Invention Grant
- Patent Title: Ion implant apparatus and method of ion implantation
- Patent Title (中): 离子注入装置和离子注入方法
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Application No.: US13226590Application Date: 2011-09-07
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Publication No.: US08378317B1Publication Date: 2013-02-19
- Inventor: Theodore Smick , Geoffrey Ryding , Takao Sakase , William Park, Jr. , Joseph Gillespie , Ronald Horner , Paul Eide
- Applicant: Theodore Smick , Geoffrey Ryding , Takao Sakase , William Park, Jr. , Joseph Gillespie , Ronald Horner , Paul Eide
- Applicant Address: US NH Nashua
- Assignee: GTAT Corporation
- Current Assignee: GTAT Corporation
- Current Assignee Address: US NH Nashua
- Agency: The Mueller Law Office, P.C.
- Main IPC: A61N5/00
- IPC: A61N5/00

Abstract:
An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.
Public/Granted literature
- US20130056655A1 ION IMPLANT APPARATUS AND METHOD OF ION IMPLANTATION Public/Granted day:2013-03-07
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