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公开(公告)号：US06835299B1
公开(公告)日：2004-12-28
申请号：US10111141
申请日：2002-09-03
申请人： Boris Tchugunov
发明人： Boris Tchugunov
IPC分类号： C25F300
CPC分类号： B23H7/28 , B23H3/00 , B23H7/18 , B23H7/38 , B23H2300/10
摘要： An electrochemical machining technique involves moving a cathode (2) towards an anodic workpiece (1). A current is passed through an electrolyte which flows between the cathode (2) and workpiece (1) so as to cause material to be removed electrolytically from the workpiece (1). A vibratory movement is imposed on the cathode (2) and the current passed between the cathode (2) and workpiece (1) is also varied. The vibratory movement may consist of a main sinusoidal oscillation and a secondary ultrasonic vibration, and the current variation is synchronized with the main vibration so that current pulses, and ultrasonic vibration pulses, coincide, with a predetermined small phase shift, with peaks of the main vibration corresponding to the smallest gap between the cathode (2) and workpiece (1).
摘要翻译： 电化学加工技术涉及将阴极（2）移向阳极工件（1）。 电流通过在阴极（2）和工件（1）之间流动的电解质，以使材料从工件（1）电解除去。 在阴极（2）上施加振动，并且在阴极（2）和工件（1）之间通过的电流也是变化的。 振动运动可以由主正弦振荡和二次超声波振动组成，并且电流变化与主振动同步，使得电流脉冲和超声波振动脉冲与预定的小相移一致，其中主振峰 对应于阴极（2）和工件（1）之间的最小间隙的振动。
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公开(公告)号：US06582585B2
公开(公告)日：2003-06-24
申请号：US09938495
申请日：2001-08-27
IPC分类号： C25F300
摘要： The method according to the invention comprises a macrographic etching step followed by a “bleaching” step by electrolytic etching by means of a bath containing at least phosphoric acid and a weak acid. This method allows components made of superalloys to be easily and effectively inspected, including when they contain elements such as rhenium or ruthenium.
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公开(公告)号：US06565734B2
公开(公告)日：2003-05-20
申请号：US09817582
申请日：2001-03-26
申请人： Soo-Hyun Kim , Young-Mo Lim , Hyung-Jun Lim
发明人： Soo-Hyun Kim , Young-Mo Lim , Hyung-Jun Lim
IPC分类号： C25F300
CPC分类号： C25F3/00
摘要： An electrochemical process using current density controlling techniques is disclosed. In the electrochemical process of this invention, a carbon cathode rod activated with a negative voltage and an electrode activated with a positive voltage are sunk into an electrolyte contained in a container, and so the electrode is electrochemically etched while properly controlling both the metal ion dissolving rate and the metal ion diffusing rate of the electrode by controlling the amount of applied current to maintain the two rates at a desired balance. This process thus creates a diffusion effect thickening the tip of the cylindrical electrode, and compensates for a conventional geometric effect sharpening the tip of the electrode. Therefore, this process produces a precise product having a uniform diameter along its length. In the electrochemical process of this invention, the electrode is ultrasonically washed on its surface with both acetone and distilled water before the process so as to remove impurities from the surface of the electrode. In addition, the electrolyte is a potassium hydroxide solution having a molar density of 4˜6 M.
摘要翻译： 公开了使用电流密度控制技术的电化学方法。 在本发明的电化学方法中，用负电压激活的碳阴极杆和用正电压激活的电极被吸入容纳在容器中的电解质中，因此电极被电化学蚀刻，同时适当地控制金属离子溶解 速率和电极的金属离子扩散速率，通过控制施加的电流量将两个速率保持在期望的平衡。 因此，该过程产生扩散效应，使圆柱形电极的尖端增厚，并补偿了锐化电极尖端的常规几何效应。 因此，该方法产生沿其长度具有均匀直径的精确产品。 在本发明的电化学方法中，在该方法之前，用丙酮和蒸馏水在其表面上超声波清洗电极，以从电极表面除去杂质。 此外，电解质是摩尔密度为4〜6M的氢氧化钾溶液。
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公开(公告)号：US06521118B1
公开(公告)日：2003-02-18
申请号：US09600376
申请日：2000-11-22
IPC分类号： C25F300
CPC分类号： H01L21/3063 , C25F3/12 , C25F7/00 , H01L21/30635
摘要： There is provided a process for etching a semiconductor material, comprising the steps of: providing an electrochemical cell containing an etching electrolyte, the etching electrolyte being selected from the group of acidic electrolyte solutions, alkaline solutions, neutral solutions, and molten electrolytes; immersing the semiconductor material in the etching electrolyte, whereby at least one surface of the semiconductor material contacts the etching electrolyte; thereafter negatively biasing the semiconductor material; and while continuing to negatively bias the semiconductor material, illuminating at least part of the at least one surface of the semiconductor material which contacts the etching electrolyte with light selected from the group of ultraviolet, visible, and infrared light. There is also provided an apparatus for effecting the process of the invention, as well as semiconductor materials so etched.
摘要翻译： 提供了一种用于蚀刻半导体材料的方法，包括以下步骤：提供含有蚀刻电解质的电化学电池，所述蚀刻电解质选自酸性电解质溶液，碱性溶液，中性溶液和熔融电解质; 将半导体材料浸渍在蚀刻电解质中，由此半导体材料的至少一个表面与蚀刻电解质接触; 然后对半导体材料施加负偏压; 并且在继续对半导体材料进行负偏压的同时，用从紫外线，可见光和红外光组中选择的光照射与蚀刻电解质接触的半导体材料的至少一个表面的至少一部分。 还提供了用于实现本发明方法的设备以及如此蚀刻的半导体材料。
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公开(公告)号：US06245213B1
公开(公告)日：2001-06-12
申请号：US09262740
申请日：1999-03-05
申请人： Lennart Olsson , Babak Heidari
发明人： Lennart Olsson , Babak Heidari
IPC分类号： C25F300
摘要： In a method for anisotropic etching of a structure in an electrically conductive substance to be etched, use is made of an etchant which in concentrated solution is usable for isotopic etching of structures in the substance to be etched. The substance to be etched is contacted with the etchant in a solution which is so diluted that the etchant is unusable for isotropic etching. The etchant is subjected, adjacent to the substance to be etched, to an electric field of such a strength that anisotropic etching of the substance to be etched is accomplished. Moreover, an etching fluid is described, comprising an etchant in dilute solution, in which the etchant is present in a concentration of 200 mM at most, and use of such an etching fluid for making structures which are 50 &mgr;m or less is also described.
摘要翻译： 在要蚀刻的导电物质中的结构的各向异性蚀刻的方法中，使用在浓缩溶液中用于蚀刻物质中的结构的同位素蚀刻的蚀刻剂。 要蚀刻的物质在溶液中与蚀刻剂接触，溶液如此稀释，使得蚀刻剂不能用于各向同性蚀刻。 将蚀刻剂与待蚀刻的物质相邻地进行到这样的强度，即要实现蚀刻物质的各向异性腐蚀。 此外，描述了一种蚀刻流体，其包括在稀溶液中的蚀刻剂，其中蚀刻剂最多以200mM的浓度存在，并且还描述了使用这种蚀刻流体来制造50μm或更小的结构。
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公开(公告)号：US06234752B1
公开(公告)日：2001-05-22
申请号：US09444656
申请日：1999-11-22
申请人： Bin Wei , Hsin-Ping Wang
发明人： Bin Wei , Hsin-Ping Wang
IPC分类号： C25F300
CPC分类号： B23H9/16 , B23H3/00 , B23H3/04 , B23H9/00 , B23H9/10 , F01D5/186 , F01D5/187 , F05D2230/11 , F05D2250/25 , F05D2260/2212
摘要： An electrochemical machining process is disclosed for forming multiple raised areas having multiple heights in a wall of predrilled holes within a workpiece. Positioned within each hole is an electrode coated with an insulating material in a pattern defining the raised areas to be formed in the wall of each respective hole. An electric current is applied from a power supply to each of the electrodes. A resistor is positioned between the power supply and at least one of the electrodes to vary the voltage passing through the electrode to vary the amount of material removed within that respective hole.
摘要翻译： 公开了用于在工件内的预钻孔的壁上形成具有多个高度的多个凸起区域的电化学加工工艺。 位于每个孔内的电极是以绝缘材料涂覆的电极，该电极限定要形成在每个相应孔的壁中的凸起区域。 从电源向每个电极施加电流。 电阻器位于电源和至少一个电极之间，以改变通过电极的电压，以改变在相应的孔内去除的材料的量。
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17.发明授权Method and apparatus for radiation assisted electrochemical etching and etched product 失效辐射辅助电化学蚀刻和蚀刻产品的方法和装置公开(公告)号：US06790340B1
公开(公告)日：2004-09-14
申请号：US10009521
申请日：2001-12-11
IPC分类号： C25F300
CPC分类号： H01L21/3063 , C25F3/12
摘要： An electrochemical etching system has an etching bath for holding an n-type silicon substrate with a first surface of the substrate in contact with hydrofluoric acid, an electrode positioned in the hydrofluoric acid, a power source having a positive pole connected to the silicon substrate and a negative pole connected to the electrode, and an illumination unit having a light source for illumination of a second surface of the silicon substrate. The illumination unit illuminates the second surface of the silicon substrate with an illumination intensity of 10 m W/cm2 or more. A ratio of a maximum illumination to a minimum illumination of the second surface of the silicon substrate is 1.69:1 or less. With the etching system, pores and/or trenches of a certain size and shape can be formed in an entire area of the silicon substrate having a diameter of more than three inches.
摘要翻译： 电化学蚀刻系统具有用于保持n型硅衬底的蚀刻浴，其中衬底的第一表面与氢氟酸接触，位于氢氟酸中的电极，具有连接到硅衬底的正极的电源和 连接到电极的负极和具有用于照射硅衬底的第二表面的光源的照明单元。 照明单元以10mW / cm 2以上的照明强度照射硅衬底的第二表面。 硅衬底的第二表面的最大照度与最小照度的比为1.69:1或更小。 利用蚀刻系统，可以在具有大于3英寸的直径的硅衬底的整个区域中形成一定尺寸和形状的孔和/或沟槽。
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公开(公告)号：US06565761B1
公开(公告)日：2003-05-20
申请号：US09537713
申请日：2000-03-30
申请人： Peter Kesper
发明人： Peter Kesper
IPC分类号： C25F300
摘要： A process and a device for producing a printing tool in which a mask for sectional chemical passivation is applied to the surface of a workpiece that is to be subjected to a chemical surface working. In accordance with one embodiment, the process for producing a printing tool includes the steps of providing a workpiece having a surface which is subjected to a chemical surface working and spot spraying the surface of the workpiece section-by-section with a mask for sectional chemical passivation where the mask is essentially a wax and is sprayed onto the surface of the workpiece by a plurality of nozzles that are controlled with EDP support.
摘要翻译： 一种用于制造印刷工具的方法和装置，其中将用于分段化学钝化的掩模施加到待进行化学表面加工的工件的表面上。 根据一个实施例，制造印刷工具的方法包括以下步骤：提供具有经受化学表面加工的表面的工件，并用分段化学品的掩模点对工件的表面进行点喷 钝化，其中掩模基本上是蜡，并且通过由EDP支持控制的多个喷嘴喷射到工件的表面上。
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公开(公告)号：US06413407B1
公开(公告)日：2002-07-02
申请号：US09722854
申请日：2000-11-27
IPC分类号： C25F300
摘要： An ECM apparatus includes a fluted cathode tool for being driven through a tubular workpiece for electrochemically forming internal flutes therein. The cathode tool is sealed at one end for isolating electrolyte over the flutes thereof to seal against flow of the electrolyte past the tool and into the finished fluted bore.
摘要翻译： ECM装置包括用于通过管状工件驱动的带槽的阴极工具，用于在其中电化学地形成内部凹槽。 阴极工具在一端密封，用于在其凹槽上隔离电解质，以密封电解液通过工具的流动并进入完成的槽纹孔。
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20.发明授权公开(公告)号：US06398943B1
公开(公告)日：2002-06-04
申请号：US09581692
申请日：2000-06-14
IPC分类号： C25F300
CPC分类号： H01L33/346 , C25F3/12 , H01L21/306 , H01L21/321
摘要： A porous layer produced from silicon, germanium or aluminum by applying a wedge-shaped mask to the surface of the layer and by controlled elecrochemical etching along the mask.
摘要翻译： 通过将楔形掩模施加到该层的表面并沿着该掩模通过受控的电化学蚀刻，由硅，锗或铝制成的多孔层。
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