公开(公告)号：US20240405037A1

公开(公告)日：2024-12-05

申请号：US18407163

申请日：2024-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyunha Park ,  Jonghyun Go ,  Ji-Youn Song ,  Keun Yeong Cho

IPC: H01L27/146

Abstract: The present disclosure relates to image sensors. An example image sensor includes a first substrate, a transmission transistor, a second substrate, multiple transistors, multiple wires, and a deep node. The first substrate includes a first side, a second side facing the first side, and a photoelectric conversion area. The transmission transistor is disposed on the first side of the first substrate. The second substrate includes a first side and a second side facing each other. The transistors are disposed on the first side of the second substrate and connected with the transmission transistor. The wires are disposed on the second side of the second substrate. The deep node penetrates the second substrate. The first side of the first substrate and the first side of the second substrate face each other. The transistors and one or more wires are connected through the deep node.

公开(公告)号：US11929375B2

公开(公告)日：2024-03-12

申请号：US17693760

申请日：2022-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun Go ,  Jae-Kyu Lee

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14683

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US10608026B2

公开(公告)日：2020-03-31

申请号：US15650102

申请日：2017-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun Go ,  Jae-Kyu Lee

IPC: H01L27/146

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US12288796B2

公开(公告)日：2025-04-29

申请号：US17519750

申请日：2021-11-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghyun Go

IPC: H01L27/146 ,  H01L29/423

Abstract: Disclosed are a semiconductor device and an image sensor including the same. The semiconductor device includes a device isolation layer defining an active region on a semiconductor substrate, a gate electrode crossing the active region, a gate insulating pattern between the gate electrode and the semiconductor substrate, a first impurity region provided at a first side of the gate electrode in the active region, and a second impurity region provided at a second side of the gate electrode in the active region, and the gate insulating pattern includes a first edge portion adjacent to a first sidewall of the device isolation layer, a second edge portion adjacent to a second sidewall of the device isolation layer, and a center portion between the first and second edge portions, and the first edge portion has a first thickness, and the second edge portion has a second thickness smaller than the first thickness.

公开(公告)号：US11935906B2

公开(公告)日：2024-03-19

申请号：US17686680

申请日：2022-03-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun Go ,  Jae-Kyu Lee

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14683

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.

公开(公告)号：US11302725B2

公开(公告)日：2022-04-12

申请号：US16794864

申请日：2020-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonghyun Go ,  Jae-Kyu Lee

IPC: H01L27/146

Abstract: An image sensor for securing an area of a photodiode includes a pixel area and a transistor area adjacent to the pixel area. The pixel area may include a photodiode and a floating diffusion area. The transistor area may include transistors extending along an edge of the pixel area. The transistors in the transistor area may include a reset transistor, one or more source follower transistors, and one or more selection transistors, and the reset transistor and one source follower transistor adjacent to the reset transistor may share a common drain area. The source follower transistors and the selection transistors may each share a common source area or a common drain area between two adjacent transistors thereof.