公开(公告)号：US20190312412A1

公开(公告)日：2019-10-10

申请号：US16434789

申请日：2019-06-07

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshiro NOMOTO

IPC: H01S5/183 ,  H01S5/026 ,  H01S5/028 ,  H01S5/042 ,  H01S5/06 ,  H01S5/343 ,  H01S5/42

Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

公开(公告)号：US20190312410A1

公开(公告)日：2019-10-10

申请号：US16432198

申请日：2019-06-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Yoshiro NOMOTO ,  Soh UENOYAMA

IPC: H01S5/18 ,  H01S5/42 ,  H01S5/062

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

公开(公告)号：US20190252856A1

公开(公告)日：2019-08-15

申请号：US16292531

申请日：2019-03-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshiro NOMOTO

IPC: H01S5/183 ,  H01S5/028 ,  H01S5/42

Abstract: The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.

公开(公告)号：US20170222399A1

公开(公告)日：2017-08-03

申请号：US15120149

申请日：2015-02-13

Applicant: Kyoto University ,  HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi HIROSE ,  Akiyoshi WATANABE ,  Yoshitaka KUROSAKA ,  Takahiro SUGIYAMA ,  Susumu NODA

IPC: H01S5/10 ,  H01S5/022 ,  H01S5/343 ,  H01S5/042

CPC classification number: H01S5/105 ,  H01L2224/48091 ,  H01S5/005 ,  H01S5/0078 ,  H01S5/02208 ,  H01S5/02276 ,  H01S5/02292 ,  H01S5/02296 ,  H01S5/042 ,  H01S5/0425 ,  H01S5/06216 ,  H01S5/0622 ,  H01S5/0653 ,  H01S5/18 ,  H01S5/34313 ,  H01S5/34353 ,  H01L2924/00014

Abstract: A control circuit in this laser equipment drives a drive circuit of a photonic crystal laser element under a predetermined condition. It was found that a wavelength width of a laser beam to be output from the photonic crystal laser element is dependent on a standardized drive current k and a pulse width T, and had a predetermined relationship with these. By meeting this condition, a laser beam with a plurality of wavelengths can be controlled and output.

公开(公告)号：US20250079792A1

公开(公告)日：2025-03-06

申请号：US18844129

申请日：2023-03-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kibo OTE ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Yuu TAKIGUCHI ,  Takahiro SUGIYAMA ,  Soh UENOYAMA

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/223

Abstract: A semiconductor light-emitting element includes a semiconductor stacked layer, an electrode, and an electrode. The semiconductor stacked layer includes an active layer and a phase modulation layer. The phase modulation layer includes a plurality of phase modulation areas. Each of the plurality of phase modulation areas includes a basic region which has a first refractive index and a plurality of different-refractive-index regions which have a second refractive index different from the first refractive index and which are distributed in a two-dimensional shape. The electrode includes a plurality of electrode parts overlapping the plurality of phase modulation areas when seen in a stacking direction of the semiconductor stacked layer. The plurality of electrode parts are electrically isolated from each other. Laser light oscillating in each of the plurality of phase modulation areas is applied to a common irradiation area as light images according to arrangement of the plurality of different-refractive-index regions.

公开(公告)号：US20230102430A1

公开(公告)日：2023-03-30

申请号：US17792181

申请日：2021-01-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Soh UENOYAMA

IPC: H01S5/11 ,  H01S5/042

Abstract: An embodiment relates to a light source module dynamically controlling a phase distribution of light. The light source module includes a semiconductor stack portion. The semiconductor stack portion includes a stacked body including an active layer and a photonic crystal layer causing Γ-point oscillation, and includes a phase synchronization portion and an intensity modulation portion which are arranged in a Y-direction as one resonance direction of the photonic crystal layer. The stacked body in the intensity modulation portion has M (≥2) pixels each arranged in an X-direction and including N1 (≥2) subpixels. A length of a region including consecutive N2 (≥2, ≤N1) subpixels among the N1 subpixels, defined in the X-direction, is smaller than an emission wavelength of the active layer. The light source module outputs laser light from each M pixel included in the intensity modulation portion in a direction intersecting both X- and Y-directions.

公开(公告)号：US20220278505A1

公开(公告)日：2022-09-01

申请号：US17749893

申请日：2022-05-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takahiro SUGIYAMA ,  Yuu TAKIGUCHI ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE ,  Yoshiro NOMOTO ,  Soh UENOYAMA

IPC: H01S5/11 ,  H01S5/042 ,  H01S5/42

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

公开(公告)号：US20220187636A1

公开(公告)日：2022-06-16

申请号：US17598465

申请日：2020-03-27

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Soh UENOYAMA ,  Yoshitaka KUROSAKA ,  Kazuyoshi HIROSE

IPC: G02F1/03

Abstract: The present embodiment relates to a variable-phase device including a new device structure that can solve various problems. The variable-phase device includes M pixels (where M is an integer of 2 or more) arrayed one-dimensionally or two-dimensionally, the M pixels each emitting light or modulating light. The array pitch of the M pixels is less than the wavelength of incident light and is constant along a predetermined direction. Each of the M pixels includes N sub-pixels (where N is an integer of 2 or more) each having a structure allowing the phase of outgoing light to vary. With respect to each of the M pixels, N partial light beams outputted from the N sub-pixels are combined into light having a single phase in the far field.

公开(公告)号：US20210240052A1

公开(公告)日：2021-08-05

申请号：US17053130

申请日：2019-05-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Soh UENOYAMA ,  Kazuyoshi HIROSE ,  Yoshitaka KUROSAKA ,  Hiroshi TANAKA

IPC: G02F1/29

Abstract: A reflective dynamic metasurface of an embodiment comprises a structure enabling phase modulation in each of pixels constituting at least a one-dimensional array. The metasurface includes: a laminated structure body having a transparent conductive layer and a dielectric layer; a first metal film on one surface of the laminated structure body; a second metal film on the other surface of the laminated structure body; and a drive circuit controlling voltage applied between the first and second metal films. The first and second metal films are arranged to sandwich the pixels. The first metal film is arranged to expose a pair of window regions in one pixel, and the second metal film includes partial metal films defining the shape of each pixel and separated from each other. The drive circuit individually controls the potential of each partial metal film, thereby modulating the phase of the input light for each pixel.

公开(公告)号：US20190013647A1

公开(公告)日：2019-01-10

申请号：US16027709

申请日：2018-07-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akira HIGUCHI ,  Yoshitaka KUROSAKA ,  Tadataka EDAMURA ,  Masahiro HITAKA

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/10

CPC classification number: H01S5/18394 ,  H01S5/0287 ,  H01S5/0425 ,  H01S5/1039 ,  H01S5/105 ,  H01S5/18308 ,  H01S5/18311 ,  H01S5/3432 ,  H01S5/34326 ,  H01S5/3436

Abstract: A semiconductor laser device of an embodiment comprises: a first electrode having an opening for passage of laser light and arranged on a main surface of a substrate; and a second electrode arranged on a back surface of the substrate. A stacked structural body including an active layer and a photonic crystal layer is arranged between the substrate and the first electrode, and a current confinement layer having an opening for passage of a current is arranged between the stacked structural body and the first electrode. A maximum width of the opening of the current confinement layer is smaller than a maximum width of the opening of the first electrode, and a whole region defined by the opening of the current confinement layer fits within a region defined by the opening of the first electrode as viewed from the first electrode side toward the second electrode side.