; Ar1 is phenyl, biphenylyl, fluorenyl, naphthyl, anthracyl, phenanthryl, or heteroaryl, all of which are optionally substituted; Ar′1 is for example phenylene, naphthylene, diphenylene, heteroarylene, oxydiphenylene, phenylene-D-D1-D-phenylene or —Ar″1-A1-Y1-A1-Ar″1—; wherein these radicals optionally are substituted; Ar″1 is phenylene, naphthylene, anthracylene, phenanthrylene, or heteroarylene, all optionally substituted; A1 is for example a direct bond, —O—, —S—, or —NR6—; Y1 inter alia is C1-C18alkylene; X is halogen; D is for example —O—, —S— or —NR6—; D1 inter alia is C1-C18alkylene; are particularly suitable as photolatent acids in ArF resist technology.
摘要翻译： 式I或II的化合物，其中R 1是C 1 -C 10卤代烷基磺酰基，卤代苯磺酰基，C 2 -C 10卤代烷酰基，卤代苯甲酰基; R2是卤素或C1-C10卤代烷基; Ar1是苯基，联苯基，芴基，萘基，蒽基，菲基或杂芳基，它们都是任选被取代的; Ar'1例如为亚苯基，亚萘基，亚二苯基，亚杂芳基，氧联二苯基，亚苯基-D-D1-D-亚苯基或-Ar“1-A1-Y1-A1-Ar” 其中这些基团任选被取代; Ar 1是亚苯基，亚萘基，亚蒽基，亚菲基或亚杂芳基，全部被取代; A1是例如直接键，-O - ， - S - 或-NR 6 - ; Y1特别是C 1 -C 18亚烷基; X是卤素; D是例如-O - ， - S-或-NR 6 - ; D1特别是C 1 -C 18亚烷基; 在ArF抗蚀剂技术中特别适合作为光潜酸。
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公开(公告)号：US20100297540A1
公开(公告)日：2010-11-25
申请号：US12681785
申请日：2008-09-22
申请人： Pascal Hayoz , Hitoshi Yamato , Toshikage Asakura
发明人： Pascal Hayoz , Hitoshi Yamato , Toshikage Asakura
IPC分类号： G03F1/00 , C07D409/14 , C07D407/14 , G03F7/004 , G03F7/20
CPC分类号： C07D307/83 , B33Y70/00 , C07D307/82 , C07D333/22 , C07D333/32 , C07D333/34 , C07D333/64
摘要： Compounds of the Formula (I), wherein L1, L′1, L″1, L2, L′2, L″2, L3, L′3, L″3, L4, L′4 and L″4 for example are hydrogen or COT; R, R′ and R″ for example are hydrogen, C6-C12aryl or C3-C20heteroaryl; X, X′ and X″ for example are O, S, single bond, NRa or NCORa, T is for example hydrogen, C1-C20alkyl, C3-C12cycloalkyl, C2-C20alkenyl, C5-C12cycloalkenyl, C7-C18cycloalkylenaryl, C5-C18cycloalkylenheteroaryl, C6-C14aryl, providedthat at least one of R, R′ or R″ is unsubstituted or substituted C3-C20heteroaryl; and Y is an inorganic or organic anion; are suitable as photolatent acid generators.
摘要翻译： 例如式（I）的化合物，其中L1，L 1，L“1，L2，L'2，L”2，L3，L'3，L“3，L4，L'4和L”4 是氢或COT; R，R'和R“例如是氢，C 6 -C 12芳基或C 3 -C 20杂芳基; X，X'和X“例如是O，S，单键，NR a或NCOR a，T是例如氢，C 1 -C 20烷基，C 3 -C 12环烷基，C 2 -C 20烯基，C 5 -C 12环烯基，C 7 -C 18环烷基芳基，C 5 -C 18环烷基杂芳基 C 6 -C 14芳基，条件是R，R'或R“中的至少一个为未取代或取代的C 3 -C 20杂芳基; Y为无机或有机阴离子; 适合作为光潜酸产生剂。
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公开(公告)号：US07244544B2
公开(公告)日：2007-07-17
申请号：US11262104
申请日：2005-10-27
IPC分类号： G03F7/031 , C07C249/00
CPC分类号： G03F7/0392 , B33Y70/00 , G03F7/0045 , G03F7/0382
摘要： New oxime sulfonate compounds of the formula I, II, III, IV, V, VI and VII R1 is for example C1–C18alkylsulfonyl, R2 is halogen or C1–C10haloalkyl; R3 is for example unsubstitude or substituted phenylenedisulfonyl, diphenylenedisulfonyl, or oxydiphenylenedisulfonyl; Ar1 is for example a direct bond, C1–C12alkylene; —O—C-bond or a —O—Si-bond which cleaves upon the action of an acid; A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11 and A12 are for example a direct bond, —O—, or —S—, or are C1–C12alkylene or phenylene unsubstituted or substituted; Y1 is C1–C12alkylene which is for example substituted by OR4, or SR7; Y2 is e.g. a trivalent radical of C1–C12alkylene; Y3 is e.g. a tetravalent radical of C1–C12alkylene; X is halogen; Ar′1 is for example C1–C12alkyl which is unsubstituted or substituted; Ar″1 is for example phenylene; provided that at least one of the radicals Ar′1, Ar″1, is substituted by 1 to 3 groups of example halogen; R15, R16, R17 and R18 e.g. hydrogen or phenyl; R19, R20, R21, R22 R23 are e.g. phenyl; are especially suitable for the preparation of photoresists.
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