公开(公告)号：US20130312791A1

公开(公告)日：2013-11-28

申请号：US13479087

申请日：2012-05-23

申请人： John H. Zhang ,  Laertis Economikos ,  Wei-Tsu Tseng ,  Adam Ticknor

发明人： John H. Zhang ,  Laertis Economikos ,  Wei-Tsu Tseng ,  Adam Ticknor

IPC分类号： B08B3/14

CPC分类号： H01L21/67017 ,  B01D15/362 ,  B01D15/363 ,  B01D24/002 ,  B01D24/008 ,  B01D53/82 ,  B01D2201/287 ,  B01D2221/14 ,  B01D2253/206 ,  B01D2258/0216 ,  H01L21/6704 ,  H01L21/67051

摘要： The present disclosure is directed to fluid filtering systems and methods for use during semiconductor processing. One or more embodiments are directed to fluid filtering systems and methods for filtering ions and particles from a fluid as the fluid is being provided to a semiconductor wafer processing tool, such as to a semiconductor wafer cleaning tool.

摘要翻译： 本公开涉及在半导体处理期间使用的流体过滤系统和方法。 一个或多个实施例涉及当流体被提供到半导体晶片处理工具（例如半导体晶片清洁工具）时从流体中过滤离子和颗粒的流体过滤系统和方法。

公开(公告)号：US20130072011A1

公开(公告)日：2013-03-21

申请号：US13619616

申请日：2012-09-14

申请人： John H. Zhang ,  Laertis Economikos ,  Robin Van Den Nieuwenhuizen ,  Wei-Tsu Tseng

发明人： John H. Zhang ,  Laertis Economikos ,  Robin Van Den Nieuwenhuizen ,  Wei-Tsu Tseng

IPC分类号： H01L21/768

CPC分类号： H01L22/20 ,  H01L22/14 ,  H01L24/05 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00

摘要： A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced.

公开(公告)号：US20070190788A1

公开(公告)日：2007-08-16

申请号：US11276137

申请日：2006-02-15

申请人： Manoj Balachandran ,  James Hagan ,  Ben Kim ,  Deoram Persaud ,  Adam Ticknor ,  Wei-Tsu Tseng

发明人： Manoj Balachandran ,  James Hagan ,  Ben Kim ,  Deoram Persaud ,  Adam Ticknor ,  Wei-Tsu Tseng

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/311

CPC分类号： H01L21/02024 ,  B24B37/345

摘要： Reduction of a wafer removing force on a chemical mechanical planarization (CMP) tool that includes planarizing a wafer on a platen at a wafer/platen interface; applying carbonated water to the wafer/platen interface so as to reduce the removing force; and removing the wafer from the platen.

摘要翻译： 在化学机械平面化（CMP）工具上减少晶片去除力，其包括在晶片/压板界面处平台化压板上的晶片; 将碳酸水施加到晶片/压板界面，以减少去除力; 并从压板上移除晶片。

公开(公告)号：US07190079B2

公开(公告)日：2007-03-13

申请号：US11265302

申请日：2005-11-03

申请人： Panayotis C. Andricacos ,  Shyng-Tsong Chen ,  John M. Cotte ,  Hariklia Deligianni ,  Mahadevaiyer Krishnan ,  Wei-Tsu Tseng ,  Philippe M. Vereecken

发明人： Panayotis C. Andricacos ,  Shyng-Tsong Chen ,  John M. Cotte ,  Hariklia Deligianni ,  Mahadevaiyer Krishnan ,  Wei-Tsu Tseng ,  Philippe M. Vereecken

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/76846 ,  H01L21/2885 ,  H01L21/6708 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76874 ,  H01L21/76883

摘要： Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.

摘要翻译： 通过在衬垫材料的存在下使用选择性蚀刻和/或选择性电镀选择性地封盖铜来制造图案化的铜结构。 提供了用于解决在电蚀和/或电镀过程中作为电解质增加的电阻路径从晶片边缘向内流动的问题的装置。

公开(公告)号：US20060076685A1

公开(公告)日：2006-04-13

申请号：US11265302

申请日：2005-11-03

申请人： Panayotis Andricacos ,  Shyng-Tsong Chen ,  John Cotte ,  Hariklia Deligianni ,  Mahadevaiyer Krishnan ,  Wei-Tsu Tseng ,  Philippe Vereecken

发明人： Panayotis Andricacos ,  Shyng-Tsong Chen ,  John Cotte ,  Hariklia Deligianni ,  Mahadevaiyer Krishnan ,  Wei-Tsu Tseng ,  Philippe Vereecken

IPC分类号： H01L23/48

CPC分类号： H01L21/76846 ,  H01L21/2885 ,  H01L21/6708 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76874 ,  H01L21/76883

摘要： Patterned copper structures are fabricated by selectively capping the copper employing selective etching and/or selective electroplating in the presence of a liner material. Apparatus for addressing the problem of an increased resistive path as electrolyte during electroetching and/or electroplating flows from the wafer edge inwards is provided.