摘要:
This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the flux and/or a cross-sectional profile of the ion beam used for implantation. It is often desirable to measure the flux and/or cross-sectional profile of an ion beam in an ion implanter in order to improve control of ion implantation of a semiconductor wafer or similar. The present invention describes adapting the wafer holder to allow such beam profiling to be performed. The substrate holder may be used progressively to occlude the ion beam from a downstream flux monitor or a flux monitor may be located on the wafer holder that is provided with a slit entrance aperture.
摘要:
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
摘要:
This invention relates to a method of scanning a substrate through an ion beam in an ion implanter to provide uniform dosing of the substrate. The method comprises causing relative motion between the substrate and the ion beam such that the ion beam passes over all of the substrate and rotating the substrate substantially about its centre while causing the relative motion. Rotating the substrate while causing the relative motion between the substrate and the ion beam has several advantages including avoiding problematic angular effects, increasing uniformity, increasing throughput and allowing a greater range of ion beam profiles to be tolerated.
摘要:
This invention relates to a method of measuring a property of an ion beam, for example an ion beam current profile or the emittance of an ion beam. A Faraday array comprising an array of ion beam current sensors is employed. The array can provide an ion beam current profile at the plane of the array. The Faraday array is also used in conjunction with an occluding element that may be moved through the ion beam upstream of the Faraday array, there obscuring varying portions of the ion beam from the Faraday array. Suitable manipulation of the signals from the Faraday allows the ion beam current profile to be determined for the plane of the occluding element, and also for the emittance of the ion beam at the plane of the occluding element to be determined.
摘要:
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
摘要:
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
摘要:
This invention is concerned with the control of implanting ions into a substrate, such as doping semiconductor wafers. The ion beam is measured to ensure waters are implanted with the correct, uniform ion dose. The incident ion beam comprises ions and neutrals, yet detectors measure only ions. The ions/neutrals ratio varies with the ion implanter's chamber pressure that in turn is known to rise and fall when the ion beam is on and off the wafer respectively, according to a characteristic time constant. This invention provides methods of correcting measured ionic currents to account for neutrals using the time constant. Initially an assumed time constant is used that is later improved by measuring the ionic current after a delay sufficient to allow the chamber pressure to recover to its base value. The time constant may also be improved by removing any quadratic variation in already determined true beam current values.
摘要:
An ion electrode extraction assembly comprising an ion source 20 and at least one electrode 50 having a gap through which a beam of extracted ions passes in use. An electrode manipulator assembly 55 is provided to move the electrode so as to vary the width of the gap transversely to the ion beam, move the electrode transversely to the ion beam, and move the electrode in the direction of the ion beam. The three degrees of movement being carried out independently of one another.
摘要:
A fluid bearing and seal for an ion implanter is disclosed. The fluid bearing has a stator attached to a base and a moving member provided over the stator so that a fluid bearing can be formed between the opposing surfaces of the stator and the moving member. Either the base or the stator has a locating member extending normal to the bearing surface and the other one of either the base or the stator has a recess shaped to receive the locating member. A fluid seal enables the member to slide in the recess in the normal direction to seal off an enclosed volume between the member and the other one of either the stator or the base. A plurality of fixtures are distributed at points in a plane parallel to the bearing surface to fix the locating member and the other one of either the stator or the base together at these points to form the enclosed volume. The number of the fixtures is the minimum necessary so that the bearing surface of the stator remains undistorted. A fluid controller controls the supply of a fluid to the enclosed volume to maintain the planar bearing surface undistorted under the loading of the moving member.
摘要:
An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.