公开(公告)号：US20220302234A1

公开(公告)日：2022-09-22

申请号：US17502052

申请日：2021-10-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Dapeng XUE ,  Shuilang DONG ,  Ke WANG ,  Zhanfeng CAO

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H01L25/075

Abstract: A display substrate is provided, which includes a base substrate and a plurality of sub-pixels disposed on the base substrate. At least one sub-pixel includes a light transmittance region and a display region. The display region includes a circuit structure layer and a light-emitting element which are disposed on a base substrate, and the light-emitting element is connected with the circuit structure layer. The display substrate further includes a plurality of insulating layers disposed on the base substrate, and at least one insulating layer is hollowed out in the light transmittance region.

公开(公告)号：US20220293018A1

公开(公告)日：2022-09-15

申请号：US17508866

申请日：2021-10-22

Applicant: BOE Technology Group Co., Ltd.

Inventor： Shuilang DONG ,  Xinhong LU ,  Jingshang ZHOU ,  Lei ZHAO ,  Zhanfeng CAO ,  Dapeng XUE ,  Lizhong WANG ,  Guangcai YUAN

IPC: G09F9/302 ,  H01L33/62 ,  G09F9/33

Abstract: The present application discloses an array substrate and a splicing screen. The array substrate provided by an embodiment of the present application includes: a flexible base, wherein the flexible base includes a display region, a first region and a second region, the display region and at least one of the first region and the second region are located in different planes, and the first region is located between the display region and the second region; a plurality of signal lines, arranged on the display region and the first region; a plurality of fan-out lines, arranged on the second region and connected with the plurality of signal lines in a one-to-one correspondence; and a buffer cushion, arranged on the first region, wherein an orthographic projection of the buffer cushion on the flexible base does not overlap with orthographic projections of the signal lines on the flexible base.

公开(公告)号：US20220131009A1

公开(公告)日：2022-04-28

申请号：US17356167

申请日：2021-06-23

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lizhong WANG ,  Tianmin ZHOU ,  Hehe HU ,  Xiaochun XU ,  Nianqi YAO ,  Dapeng XUE ,  Shuilang DONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: An oxide thin film transistor includes: a gate electrode, a metal oxide active layer and a source-drain metal layer, which are on a base substrate. The metal oxide active layer includes a first metal oxide layer and a second metal oxide layer stacked on the first metal oxide layer in a direction away from the base substrate; the first metal oxide layer is a carrier transport layer; the second metal oxide layer is a carrier isolation layer; an electron transfer rate of the carrier transport layer is greater than an electron transfer rate of the carrier isolation layer. The first metal oxide layer includes a primary surface facing toward the base substrate and a primary surface away from the base substrate; the first metal oxide layer further includes a lateral surface around the primary surfaces; the second metal oxide layer covers the lateral surface of the first metal oxide layer.

公开(公告)号：US20190237488A1

公开(公告)日：2019-08-01

申请号：US16330922

申请日：2018-05-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Haixu LI ,  Zhanfeng CAO ,  Qi YAO ,  Dapeng XUE ,  Da LU

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1218 ,  H01L29/6675 ,  H01L29/78633 ,  H01L29/78672

Abstract: The present disclosure provides a field of display technologies, and in particular, to a LTPS substrate and a fabricating method thereof, a thin film transistor thereof, an array substrate thereof, and a display device thereof. The LTPS substrate, able to be used for the fabrication of a thin film transistor, includes a light shielding layer, the light shielding layer mainly composed of amorphous silicon doped with a lanthanide element. The present disclosure mainly employs an amorphous silicon film layer doped with the lanthanide element as the light shielding layer of the LTPS substrate, which not only ensures the light shielding efficiency but also reduces the production process, and further prevents the occurrence of the H explosion problem due to H exuding during the ELA process.

公开(公告)号：US20190088788A1

公开(公告)日：2019-03-21

申请号：US16050294

申请日：2018-07-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shengguang BAN ,  Zhanfeng CAO ,  Qi YAO ,  Dapeng XUE

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/66 ,  H01L27/12

Abstract: The present application provides a thin film transistor and a method of fabricating the same, an array substrate and a display device. The thin film transistor includes: a gate electrode; an active layer including a first portion made of polysilicon and a second portion made of amorphous silicon; a source electrode and a drain electrode; and an ohmic contact layer. The second portion of the active layer is in contact with the source electrode and the drain electrode through the ohmic contact layer.