公开(公告)号：US10923508B2

公开(公告)日：2021-02-16

申请号：US16398488

申请日：2019-04-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Renquan Gu ,  Qi Yao ,  Wusheng Li ,  Dongsheng Li ,  Huili Wu ,  Shipei Li ,  Dongsheng Yin ,  Fang He ,  Yang Yue

IPC: H01L27/12 ,  H01L23/48 ,  H01L23/522 ,  H01L33/38 ,  H01L23/482 ,  H01L23/532

Abstract: The disclosure relates to an array substrate and a manufacturing method therefor, a display panel, and a display device. The array substrate comprises a base substrate, and a lead-out line and an inorganic insulating layer which are located on one side of the base substrate; the base substrate is provided with a plurality of connection vias penetrating the base substrate and filled with a first conductive material; the inorganic insulating layer is provided with a first via and a second via, the first via penetrating to the first conductive material, and the second via penetrating to the lead-out line; a second conductive layer is disposed on the side, away from the base substrate, of the first via, the second via and the inorganic insulating layer, such that the first conductive material and the lead-out line are electrically connected through the second conductive layer.

公开(公告)号：US10818732B2

公开(公告)日：2020-10-27

申请号：US16574055

申请日：2019-09-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shipei Li ,  Wusheng Li ,  Qi Yao ,  Dongsheng Li ,  Fang He ,  Huili Wu ,  Renquan Gu ,  Sheng Xu ,  Wei He ,  Dongsheng Yin ,  Ying Zhao

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/44 ,  H01L29/786

Abstract: A photosensitive sensor and a method of manufacturing the photosensitive sensor are disclosed. The photosensitive sensor includes a thin film transistor and a photosensitive element on a substrate, wherein the photosensitive element includes a first electrode, a second electrode, and a photosensitive layer between the first electrode and the second electrode. The second electrode is connected to a drain electrode of the thin film transistor. An orthographic projection of an active layer of the thin film transistor on the substrate is within an orthographic projection of the second electrode on the substrate. The second electrode includes at least two stacked conductive layers, at least one of the at least two stacked conductive layers being a light shielding metal layer.

公开(公告)号：US10714506B2

公开(公告)日：2020-07-14

申请号：US15921964

申请日：2018-03-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Dongsheng Li ,  Huili Wu ,  Jianming Sun ,  Shipei Li ,  Xiaolong He

IPC: H01L27/12 ,  G02F1/133 ,  G06F3/041 ,  H01L31/105 ,  G06K9/00 ,  H01L27/32

Abstract: A photodetector, a driving method thereof, a display panel and a display device are disclosed in the field of display technology. The photodetector includes photosensitive element, a voltage divider, a switch circuitry and a detection transistor. The photosensitive element and the voltage divider are connected in series between two power terminals. The gate of the detection transistor is connected to a first voltage dividing node between the photosensitive element and the voltage divider. Therefore, when the resistance of the photosensitive element becomes smaller under illumination, the voltage of the first voltage dividing node correspondingly rises, and the detection transistor is turned on and may output a current to a read line under the driving of a DC power terminal. The magnitude of the current is determined by the magnitude of the voltage of the first voltage dividing node. Since the current output by the detection transistor under the driving of the DC power terminal is large, the influence of the leakage current of the detection transistor on the output current may be negligible, thereby effectively improving the accuracy of fingerprint identification based on the output current.