公开(公告)号：US20110049459A1

公开(公告)日：2011-03-03

申请号：US12697667

申请日：2010-02-01

申请人： Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Young-hyun Kim ,  Heo-ju Shin ,  Jin-ho Oh

发明人： Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Young-hyun Kim ,  Heo-ju Shin ,  Jin-ho Oh

IPC分类号： H01L45/00 ,  G06F12/00

CPC分类号： H01L45/124 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144

摘要： A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)A(IIXIIYIVZ)(1-A), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.

摘要翻译： 非易失性存储器件包括下电极，形成在下电极上的相变材料层以与下电极电连接;以及上电极，形成在相变材料层上，以便电 连接到相变材料层。 相变材料层包括含有由式（I）A（IIXIIYIVZ）（1-A）表示的组合物的相变材料，其中I为As和Se中的至少一种，II为Ge中的至少一种 ，Si和Sn，III是Sb和Bi中的至少一种，IV是Te和Se中的至少一种，并且其中0.001和nlE; A和nlE; 0.3,0.001和nlE; X和nlE; 0.3,0.001和nlE; Y和nlE; 0.8,0.1 ＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

公开(公告)号：US20110049458A1

公开(公告)日：2011-03-03

申请号：US12657715

申请日：2010-01-26

申请人： Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Young-hyun Kim ,  Hee-ju Shin ,  Jin-ho Oh

发明人： Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Young-hyun Kim ,  Hee-ju Shin ,  Jin-ho Oh

IPC分类号： H01L45/00

CPC分类号： H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/141 ,  H01L45/144

摘要： A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.

摘要翻译： 包括具有低工作电压和低功耗的相变材料的非易失性存储器件包括下电极; 相变材料层，形成在下电极上，以与下电极电连接，其中相变材料层包括具有由SnXSbYTeZ表示的组成的相变材料，或者替代地，全部或 部分由硅和/或铟制成的锡，砷和/或锑的铋，以及碲的硒; 以及形成在所述相变材料层上以与所述相变材料层电连接的上电极。 这里，0.001＆nlE; X＆lt; NE; 0.3，0.001＆nlE; Y＆nlE; 0.8,0.1＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

公开(公告)号：US20060016396A1

公开(公告)日：2006-01-26

申请号：US11179136

申请日：2005-07-12

申请人： Bong-Jin Kuh ,  Horii Hideki ,  Soon-Oh Park ,  Jang-Eun Lee ,  Yong-Ho Ha

发明人： Bong-Jin Kuh ,  Horii Hideki ,  Soon-Oh Park ,  Jang-Eun Lee ,  Yong-Ho Ha

IPC分类号： C23C16/00

CPC分类号： C23C14/165 ,  C23C14/046 ,  C23C14/35 ,  C23C14/50

摘要： An apparatus for depositing a thin film on a substrate includes a housing, a substrate support portion, a securing member, a heater, a target member and a plasma generator. The housing defines a process chamber. The substrate support portion is disposed in the process chamber to support the substrate. The securing member is adapted to non-electrically secure the substrate to the substrate support portion during performance of a process. The heater is provided to maintain the substrate supported by the substrate support portion at a process temperature. The target member faces the substrate support portion and includes materials to be deposited on the substrate. The plasma generator is adapted to excite a process gas supplied into the process chamber into a plasma state.

摘要翻译： 用于在衬底上沉积薄膜的装置包括壳体，衬底支撑部分，固定构件，加热器，目标构件和等离子体发生器。 壳体限定了处理室。 衬底支撑部分设置在处理室中以支撑衬底。 固定构件适于在执行过程期间将基板非电气地固定到基板支撑部分。 提供加热器以将基板支撑部分支撑的基板保持在处理温度。 目标构件面向衬底支撑部分并且包括待沉积在衬底上的材料。 等离子体发生器适于将供应到处理室中的工艺气体激发成等离子体状态。

公开(公告)号：US06686620B2

公开(公告)日：2004-02-03

申请号：US10109432

申请日：2002-03-27

申请人： Hyeong-Geun An ,  Soon-Oh Park

发明人： Hyeong-Geun An ,  Soon-Oh Park

IPC分类号： H01L27108

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L27/10882 ,  H01L28/57

摘要： A FRAM having a ferroelectric capacitor comprises a cylindrical type bottom electrode. A ferroelectric film is thinly stacked over the bottom electrode, and the first portion of the top electrode formed over and conformal to the ferroelectric film. A void that is left between sidewalls of the first portion of the electrode over the ferroelectric film is then filled with fill material for a fill layer. The fill material of the fill layer is then planarized to be level with and expose an upper surface of the first portion of the top electrode. A second portion of the top electrode is then formed over the fill layer and in contact with the exposed, e.g. peripheral regions of the first portion of the electrode. The fill material of the fill layer may be formed of polysilicon, silicon oxide or other material such as another metal. Additionally, the fill layer may be formed of a fill material that has a superior gap fill capability or of a material that has a low stress relationship with respect to the capacitor's top metal.

摘要翻译： 具有铁电电容器的FRAM包括圆柱形底部电极。 铁电体薄膜层叠在底部电极上，并且顶部电极的第一部分形成在铁电膜上并与其形成共形。 然后，在铁电体膜上的电极的第一部分的侧壁之间留下的空隙填充有用于填充层的填充材料。 然后将填充层的填充材料平坦化以与顶部电极的第一部分的上表面平齐并暴露。 然后，顶部电极的第二部分形成在填充层之上并与暴露的例如电极接触。 电极的第一部分的周边区域。 填充层的填充材料可以由多晶硅，氧化硅或其它材料例如另一种金属形成。 另外，填充层可以由具有优异间隙填充能力的填充材料或与电容器的顶部金属具有低应力关系的材料形成。

公开(公告)号：US6025223A

公开(公告)日：2000-02-15

申请号：US57096

申请日：1998-04-08

申请人： Soon-oh Park

发明人： Soon-oh Park

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/92

CPC分类号： H01L28/40

摘要： Capacitors and methods of fabricating high dielectric capacitors which do not create a step difference where the high dielectric material is formed are provided. These methods include forming a first electrode layer on an integrated circuit device substrate and a layer of high dielectric material on the first electrode layer opposite the integrated circuit device substrate. A second electrode layer is formed on the layer of high dielectric material opposite the first electrode layer. The first electrode layer, the high dielectric layer and the second electrode layer are patterned to form a capacitor cell unit having a sidewall which extends from the first electrode beyond the layer of high dielectric material and to the second electrode layer. An insulating spacer is formed on the sidewall of the capacitor cell unit extending from the first electrode layer to the second electrode layer.

摘要翻译： 提供了制造不形成高介电材料的台阶差的高介电电容器的电容器和方法。 这些方法包括在集成电路器件衬底上形成第一电极层和在与集成电路器件衬底相对的第一电极层上形成高介电材料层。 在与第一电极层相对的高电介质材料层上形成第二电极层。 对第一电极层，高电介质层和第二电极层进行图案化以形成具有从第一电极延伸超过高电介质材料层到第二电极层的侧壁的电容器单元单元。 在从第一电极层延伸到第二电极层的电容器单元单元的侧壁上形成绝缘间隔物。

公开(公告)号：US08865558B2

公开(公告)日：2014-10-21

申请号：US13543905

申请日：2012-07-09

申请人： Jeong-Hee Park ,  Soon-Oh Park ,  Jung-Hwan Park ,  Jin-Ho Oh

发明人： Jeong-Hee Park ,  Soon-Oh Park ,  Jung-Hwan Park ,  Jin-Ho Oh

IPC分类号： H01L47/00 ,  H01L45/00

CPC分类号： H01L45/06 ,  H01L45/141 ,  H01L45/1683

摘要： A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.

摘要翻译： 形成相变材料层图案的方法包括：通过绝缘中间层形成部分填充开口的相变材料层。 在相变材料层上进行等离子体处理工艺以去除相变材料层的表面上的氧化物层。 在相变材料层上进行热处理工艺以去除相变材料层中的空隙或接缝，充分填充开口。

公开(公告)号：US08299450B2

公开(公告)日：2012-10-30

申请号：US12697667

申请日：2010-02-01

申请人： Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Young-hyun Kim ,  Heo-ju Shin ,  Jin-ho Oh

发明人： Dong-ho Ahn ,  Hideki Horii ,  Soon-oh Park ,  Young-hyun Kim ,  Heo-ju Shin ,  Jin-ho Oh

IPC分类号： H01L29/12

CPC分类号： H01L45/124 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144

摘要： A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)A(IIXIIIYIVZ)(1-A), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.

摘要翻译： 非易失性存储器件包括下电极，形成在下电极上的相变材料层以与下电极电连接;以及上电极，形成在相变材料层上，以便电 连接到相变材料层。 相变材料层包括含有由式（I）A（IIXIIIYIVZ）（1-A）表示的组合物的相变材料，其中I为As和Se中的至少一种，II为Ge中的至少一种 ，Si和Sn，III是Sb和Bi中的至少一种，IV是Te和Se中的至少一种，并且其中0.001和nlE; A和nlE; 0.3,0.001和nlE; X和nlE; 0.3,0.001和nlE; Y和nlE; 0.8,0.1 ＆nlE; Z＆nlE; 0.8和X + Y + Z = 1。

公开(公告)号：US08133758B2

公开(公告)日：2012-03-13

申请号：US12623513

申请日：2009-11-23

申请人： Gyu-Hwan Oh ,  Young-Lim Park ,  Soon-Oh Park ,  Jin-Il Lee ,  Chang-Su Kim

发明人： Gyu-Hwan Oh ,  Young-Lim Park ,  Soon-Oh Park ,  Jin-Il Lee ,  Chang-Su Kim

IPC分类号： H01L21/00

CPC分类号： H01L45/124 ,  C23C16/32 ,  C23C16/45523 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/16 ,  H01L45/1666

摘要： Provided is a method of fabricating a phase-change memory device. The phase-change memory device includes a memory cell having a switching device and a phase change pattern. The method includes; forming a TiC layer on a contact electrically connecting the switching device using a plasma enhanced cyclic chemical vapor deposition (PE-cyclic CVD) process, patterning the TiC layer to form a lower electrode on the contact, and forming the phase-change pattern on the lower electrode.

摘要翻译： 提供一种制造相变存储器件的方法。 相变存储器件包括具有开关器件和相变模式的存储器单元。 该方法包括： 在使用等离子体增强循环化学气相沉积（PE循环CVD）工艺电连接开关装置的触点上形成TiC层，图案化TiC层以在触点上形成下电极，并在 下电极。