公开(公告)号：US12289635B2

公开(公告)日：2025-04-29

申请号：US17730692

申请日：2022-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Satya Kumar Vankayala ,  Rajesh Challa ,  Pankaj Bhimrao Thorat ,  Seungil Yoon ,  Swaraj Kumar ,  Ashvin K Joseph

IPC: H04W28/02

Abstract: Embodiments herein provide a method for managing a network slice load in a wireless network. The method includes: sending, by a CN device, a request message for network slice load information to a base station of the wireless network; determining, by the base station, the network slice load based on the parameter; sending, by the base station, the response message comprising the network slice load information to the core network device for managing the network slice load; determining, by a CN device, the network slice load at the base station based on the response message; and managing, by a CN device, the network slice load at the base station.

公开(公告)号：US12289620B2

公开(公告)日：2025-04-29

申请号：US17871442

申请日：2022-07-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Satya Kumar Vankayala ,  Ashvin Kaithara Joseph ,  Seungil Yoon

IPC: H04W24/02 ,  H04L41/147 ,  H04W24/08 ,  H04W36/00

Abstract: A method of enabling multi-connectivity in a wireless network includes predicting at least one of a RLF, a call drop, and a jitter based on a plurality of Key Performance Indicators (KPIs) associated with the UE and the wireless network, determining whether the UE is in one of a Dual Connectivity (DC) mode and a carrier aggregation (CA) mode, performing one of: adding a new secondary gNodeB (gNB) in response to determining that the UE is not in both the DC mode and the CA mode and converting the new gNB to a master gNB, converting an existing secondary gNodeB to a master gNodeB with one of an existing Master Cell Group (MCG) gNodeB and another gNodeB as the secondary gNodeB, in response to determining that the UE is in the DC mode, and converting an existing secondary cell to a primary cell.

公开(公告)号：US12289557B2

公开(公告)日：2025-04-29

申请号：US18329322

申请日：2023-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehoon Jun

IPC: H04N25/78 ,  H03G3/00 ,  H03M1/12 ,  H03M1/18 ,  H04N25/709

Abstract: Disclosed is an amplifier circuit including a first input terminal that receives a ramp signal, a second input terminal that receives a pixel signal, an output terminal that outputs an output signal, wherein the output signal is based on comparing the pixel signal and the ramp signal, a capacitor that is electrically connected between the output terminal and a ground terminal, a switch that is electrically connected with the capacitor, and a current source that outputs a power current. The pixel signal corresponds to a first conversion gain or a second conversion gain, and a value of the second conversion gain is higher than a value of the first conversion gain, and a bandwidth of the amplifier circuit is adjusted depending on whether the pixel signal corresponds to the first conversion gain or the second conversion gain.

公开(公告)号：US12289537B2

公开(公告)日：2025-04-29

申请号：US18323500

申请日：2023-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Manish Goel ,  Girish Kalyanasundaram ,  Puneet Pandey ,  Manjit Hota

IPC: H04N23/80 ,  H04N25/46 ,  H04N25/74

Abstract: A method of performing image signal processing includes: determining whether at least one neighbor pixel is available for each of a plurality of current pixels in a current block, wherein each of the plurality of current pixels has a current pixel value; estimating a predict pixel value for each of the plurality of current pixels in the current block based on a pixel value of the at least one neighbor pixel corresponding to each of the plurality of current pixels, using at least one of a plurality of predefined prediction modes; determining a difference metric between the predict pixel value and the current pixel value for each of the plurality of current pixels; and obtaining a processed pixel value for each of the plurality of current pixels based on the difference metric.

公开(公告)号：US12289105B2

公开(公告)日：2025-04-29

申请号：US18514975

申请日：2023-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngho Choi ,  Donghyuk Lim ,  Kibaek Kwon

IPC: H03K21/00 ,  H03K5/13 ,  H03K5/24 ,  H03K19/21

Abstract: An electronic device includes a first sample circuit configured to generate a first sampling signal by sampling an input signal in response to edges of a clock signal, a first comparator configured to generate a first logic decision signal by comparing a voltage level of the first sampling signal with a reference voltage level, an analog bang-bang phase detector configured to generate a first detection signal by executing an exclusive OR (XOR) operation on successive samples of the first logic decision signal, and a digitally controlled oscillator configured to vary a frequency of the clock signal according to the first detection signal.

公开(公告)号：US12288991B2

公开(公告)日：2025-04-29

申请号：US17751105

申请日：2022-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonkyung Jang ,  Kawon Cheon ,  Jaeseok Park ,  Jaehyun Park ,  Joayoung Lee ,  Hoon Han

IPC: H02J50/00 ,  H02J7/00 ,  H02J50/12 ,  H02J50/80 ,  H02J50/90

Abstract: A wireless power receiving device includes a first housing, a second housing coupled to the first housing to be changed in relative position with respect to the first housing, a first resonance circuit disposed in the first housing, and at least one processor. The at least one processor may be configured to control the wireless power receiving device to wirelessly receive power from a wireless power transmitting device through the first resonance circuit, identify a charging efficiency corresponding to the received wireless power, and in case the identified charging efficiency is less than a threshold, provide content for changing an angle between the first housing and the second housing.

公开(公告)号：US12288837B2

公开(公告)日：2025-04-29

申请号：US17569323

申请日：2022-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghun Lee ,  Kyoungjun Kim ,  Seolyoung Choi

IPC: H01L33/62 ,  H01L33/56 ,  H01L33/60

Abstract: A semiconductor light emitting device package, includes: a ceramic substrate having first and second electrode structures; a light emitting diode chip mounted on the ceramic substrate, electrically connected to the first and second electrode structures, and configured to emit ultraviolet light; a sidewall structure disposed on the ceramic substrate, providing a cavity surrounding the light emitting diode chip, and including an alloy having a thermal expansion coefficient in a range of 2 to 10 ppm/° C. and a Young's modulus in a range of 100 to 300 Gpa; and a glass cover disposed on the sidewall structure to seal the cavity.

公开(公告)号：US12288796B2

公开(公告)日：2025-04-29

申请号：US17519750

申请日：2021-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyun Go

IPC: H01L27/146 ,  H01L29/423

Abstract: Disclosed are a semiconductor device and an image sensor including the same. The semiconductor device includes a device isolation layer defining an active region on a semiconductor substrate, a gate electrode crossing the active region, a gate insulating pattern between the gate electrode and the semiconductor substrate, a first impurity region provided at a first side of the gate electrode in the active region, and a second impurity region provided at a second side of the gate electrode in the active region, and the gate insulating pattern includes a first edge portion adjacent to a first sidewall of the device isolation layer, a second edge portion adjacent to a second sidewall of the device isolation layer, and a center portion between the first and second edge portions, and the first edge portion has a first thickness, and the second edge portion has a second thickness smaller than the first thickness.

公开(公告)号：US12288788B2

公开(公告)日：2025-04-29

申请号：US17410326

申请日：2021-08-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inyeal Lee ,  Jinwook Kim ,  Dongbeen Kim ,  Deokhan Bae ,  Junghoon Seo ,  Myungyoon Um ,  Jongmil Youn ,  Yonggi Jeong

IPC: H01L27/088 ,  H01L23/50

Abstract: An integrated circuit device includes substrate including a fin-type active area extending on the substrate in a first direction parallel to an upper surface of the substrate, a first gate line crossing the fin-type active area on the substrate and extending in a second direction perpendicular to the first direction, a cut gate line extending in the second direction and being spaced apart from the first gate line with a first gate cut area therebetween, a second gate line extending in the second direction and being spaced apart from the cut gate line with a second gate cut area therebetween, and a power wiring disposed on the cut gate line.

公开(公告)号：US12288773B2

公开(公告)日：2025-04-29

申请号：US17720403

申请日：2022-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihye Yeon

IPC: H01L25/075 ,  H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L33/50 ,  H01L33/62

Abstract: A display apparatus includes a circuit substrate with driving circuits and first bonding electrodes, and a pixel array having LED cells, each of the LED cells including first and second conductivity-type semiconductor layers with an active layer therebetween, second bonding electrodes on the first bonding electrodes, wavelength converters on the LED cells, an upper semiconductor layer on the LED cells and having a partition structure surrounding side snakes of the wavelength converters and separating the wavelength converters, a first reflective electrode on the side surfaces of the LED cells, spaced from the LED cells by a passivation layer, and extending between the LED cells, second reflective electrodes on the lower surfaces of the LED cells and connected to the second conductivity-type semiconductor layers, a common electrode on at least one side of the LED cells, and a pad electrode outside the LED cells and electrically connected to the driving circuits.