公开(公告)号：US20050151208A1

公开(公告)日：2005-07-14

申请号：US11022814

申请日：2004-12-28

Applicant: Takashi Uno ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Tsuyoshi Tanaka

Inventor： Takashi Uno ,  Manabu Yanagihara ,  Hidetoshi Ishida ,  Tsuyoshi Tanaka

IPC: H01L27/095 ,  H01L27/12 ,  H01L29/812 ,  H01L21/336 ,  H01L29/94

CPC classification number: H01L27/1203 ,  H01L29/8126

Abstract: In the semiconductor switch of the present invention, the gate electrode, source electrode and drain electrode are formed such that the distance between the gate and the drain of an MESFET, assuming a shunt FET, is longer than the distance between the gate and the drain of an MESFET, assuming a through FET, so that the gate breakdown voltage of the MESFET, assuming a shunt FET, is increased without changing the gate breakdown voltage of the MESFET, assuming a through FET.

Abstract translation: 在本发明的半导体开关中，栅电极，源电极和漏极形成为使得MESFET的栅极和漏极之间的距离（假设分流FET）比栅极和漏极之间的距离长 假定通过FET，MESFET的假定为通过FET的MESFET的栅极击穿电压在不改变MESFET的栅极击穿电压的情况下增加，并且假定为通过FET，所以增加了MESFET的栅极击穿电压。

公开(公告)号：US06429471B1

公开(公告)日：2002-08-06

申请号：US09578712

申请日：2000-05-26

Applicant: Takahiro Yokoyama ,  Hidetoshi Ishida ,  Yorito Ota ,  Daisuke Ueda

Inventor： Takahiro Yokoyama ,  Hidetoshi Ishida ,  Yorito Ota ,  Daisuke Ueda

IPC: H01L2976

CPC classification number: H01L29/66871 ,  H01L21/28575 ,  H01L29/0891 ,  H01L29/1087 ,  H01L29/812

Abstract: Disclosed is a compound semiconductor field effect transistor. The compound semiconductor field effect transistor has a charge absorption layer and a semiconductor laminated structure. The charge absorption layer includes a compound semiconductor layer of a first conductive type formed in a part of a compound semiconductor substrate having a semi-insulating layer. The semiconductor laminated structure includes at least an active layer including a compound semiconductor layer of a second conductive type epitaxially grown so as to cover the charge absorption layer and a region of the semi-insulating surface where the charge absorption layer is not formed. A source electrode is formed on the semiconductor laminated structure, being electrically connected to the charge absorption layer.

Abstract translation: 公开了一种化合物半导体场效应晶体管。 化合物半导体场效应晶体管具有电荷吸收层和半导体叠层结构。 电荷吸收层包括形成在具有半绝缘层的化合物半导体衬底的一部分中的第一导电类型的化合物半导体层。 半导体层叠结构至少包括包含外延生长以覆盖电荷吸收层的第二导电类型的化合物半导体层和不形成电荷吸收层的半绝缘表面的区域的有源层。 源电极形成在半导体层叠结构上，与电荷吸收层电连接。

公开(公告)号：US06219535B1

公开(公告)日：2001-04-17

申请号：US09092438

申请日：1998-06-05

Applicant: Hidetoshi Ishida ,  Daisuke Ueda

Inventor： Hidetoshi Ishida ,  Daisuke Ueda

IPC: H04B128

CPC classification number: H03D7/125

Abstract: A semiconductor circuit includes at least first and second field effect transistors. A source electrode of the first field effect transistor is connected to a drain electrode of the second field effect transistor via a first AC current blocking element and is also grounded via a bypass capacitor. A drain electrode of the first field effect transistor is connected to a power supply. A source-drain voltage of the first field effect transistor is equal to or higher than a pinch-off voltage of the first field effect transistor. A source-drain voltage of the second field effect transistor is equal to or higher than a pinch-off voltage of the second field effect transistor.

Abstract translation: 半导体电路至少包括第一和第二场效应晶体管。 第一场效应晶体管的源电极经由第一交流电流阻断元件连接到第二场效应晶体管的漏电极，并且还经由旁路电容器接地。 第一场效应晶体管的漏电极连接到电源。 第一场效应晶体管的源极 - 漏极电压等于或高于第一场效应晶体管的截止电压。 第二场效应晶体管的源极 - 漏极电压等于或高于第二场效应晶体管的截止电压。

公开(公告)号：US5815621A

公开(公告)日：1998-09-29

申请号：US802173

申请日：1997-02-18

Applicant: Kazuaki Sakai ,  Hidetoshi Ishida ,  Toshiaki Kakii

Inventor： Kazuaki Sakai ,  Hidetoshi Ishida ,  Toshiaki Kakii

IPC: B24B19/22 ,  B24B41/06 ,  G02B6/38 ,  G02B6/36 ,  B24D11/00

CPC classification number: G02B6/3834 ,  B24B19/226 ,  B24B41/06 ,  G02B6/3865 ,  G02B6/3885

Abstract: An optical connector ferrule of this invention includes a holding portion arranged at a position along an inserting direction of optical fibers to constitute a front surface of the ferrule and having a plurality of first through holes for inserting the optical fibers therethrough and two second through holes for inserting guide pins, the holding portion holding portions of the optical fibers near distal ends thereof, the second through holes and the first through holes having central axes that are substantially parallel to each other, and the first through holes being arrayed in two rows in a direction connecting centers of the second through holes; and an optical fiber tape accommodating portion having an insertion opening for inserting therethrough optical fiber tapes having the optical fibers held by the holding portion, an internal space for partially accommodating the optical fiber tapes, and an injection opening for injecting therethrough an adhesive for adhering and fixing the inserted optical fiber tapes and the ferrule with each other. The optical connector ferrule is formed integrally by resin molding. When optical fiber tapes are inserted in this ferrule to be stacked in two layers and the ferrule and the optical fiber tapes are adhered and fixed to each other.

Abstract translation: 本发明的光连接器套圈包括一个保持部分，该保持部分布置在沿着光纤插入方向的位置处，以构成套圈的前表面，并具有多个用于插入光纤的第一通孔和两个第二通孔，用于 插入引导销，光纤的保持部分保持部分靠近其末端，第二通孔和第一通孔具有基本上彼此平行的中心轴，并且第一通孔排列成两排， 第二通孔的方向连接中心; 以及具有用于插入光纤带的插入口的光纤带容纳部分，所述光纤带具有由保持部分保持的光纤，用于部分容纳光纤带的内部空间，以及用于通过其注入用于粘附的粘合剂的注射开口， 将插入的光纤带和套圈彼此固定。 光连接器套圈通过树脂成型一体地形成。 当将光纤带插入该套圈中以层叠成两层并且套圈和光纤带彼此粘接和固定时。

公开(公告)号：US5719978A

公开(公告)日：1998-02-17

申请号：US499902

申请日：1995-07-11

Applicant: Toshiaki Kakii ,  Hidetoshi Ishida ,  Shinji Ogawa ,  Kazumichi Miyabe

Inventor： Toshiaki Kakii ,  Hidetoshi Ishida ,  Shinji Ogawa ,  Kazumichi Miyabe

IPC: G02B6/26 ,  G02B6/30 ,  G02B6/32 ,  G02B6/38 ,  G02B6/42 ,  G02B6/36

CPC classification number: G02B6/3861 ,  G02B6/262 ,  G02B6/30 ,  G02B6/3839 ,  G02B6/3855 ,  G02B6/3885 ,  G02B6/3897 ,  G02B6/4203 ,  G02B6/4207 ,  G02B6/4246 ,  G02B6/4248 ,  G02B6/4249 ,  G02B6/4292 ,  G02B2006/4297 ,  G02B6/32 ,  G02B6/3849 ,  G02B6/3854 ,  G02B6/3863 ,  G02B6/3867 ,  G02B6/3893 ,  G02B6/4204 ,  G02B6/421

Abstract: An optical fiber array according to the present invention includes an optical coupling end face to be optically coupled to another optical line, and first ends of a plurality of optical fibers are arrayed in the optical coupling end face. The optical fiber array includes a lower plate (3a) having a plurality of V-shaped grooves (4) for positioning the optical fibers exposed from one end of a ribbon part of the optical fibers, and an upper plate (3b) for pressing each optical fiber provided in each V-shaped groove (4) of the lower plate into the positioning groove. A boundary portion between the ribbon part (7) and the optical fibers (1) is fixed between the first and second plates (3a, 3b) by heat resistant adhesive (10), and the optical fibers from the boundary portion to a front end of the array are fixed by solder (6) to achieve hermetic sealing.

Abstract translation: 根据本发明的光纤阵列包括光耦合到另一光线的光耦合端面，多个光纤的第一端排列在光耦合端面中。 光纤阵列包括具有多个V形槽（4）的下板（3a），用于定位从光纤的带状部分的一端露出的光纤;以及上板（3b），用于将每个 设置在下板的每个V形槽（4）中的光纤进入定位槽。 带状部分（7）和光纤（1）之间的边界部分通过耐热粘合剂（10）固定在第一和第二板（3a，3b）之间，并且光纤从边界部分到前端 的阵列通过焊料（6）固定以实现气密密封。

公开(公告)号：US5548677A

公开(公告)日：1996-08-20

申请号：US500688

申请日：1995-07-11

Applicant: Toshiaki Kakii ,  Hidetoshi Ishida ,  Shinji Ogawa ,  Kazumichi Miyabe

Inventor： Toshiaki Kakii ,  Hidetoshi Ishida ,  Shinji Ogawa ,  Kazumichi Miyabe

IPC: G02B6/26 ,  G02B6/30 ,  G02B6/32 ,  G02B6/38 ,  G02B6/42 ,  G02B6/36

CPC classification number: G02B6/3861 ,  G02B6/262 ,  G02B6/30 ,  G02B6/3839 ,  G02B6/3855 ,  G02B6/3885 ,  G02B6/3897 ,  G02B6/4203 ,  G02B6/4207 ,  G02B6/4246 ,  G02B6/4248 ,  G02B6/4249 ,  G02B6/4292 ,  G02B2006/4297 ,  G02B6/32 ,  G02B6/3849 ,  G02B6/3854 ,  G02B6/3863 ,  G02B6/3867 ,  G02B6/3893 ,  G02B6/4204 ,  G02B6/421

Abstract: A housing structure for coupling and releasing optical modules comprises three housing. A first housing including a distal wall at one end, an opening at the other end, and the opening having a first protrusion part protruding toward inside of the opening. A second housing for receiving and holding an optical module provided in the first housing so as to be slidable. The second housing includes a second protrusion part for engaging with the first protrusion part and the sliding of the second housing being limited by the distal wall of the first housing and the first protrusion part. A third housing for holding an another optical module including holding parts for selectively holding the second housing and a contact part provided at one end of the third housing for touching the second housing. The second housing also includes engaging means for engaging the holding parts of the third housing. In case of coupling the optical modules, the third housing is pushed into the first and second housings, whereby the second housing is pressed by the contact part of the third housing and the second protrusion part of the second housing is displaced across the first protrusion part. In case of releasing the coupling of the optical modules, the third housing is separated from the first and second housings and the second protrusion part of the second housing returns to an initial position thereof over the first protrusion part of the first housing.

Abstract translation: 用于联接和释放光学模块的壳体结构包括三个壳体。 第一壳体，其一端具有远端壁，另一端具有开口部，该开口部具有朝向开口内侧突出的第一突出部。 第二壳体，用于容纳和保持设置在第一壳体中以便可滑动的光学模块。 第二壳体包括用于与第一突出部分接合的第二突起部分和由第一壳体的远侧壁和第一突出部分限制的第二壳体的滑动。 用于保持另一个光学模块的第三壳体包括用于选择性地保持第二壳体的保持部分和设置在第三壳体的一端以接触第二壳体的接触部分。 第二壳体还包括用于接合第三壳体的保持部分的接合装置。 在联接光学模块的情况下，第三壳体被推入第一和第二壳体中，由此第二壳体被第三壳体的接触部分按压，并且第二壳体的第二突出部分跨越第一突出部分 。 在释放光学模块的耦合的情况下，第三壳体与第一壳体和第二壳体分离，并且第二壳体的第二突出部分在第一壳体的第一突出部分上返回到其初始位置。

公开(公告)号：US08905650B2

公开(公告)日：2014-12-09

申请号：US13704161

申请日：2011-09-05

Applicant: Hidetoshi Ishida ,  Hiroyoshi Maesoba ,  Tetsuji Tanaka

Inventor： Hidetoshi Ishida ,  Hiroyoshi Maesoba ,  Tetsuji Tanaka

IPC: G02B6/36 ,  G02B6/44 ,  G02B6/38

CPC classification number: G02B6/443 ,  G02B6/3887 ,  G02B6/3889

Abstract: A fiber-optic cable with a fitting capable of increasing connection strength between a fiber-optic cable and an optical connector, which includes a fiber-optic cable including a sheath and a tensile member, an inner ring mounted on a circumference of the sheath from a position where the tensile member is drawn out of the sheath through a slit to a front end of the sheath, and a fitting mounted on the circumference and including a first portion mounted from the position where the tensile member is drawn out of the sheath to a position of the sheath on a side opposite to the ring side, and a second portion mounted while covering a circumference of the ring, wherein the first portion connects with the sheath, and the end portion of the tensile member is sandwiched by the ring and the second portion.

Abstract translation: 一种具有能够增加光纤电缆和光学连接器之间的连接强度的配件的光纤电缆，其包括包括护套和拉伸构件的光纤电缆，安装在护套的圆周上的内环 其中所述拉伸构件通过狭缝从所述鞘被拉出到所述护套的前端的位置，以及安装在所述圆周上的配件，并且包括从所述拉伸构件从所述护套拉出的位置安装的第一部分， 所述护套位于与所述环侧相反的一侧的位置，以及第二部分，其安装成覆盖所述环的周边，其中所述第一部分与所述护套连接，并且所述拉伸构件的端部被所述环夹持， 第二部分。

公开(公告)号：US08748941B2

公开(公告)日：2014-06-10

申请号：US13372065

申请日：2012-02-13

Applicant: Daisuke Shibata ,  Masahiro Hikita ,  Hidetoshi Ishida ,  Tetsuzo Ueda

Inventor： Daisuke Shibata ,  Masahiro Hikita ,  Hidetoshi Ishida ,  Tetsuzo Ueda

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/423 ,  H01L29/872 ,  H01L29/778 ,  H01L29/417 ,  H01L29/06

CPC classification number: H01L29/7786 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/872

Abstract: A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor multilayer; and a passivation film covering a top of the semiconductor multilayer. The semiconductor multilayer 102 includes a first nitride semiconductor layer, a second nitride semiconductor layer, and a p-type third nitride semiconductor layer 124 sequentially formed on the substrate. The third nitride semiconductor layer contains p-type impurities, and is selectively formed between the first ohmic electrode and the Schottky electrode in contact with the Schottky electrode.

Abstract translation: 氮化物半导体器件包括形成在衬底上的半导体层，在半导体多层上彼此间隔开的第一欧姆电极和肖特基电极; 以及覆盖半导体多层的顶部的钝化膜。 半导体层叠体102包括顺序形成在基板上的第一氮化物半导体层，第二氮化物半导体层和p型第三氮化物半导体层124。 第三氮化物半导体层含有p型杂质，并且选择性地形成在与肖特基电极接触的第一欧姆电极和肖特基电极之间。

公开(公告)号：US08404513B2

公开(公告)日：2013-03-26

申请号：US13486843

申请日：2012-06-01

Applicant: Akio Matsushita ,  Akihiro Itoh ,  Tohru Nakagawa ,  Hidetoshi Ishida

Inventor： Akio Matsushita ,  Akihiro Itoh ,  Tohru Nakagawa ,  Hidetoshi Ishida

IPC: H01L21/00 ,  H01L29/15 ,  H01L31/0256 ,  H01L27/14 ,  H01L21/0203 ,  H01L31/06 ,  H01L31/00

CPC classification number: H01L31/0693 ,  H01L31/0543 ,  H01L31/0687 ,  Y02E10/52 ,  Y02E10/544

Abstract: A method for generating electric power including the steps of: (a) preparing a solar cell having a condensing lens and a solar cell element, wherein the solar cell element includes an n-type GaAs layer, a p-type GaAs layer, a quantum tunneling layer, an n-type InGaP layer, a p-type InGaP layer, a p-type window layer, an n-side electrode, and a p-side electrode, and satisfies the following equation (I): d2

Abstract translation: 一种发电方法，包括以下步骤：（a）制备具有聚光透镜和太阳能电池元件的太阳能电池，其中太阳能电池元件包括n型GaAs层，p型GaAs层，量子 隧道层，n型InGaP层，p型InGaP层，p型窗口层，n侧电极和p侧电极，满足下式（I）：d2

公开(公告)号：US20120146093A1

公开(公告)日：2012-06-14

申请号：US13372065

申请日：2012-02-13

Applicant: Daisuke SHIBATA ,  Masahiro Hikita ,  Hidetoshi Ishida ,  Tetsuzo Ueda

Inventor： Daisuke SHIBATA ,  Masahiro Hikita ,  Hidetoshi Ishida ,  Tetsuzo Ueda

IPC: H01L29/78

CPC classification number: H01L29/7786 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316 ,  H01L29/7787 ,  H01L29/872

Abstract: A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor multilayer; and a passivation film covering a top of the semiconductor multilayer. The semiconductor multilayer 102 includes a first nitride semiconductor layer, a second nitride semiconductor layer, and a p-type third nitride semiconductor layer 124 sequentially formed on the substrate. The third nitride semiconductor layer contains p-type impurities, and is selectively formed between the first ohmic electrode and the Schottky electrode in contact with the Schottky electrode.

Abstract translation: 氮化物半导体器件包括形成在衬底上的半导体层，在半导体多层上彼此间隔开的第一欧姆电极和肖特基电极; 以及覆盖半导体多层的顶部的钝化膜。 半导体层叠体102包括顺序形成在基板上的第一氮化物半导体层，第二氮化物半导体层和p型第三氮化物半导体层124。 第三氮化物半导体层含有p型杂质，并且选择性地形成在与肖特基电极接触的第一欧姆电极和肖特基电极之间。