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公开(公告)号:US20250053195A1
公开(公告)日:2025-02-13
申请号:US18594045
申请日:2024-03-04
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: TECK SOO KIM , JUNG A LEE
IPC: G06F1/16
Abstract: A display device comprises a display panel, a window member disposed on the display panel, and an alignment mark layer disposed on a lower surface of the window member. The alignment mark layer comprises a light blocking layer disposed on the lower surface of the window member, and a pattern layer disposed on the light blocking layer. The pattern layer includes a through hole penetrating the pattern layer and exposing the light blocking layer.
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公开(公告)号:US20250053181A1
公开(公告)日:2025-02-13
申请号:US18677569
申请日:2024-05-29
Applicant: Samsung Display Co., LTD.
Inventor: KYU YOUNG KANG , JAEWAN KIM , JANGHO KIM
IPC: G05D1/667 , G05D105/28 , G05D107/70
Abstract: A method of managing a departure of an automated guided vehicle includes generating a work order for transporting an article stored on shelves immediately next to a first port from the first port to a second port and setting a priority of the work order, generating a movement order for moving the automated guided vehicle from a current point of the automated guided vehicle to the first port based on the work order and the priority of the work order, determining a queue value of the first port which is a number of the shelves storing the article included in the first port, and setting a port priority based on the queue value of the first port and resetting the priority of the work order based on the port priority.
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243.
公开(公告)号:US20250051254A1
公开(公告)日:2025-02-13
申请号:US18798273
申请日:2024-08-08
Applicant: Samsung Display Co., Ltd.
Inventor: Sehun Kim , Jungho Jo , Yunku Jung , Changyeol Han
Abstract: A composition includes a solvent containing one or more types (kinds) of first compounds represented by Formula 1 and a metal oxide not including zinc: Z—O-L1-O-(L2-O)n—R1. Formula 1
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公开(公告)号:US20250051177A1
公开(公告)日:2025-02-13
申请号:US18652634
申请日:2024-05-01
Applicant: Samsung Display Co., Ltd.
Inventor: Jungho JO , SEHUN KIM , WON-JUN PARK , CHUL SOON PARK , JONGWOO SHIN , Chungman YU
IPC: C01G19/02 , H10K50/115 , H10K50/16 , H10K85/40
Abstract: An electronic transport composition including inorganic particles (each) represented by Formula 1, and a solvent represented by Formula 2, and when the electron transport composition is applied to a light-emitting element, luminous efficiency characteristics and element lifespan characteristics may be improved. Zn1-xMxO Formula 1 R1—O—(R2—O)n—R3 Formula 2
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公开(公告)号:US20250050657A1
公开(公告)日:2025-02-13
申请号:US18630247
申请日:2024-04-09
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Jae Gi YOO , Byung Su KIM
Abstract: An apparatus for manufacturing a display device includes: a stage; an ejection head overlapping the stage, wherein the ejection head includes a main body part and a nozzle part, wherein the main body part houses ink, and the nozzle part includes a nozzle tip and a first housing surrounding the nozzle tip; and a detection sensor interposed between the nozzle tip and the first housing.
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公开(公告)号:US12225796B2
公开(公告)日:2025-02-11
申请号:US16925186
申请日:2020-07-09
Applicant: Samsung Display Co., LTD.
Inventor: Jun Hyun Park , Dong Woo Kim , Sung Jae Moon , Kang Moon Jo
IPC: H10K59/131
Abstract: An organic light emitting diode display includes a clock wiring circuit including a first signal line and a second signal line, a resistance adjusting circuit including a first lower resistance line and a first upper resistance line connected to the first signal line and a second lower resistance line and a second upper resistance line connected to the second signal line, and a gate driving circuit connected to the resistance adjusting circuit. The second signal line is disposed closer to the gate driving circuit than the first signal line, the first lower resistance line and the second lower resistance line have higher resistivity than the first upper resistance line and the second upper resistance line, respectively, the first lower resistance line is shorter than the second lower resistance line, and the first upper resistance line is longer than the second upper resistance line.
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公开(公告)号:US12225794B2
公开(公告)日:2025-02-11
申请号:US18373277
申请日:2023-09-27
Applicant: Samsung Display Co., Ltd.
Inventor: Soyoung Koo , Eoksu Kim , Hyungjun Kim , Yunyong Nam , Junhyung Lim , Kyungjin Jeon
IPC: H10K59/131 , G09G3/3266 , G09G3/3291 , H10K59/122 , H10K59/12
Abstract: A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.
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公开(公告)号:US12225782B2
公开(公告)日:2025-02-11
申请号:US18454420
申请日:2023-08-23
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor: Chungi You , Hyounghak Kim
IPC: H10K59/126 , H10K50/844 , H10K59/35 , H10K59/65 , H10K71/00 , H10K59/123 , H10K59/124 , H10K102/10
Abstract: A display apparatus includes a substrate including a main display area, a component area, and a peripheral area. The component area includes a transmission area, and the peripheral area is arranged outside the main display area. The display apparatus further includes a main thin-film transistor arranged in the main display area, a main organic light-emitting diode arranged in the main display area and connected to the main thin-film transistor, an auxiliary thin-film transistor arranged in the component area, an auxiliary organic light-emitting diode arranged in the component area and connected to the auxiliary thin-film transistor, and a lower metal layer arranged between the substrate and the auxiliary thin-film transistor in the component area and having an undercut structure.
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公开(公告)号:US12225771B2
公开(公告)日:2025-02-11
申请号:US17318350
申请日:2021-05-12
Applicant: Samsung Display Co., Ltd.
Inventor: Hyungjun Kim , Soyoung Koo , Eok Su Kim , Yunyong Nam , Jun Hyung Lim , Kyungjin Jeon
IPC: H10K59/121 , H10K59/126 , H10K71/00 , H10K59/12 , H10K59/123
Abstract: A display device includes a first transistor including a first transistor including a light blocking pattern on a substrate, an active pattern on the light blocking pattern, and a gate electrode on the active pattern, a second transistor configured to provide a data voltage to the first transistor in response to a gate signal, and a storage capacitor electrically connected to the gate electrode and the light blocking pattern, and including a first conductive pattern in a same layer as the light blocking pattern, a second conductive pattern on the first conductive pattern and overlapping the first conductive pattern, a third conductive pattern in a same layer as the gate electrode, overlapping the second conductive pattern, and electrically connected to the first conductive pattern, and a fourth conductive pattern on the third conductive pattern, overlapping the third conductive pattern, and electrically connected to the second conductive pattern.
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公开(公告)号:US12225770B2
公开(公告)日:2025-02-11
申请号:US18525662
申请日:2023-11-30
Applicant: Samsung Display Co., LTD.
Inventor: Keun Woo Kim , Tae Wook Kang , Han Bit Kim , Bum Mo Sung , Do Kyeong Lee , Jae Seob Lee
IPC: H10K59/121 , H01L21/02 , H01L27/12 , H01L29/423 , H01L29/66 , H01L29/786 , H10K59/12
Abstract: A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.
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