公开(公告)号：US10403677B2

公开(公告)日：2019-09-03

申请号：US15032130

申请日：2014-10-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shin-ichiro Takagi ,  Yasuhito Yoneta ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H04N5/369 ,  H04N5/372 ,  H01L27/148

Abstract: An optical detection unit AR is divided so as to have a plurality of pixel regions PX aligned in a column direction. Signals from the plurality of pixel regions PX are integrated for each optical detection unit AR, and output the signal as an electrical signal corresponding to a one-dimensional optical image in time series. Each of the pixel regions PX includes a resistive gate electrode R which promotes transfer of charges in the photoelectric conversion region and a charge accumulation region S2. A drain region ARD is adjacent to the charge accumulation region S2 through a channel region.

公开(公告)号：US10283551B2

公开(公告)日：2019-05-07

申请号：US15764492

申请日：2016-07-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Hirotaka Takahashi

IPC: H01L27/146 ,  H01L31/02 ,  H04N5/369

Abstract: A back-illuminated solid-state imaging element includes a semiconductor substrate which has a front surface and a back surface provided with a recess, and in which a thinned section, which is a bottom section of the recess, is an imaging area, a signal read-out circuit formed on the front surface of the semiconductor substrate, a boron layer formed on at least the back surface of the semiconductor substrate and a lateral surface of the recess, a metal layer formed on the boron layer, and provided with an opening opposing a bottom surface of the recess, and an anti-reflection layer formed on the bottom surface of the recess.

公开(公告)号：US10269842B2

公开(公告)日：2019-04-23

申请号：US15668776

申请日：2017-08-04

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chern ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

公开(公告)号：US09754995B2

公开(公告)日：2017-09-05

申请号：US14406851

申请日：2013-02-21

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuhito Yoneta ,  Ryoto Takisawa ,  Shingo Ishihara ,  Hisanori Suzuki ,  Masaharu Muramatsu

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/1469 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/148

Abstract: A method for manufacturing a solid-state imaging device comprises a first step of preparing an imaging element including a second principal surface having an electrode arranged thereon, and a photoelectric converter part configured to photoelectrically convert the incident energy line so as to generate a signal charge; a second step of preparing a support substrate, provided with at least one through hole extending in a thickness direction thereof, having a third principal surface; a third step of aligning the imaging element and the support substrate with each other so that the one electrode is exposed out of the one through hole while the second and third principal surfaces oppose each other and joining the imaging element and the support substrate to each other; and a fourth step of embedding a conductive member in the through hole after the third step.

公开(公告)号：US09748294B2

公开(公告)日：2017-08-29

申请号：US14591325

申请日：2015-01-07

Applicant: KLA-Tencor Corporation ,  Hamamatsu Photonics K.K.

Inventor： Masaharu Muramatsu ,  Hisanori Suzuki ,  Yasuhito Yoneta ,  Shinya Otsuka ,  Jehn-Huar Chem ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden ,  Venkatraman Iyer

IPC: H01L27/146

CPC classification number: H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.