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21.发明授权公开(公告)号：US08541796B2
公开(公告)日：2013-09-24
申请号：US11638581
申请日：2006-12-14
IPC分类号： H01L33/00
CPC分类号： H01S5/028 , B82Y20/00 , H01L33/44 , H01S5/0021 , H01S5/2231 , H01S5/34333 , H01S2304/00
摘要： There is provided a nitride semiconductor light emitting device having a light emitting portion coated with a coating film, the light emitting portion being formed of a nitride semiconductor, the coating film in contact with the light emitting portion being formed of an oxynitride film deposited adjacent to the light emitting portion and an oxide film deposited on the oxynitride film. There is also provided a method of fabricating a nitride semiconductor laser device having a cavity with a facet coated with a coating film, including the steps of: providing cleavage to form the facet of the cavity; and coating the facet of the cavity with a coating film formed of an oxynitride film deposited adjacent to the facet of the cavity and an oxide film deposited on the oxynitride film.
摘要翻译： 提供了一种具有涂覆有涂膜的发光部分的氮化物半导体发光器件，该发光部分由氮化物半导体形成，与发光部分接触的涂膜由邻近沉积的氮氧化物膜形成 发光部分和沉积在氧氮化物膜上的氧化膜。 还提供了一种制造氮化物半导体激光器件的方法，该器件具有具有涂覆有涂膜的小面的空腔，包括以下步骤：提供切割以形成腔的小平面; 并用由邻近腔的沉积物沉积的氧氮化物膜和沉积在氧氮化物膜上的氧化膜形成的涂膜涂覆空腔的小面。
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公开(公告)号：US08067255B2
公开(公告)日：2011-11-29
申请号：US12213686
申请日：2008-06-23
IPC分类号： H01L21/00
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.
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公开(公告)号：US07928460B2
公开(公告)日：2011-04-19
申请号：US12314214
申请日：2008-12-05
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0281 , H01S5/0282 , H01S5/2201 , H01S5/34333
摘要： In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the −c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the −c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.
摘要翻译： 在使用六方晶体结构的氮化物半导体的激光芯片1中，使用-c面作为第一谐振器面A，其是发射光的激光芯片1的一侧。 在第一谐振器面A上，即在-c平面上形成刻面保护膜14。 这确保了第一谐振器面A和小面保护膜14之间的牢固的接合，并且减轻了第一谐振器面A的劣化。
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公开(公告)号：US20090200573A1
公开(公告)日：2009-08-13
申请号：US12314214
申请日：2008-12-05
CPC分类号： H01S5/028 , B82Y20/00 , H01S5/0281 , H01S5/0282 , H01S5/2201 , H01S5/34333
摘要： In a laser chip 1 using a nitride semiconductor having a hexagonal crystal structure, the −c plane is used as a first resonator facet A, which is the side of the laser chip 1 through which light is emitted. On the first resonator facet A, that is, on the −c plane, a facet protection film 14 is formed. This ensures firm joint between the first resonator facet A and the facet protection film 14 and alleviates deterioration of the first resonator facet A.
摘要翻译： 在使用六方晶体结构的氮化物半导体的激光芯片1中，使用-c面作为第一谐振器面A，其是发射光的激光芯片1的一侧。 在第一谐振器面A上，即在-c平面上形成刻面保护膜14。 这确保了第一谐振器面A和小面保护膜14之间的牢固的接合，并且减轻了第一谐振器面A的劣化。
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公开(公告)号：US20080303051A1
公开(公告)日：2008-12-11
申请号：US12153314
申请日：2008-05-16
CPC分类号： H01S5/028 , B82Y20/00 , H01L33/44 , H01L2224/48091 , H01L2924/12044 , H01S5/0021 , H01S5/02216 , H01S5/02276 , H01S5/0281 , H01S5/0283 , H01S5/0683 , H01S5/2009 , H01S5/2231 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a light emitting device loaded with a light emitting semiconductor chip with a protective film formed on a light emitting portion, in which the protective film contains a first dielectric film formed of aluminum oxynitride, a second dielectric film formed of silicon nitride or silicon oxynitride, and a third dielectric film formed of an oxide or a fluoride, the first dielectric film is located more toward the light emitting portion than the second dielectric film, and the second dielectric film is located more toward the light emitting portion than the third dielectric film, and a manufacturing method of the light emitting device.
摘要翻译： 本发明提供了一种装载有发光半导体芯片的发光装置，该发光半导体芯片具有形成在发光部分上的保护膜，其中保护膜包含由氮氧化铝形成的第一电介质膜，由氮化硅形成的第二电介质膜或 硅氧氮化物和由氧化物或氟化物形成的第三电介质膜，所述第一电介质膜比所述第二电介质膜更靠近所述发光部分，并且所述第二电介质膜比所述第三电介质膜更靠近所述发光部分 电介质膜和发光器件的制造方法。
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26.发明申请Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device 有权氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件公开(公告)号：US20070205424A1
公开(公告)日：2007-09-06
申请号：US11713761
申请日：2007-03-05
IPC分类号： H01L33/00
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.
摘要翻译： 提供一种氮化物半导体发光器件，其包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜，以及制造氮化物半导体发光器件的方法。 还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。
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27.发明申请公开(公告)号：US20070080368A1
公开(公告)日：2007-04-12
申请号：US11543085
申请日：2006-10-05
CPC分类号： H01S5/2231 , B82Y20/00 , H01L33/44 , H01S5/0021 , H01S5/028 , H01S5/0282 , H01S5/34333
摘要： In a nitride semiconductor laser bar including a group III-V nitride semiconductor layer, on the front-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of aluminum oxide is laid. Likewise, on the rear-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of an aluminum oxide/TiO2 multilayer film is laid.
摘要翻译： 在包括III-V族氮化物半导体层的氮化物半导体激光器棒中，在前侧腔端面上铺设氮化铝的分离层，并且在分离层上，氧化铝的端面涂膜为 铺了 同样地，在后侧腔端面上铺设氮化铝的分离层，并且在分离层上还放置了氧化铝/ TiO 2多层膜的端面涂膜 。
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公开(公告)号：US08400011B2
公开(公告)日：2013-03-19
申请号：US12885073
申请日：2010-09-17
IPC分类号： B60L1/00
CPC分类号： F21V23/0442 , F21S41/14 , F21S41/16 , F21S45/10 , F21V9/30 , F21W2102/00 , F21Y2115/30 , H01S5/005
摘要： An illumination device improved in safety to the eye is provided. The illumination device includes: a semiconductor laser element to serve as an excitation light source which emits laser light; a fluorescent plate which contains a fluorescent substance for emitting light of a desired color and is irradiated with laser light emitted from the semiconductor laser element; a light receiving element part which detects light reflected from the fluorescent plate; and a light source control part which controls laser light emitted from the semiconductor laser element based on a detection signal from the light receiving element part.
摘要翻译： 提供了一种提高眼睛安全性的照明装置。 照明装置包括：半导体激光元件，用作发射激光的激发光源; 荧光板，其包含用于发射所需颜色的光的荧光物质，并且用从所述半导体激光元件发射的激光照射; 检测从荧光板反射的光的受光元件部; 以及光源控制部，其基于来自所述受光元件部的检测信号，控制从所述半导体激光元件发出的激光。
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29.发明授权Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device 有权氮化物半导体发光器件，氮化物半导体发光器件的制造方法以及氮化物半导体晶体管器件公开(公告)号：US08367441B2
公开(公告)日：2013-02-05
申请号：US13200357
申请日：2011-09-23
IPC分类号： H01L21/00
CPC分类号： H01L29/7787 , B82Y20/00 , H01L29/2003 , H01L29/7786 , H01L33/44 , H01S5/028 , H01S5/22 , H01S5/34333
摘要： Example embodiments herein relate to a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminum nitride crystal or an aluminum oxynitride crystal.
摘要翻译： 本发明的实施例涉及包括形成在发光部分并且包括氮化铝晶体或氮氧化铝晶体的涂膜的氮化物半导体发光器件，以及制造氮化物半导体发光器件的方法。 还提供了一种氮化物半导体晶体管器件，其包括与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的氮化物半导体层和栅极绝缘膜。
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30.发明授权Nitride semiconductor light-emitting device and method of manufacturing nitride semiconductor light-emitting device 有权氮化物半导体发光器件和氮化物半导体发光器件的制造方法公开(公告)号：US08319235B2
公开(公告)日：2012-11-27
申请号：US11785981
申请日：2007-04-23
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0014 , H01S5/028 , H01S5/221 , H01S5/2231
摘要： A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.
摘要翻译： 一种氮化物半导体发光器件，包括依次形成在发光部分上的发光部分的涂覆膜和反射控制膜，其中发光部分由氮化物半导体形成，所述涂膜由氮氧化铝膜或 氮化铝膜，反射率控制膜由氧化膜形成，以及制造氮化物半导体发光器件的方法。
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