Method for alignment of microwires
    22.
    发明授权
    Method for alignment of microwires 有权
    微丝对准方法

    公开(公告)号:US09553223B2

    公开(公告)日:2017-01-24

    申请号:US14163745

    申请日:2014-01-24

    CPC classification number: H01L31/0352 H01F41/26 Y10T29/4902

    Abstract: A method of aligning microwires includes modifying the microwires so they are more responsive to a magnetic field. The method also includes using a magnetic field so as to magnetically align the microwires. The method can further include capturing the microwires in a solid support structure that retains the longitudinal alignment of the microwires when the magnetic field is not applied to the microwires.

    Abstract translation: 对准微丝的方法包括修改微丝,使得它们对磁场更有反应。 该方法还包括使用磁场以使微线磁性对准。 该方法可以进一步包括当固体支撑结构中的微线捕获时,当未将磁场施加到微型线时,保持微线的纵向对准。

    Method of making photovoltaic devices incorporating improved pnictide semiconductor films
    24.
    发明授权
    Method of making photovoltaic devices incorporating improved pnictide semiconductor films 有权
    制造具有改进的pnictide半导体膜的光伏器件的方法

    公开(公告)号:US09287435B2

    公开(公告)日:2016-03-15

    申请号:US14373598

    申请日:2013-01-30

    Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.

    Abstract translation: 本发明使用涉及在pnictide半导体膜的表面上形成富含富含富含亚硝酸盐区域的蚀刻处理的处理。在许多实践模式中,该区域非常薄,通常在2至3nm厚的数量级 许多实施例。 以前的调查人员已经离开了该地区,而不理解其存在的事实和/或其存在(如果知道)可能会损害所得设备的电子性能。 本发明认识到,区域的形成和去除有利地使得pnictide膜表面在电子缺陷减少的情况下非常平滑。 表面准备好进一步的器件制造。

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