公开(公告)号：US20190221437A1

公开(公告)日：2019-07-18

申请号：US16239170

申请日：2019-01-03

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01J37/305 ,  H01L21/67

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.

公开(公告)号：US20190057862A1

公开(公告)日：2019-02-21

申请号：US16055974

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Eswaranand VENKATASUBRAMANIAN ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/52

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

公开(公告)号：US20190051496A1

公开(公告)日：2019-02-14

申请号：US16059608

申请日：2018-08-09

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

IPC: H01J37/32

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20180366306A1

公开(公告)日：2018-12-20

申请号：US16113736

申请日：2018-08-27

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

IPC: H01J37/32

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

公开(公告)号：US20160314937A1

公开(公告)日：2016-10-27

申请号：US15198993

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20160314936A1

公开(公告)日：2016-10-27

申请号：US15198969

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20140272211A1

公开(公告)日：2014-09-18

申请号：US14200077

申请日：2014-03-07

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Bradley HOWARD ,  Shahid RAUF ,  Ajit BALAKRISHNA ,  Tom K. CHO ,  Kenneth S. COLLINS ,  Anand KUMAR ,  Michael D. WILLWERTH ,  Yogananda S. VISHWANATH

IPC: H01J37/32 ,  B01D45/08

CPC classification number: H01J37/32495 ,  B01D45/08 ,  B29C66/71 ,  B32B1/02 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32871 ,  Y10T428/13

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

Abstract translation: 本公开的实施例通常提供用于减少半导体处理室中的颗粒的各种装置和方法。 本公开的一个实施例提供一种设置在真空端口上的真空屏幕组件，以防止由真空泵产生的颗粒进入衬底处理区域。 本公开的另一个实施例提供围绕衬底的处理区域的穿孔室衬里。 本公开的另一个实施例提供一种气体分配室衬套，用于在衬底支撑表面下方的衬底支撑件周围分配清洁气体。