发明申请
- 专利标题： Nitride semiconductor light-emitting device and method of manufacture thereof
- 专利标题（中）： 氮化物半导体发光器件及其制造方法
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申请号： US11543085申请日： 2006-10-05
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公开(公告)号： US20070080368A1公开(公告)日： 2007-04-12
- 发明人: Takeshi Kamikawa , Yoshinobu Kawaguchi
- 申请人： Takeshi Kamikawa , Yoshinobu Kawaguchi
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 优先权： JP2005-294361 20051007
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/20
摘要：
In a nitride semiconductor laser bar including a group III-V nitride semiconductor layer, on the front-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of aluminum oxide is laid. Likewise, on the rear-side cavity end face, a separation layer of aluminum nitride is laid, and further on the separation layer, an end face coating film of an aluminum oxide/TiO2 multilayer film is laid.
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