公开(公告)号：US08810123B2

公开(公告)日：2014-08-19

申请号：US13240627

申请日：2011-09-22

申请人： Takuyoshi Ishimura

发明人： Takuyoshi Ishimura

IPC分类号： H01J1/62

CPC分类号： C09K11/574 ,  C09K11/0822 ,  C09K11/7745 ,  H01L33/0016 ,  H01L33/02 ,  H01L33/08 ,  H01L33/502

摘要： An inorganic electroluminescence device has a structure including a phosphor layer sandwiched between a first electrode and a second electrode; and a semiconductor structure in which N-type semiconductors and a P-type semiconductor, made of inorganic semiconductor materials, are joined to form an NPN type structure. The phosphor is made of an inorganic substance. The first electrode is to be a cathode and is formed on an insulating glass substrate. The second electrode is to be an anode and is disposed opposite the first electrode. The semiconductor structure is disposed between the cathode that is the first electrode and the phosphor layer.

摘要翻译： 无机电致发光器件具有包括夹在第一电极和第二电极之间的荧光体层的结构; 并且其中N型半导体和由无机半导体材料制成的P型半导体连接以形成NPN型结构的半导体结构。 荧光体由无机物质制成。 第一电极为阴极，并形成在绝缘玻璃基板上。 第二电极为阳极，与第一电极相对设置。 半导体结构设置在作为第一电极的阴极和荧光体层之间。

公开(公告)号：US20130214303A1

公开(公告)日：2013-08-22

申请号：US13841513

申请日：2013-03-15

申请人： Fuji Xerox Co., Ltd.

发明人： Taku KINOSHITA ,  Takashi KONDO ,  Kazutaka TAKEDA ,  Hideo NAKAYAMA

IPC分类号： H01L33/14

CPC分类号： H01L33/14 ,  B41J2/45 ,  G03G15/04054 ,  H01L33/0016 ,  H01L33/145

摘要： A light emitting element includes a semiconductor substrate, and an island structure formed on the semiconductor substrate. The island structure includes a light-emitting-unit thyristor and a current confinement structure. The light-emitting-unit thyristor includes stacked semiconductor layers having a pnpn structure. The current confinement structure includes a high-resistance region and a conductive region, and confines carriers in the conductive region.

摘要翻译： 发光元件包括半导体衬底和形成在半导体衬底上的岛状结构。 岛结构包括发光单元晶闸管和电流限制结构。 发光单元晶闸管包括具有pnpn结构的堆叠半导体层。 电流限制结构包括高电阻区域和导电区域，并且在导电区域中限制载流子。

公开(公告)号：US20130049027A1

公开(公告)日：2013-02-28

申请号：US13403711

申请日：2012-02-23

申请人： Taku KINOSHITA ,  Takashi KONDO ,  Kazutaka TAKEDA ,  Hideo NAKAYAMA

发明人： Taku KINOSHITA ,  Takashi KONDO ,  Kazutaka TAKEDA ,  Hideo NAKAYAMA

IPC分类号： H01L27/15 ,  H01L33/14

CPC分类号： G03G15/04054 ,  B41J2/45 ,  H01L33/0016 ,  H01L33/145

摘要： A light emitting element includes a semiconductor substrate, and an island structure formed on the semiconductor substrate. The island structure includes a light-emitting-unit thyristor and a current confinement structure. The light-emitting-unit thyristor includes stacked semiconductor layers having a pnpn structure. The current confinement structure includes a high-resistance region and a conductive region, and confines carriers in the conductive region.

公开(公告)号：US20110285805A1

公开(公告)日：2011-11-24

申请号：US13112058

申请日：2011-05-20

申请人： Akira Nagumo

发明人： Akira Nagumo

IPC分类号： B41J2/435 ,  H05B37/02

CPC分类号： B41J2/45 ,  G03G15/04036 ,  G03G15/043 ,  H01L33/0004 ,  H01L33/0016

摘要： A driving device controls light emitting thyristors that each include a scanning circuit sequentially driving each of the plural stages of the light emitting thyristors by controlling scanning thyristors. Herein, terminals of each odd numbered stage of the scanning thyristors is commonly connected to a first clock terminal, and terminals of each even numbered stage of the scanning thyristors is commonly connected to a second clock terminal. A control terminal of a first stage scanning thyristor is connected to the second clock terminal, and another control terminal of a previous scanning thyristor is connected to the second control terminal of a subsequent scanning thyristor.

摘要翻译： 驱动装置控制发光晶闸管，每个发光晶闸管包括通过控制扫描晶闸管顺序驱动多级发光晶闸管中的每一个的扫描电路。 这里，扫描晶闸管的每个奇数级的端子共同连接到第一时钟端子，并且扫描晶闸管的每个偶数级的端子共同连接到第二时钟端子。 第一级扫描晶闸管的控制端子连接到第二时钟端子，并且先前的扫描晶闸管的另一个控制端子连接到随后的扫描晶闸管的第二控制端子。

公开(公告)号：US20110234743A1

公开(公告)日：2011-09-29

申请号：US13070006

申请日：2011-03-23

申请人： Akira NAGUMO

发明人： Akira NAGUMO

IPC分类号： B41J2/435 ,  G01D15/14

CPC分类号： B41J2/435 ,  G06K15/1238 ,  H01L25/0753 ,  H01L33/0016 ,  H01L2224/48091 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： A drive device to drive a plurality of three-terminal light emitting elements includes a drive circuit. The drive circuit includes a first and second conductive type MOS transistor complementarily connected to each other and configured to drive three-terminal light emitting elements that are in conduction state based on a received drive signal. The first conductive type MOS transistor is formed in a substrate region and includes a channel formation region, which is a region wherein a channel is to be formed. An impurity with the same polarity as that of the substrate region is injected in the channel formation region.

摘要翻译： 驱动多个三端子发光元件的驱动装置包括驱动电路。 驱动电路包括彼此互补连接的第一和第二导电型MOS晶体管，并且被配置为基于接收的驱动信号来驱动处于导通状态的三端子发光元件。 第一导电型MOS晶体管形成在衬底区域中，并且包括作为要形成沟道的区域的沟道形成区域。 在沟道形成区域中注入与衬底区域具有相同极性的杂质。

公开(公告)号：US20110204376A1

公开(公告)日：2011-08-25

申请号：US12871617

申请日：2010-08-30

申请人： Jie Su ,  David Bour

发明人： Jie Su ,  David Bour

IPC分类号： H01L33/30 ,  H01L21/20

CPC分类号： H01L25/0756 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L27/156 ,  H01L33/0016 ,  H01L33/007 ,  H01L33/08 ,  H01L2224/48137 ,  H01L2924/0002

摘要： Apparatus and method for growth of non-p-type GaN layers over p-type GaN layers. Embodiments include multi-junction LED film stacks, multi-junction LED devices paired into units and multi-junction LED arrays of the paired units. Epitaxial growths of p-type and non-p-type material layers are split between epitaxial chambers clustered onto a single platform to reduce p-type dopant cross-contamination. Arrayed multi-junction LED devices provide improved packing density and reduced blinking during AC operation.

摘要翻译： 在p型GaN层上生长非p型GaN层的装置和方法。 实施例包括配对单元的多结LED膜堆叠，多结LED器件和成对单元的多结LED阵列。 将p型和非p型材料层的外延生长分为在单个平台上聚集的外延室之间以减少p型掺杂剂交叉污染。 阵列多结LED器件在交流运行期间提供改进的封装密度和减少的闪烁。

公开(公告)号：US20110031893A1

公开(公告)日：2011-02-10

申请号：US12863743

申请日：2009-01-21

申请人： Lukas Willem Snyman ,  Monuko Du Plessis

发明人： Lukas Willem Snyman ,  Monuko Du Plessis

IPC分类号： H05B41/36 ,  H01L33/14

CPC分类号： H01L33/0016 ,  H01L33/34

摘要： A light emitting device (10) comprises a body (12) of a semiconductor material. A first junction region (14) is formed in the body between a first region (12.1) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction region (16) is formed in the body between the second region (12.2) of the body and a third region (12.3) of the body of the first doping kind. A terminal arrangement (18) is connected to the body for, in use, reverse biasing the first junction region (14) into a breakdown mode and for forward biasing at least part (16.1) of the second junction region (16), to inject carriers towards the first junction region (14). The device (10) is configured so that a first depletion region (20) associated with the reverse biased first junction region (14) punches through to a second depletion region associated with the forward biased second junction region (16).

摘要翻译： 发光器件（10）包括半导体材料的主体（12）。 第一接合区域（14）在第一掺杂类型的主体的第一区域（12.1）和第二掺杂类型的主体的第二区域（12.2）之间的主体中形成。 在本体的第二区域（12.2）和第一掺杂类型的主体的第三区域（12.3）之间的主体中形成第二接合区域（16）。 端子装置（18）连接到主体，用于在使用时将第一接合区域（14）反向偏置成击穿模式并且用于向第二接合区域（16）的至少一部分（16.1）进行偏置，以便将其注入 载体朝向第一接合区域（14）。 器件（10）被配置为使得与反向偏置的第一接合区域（14）相关联的第一耗尽区域（20）穿过与正向偏置的第二接合区域（16）相关联的第二耗尽区域。

公开(公告)号：US20100272140A1

公开(公告)日：2010-10-28

申请号：US12799083

申请日：2010-04-16

申请人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR. ,  Han Wui Then ,  Chao-Hsin Wu

发明人： Gabriel Walter ,  Milton Feng ,  Nick Holonyak, JR. ,  Han Wui Then ,  Chao-Hsin Wu

IPC分类号： H01S5/042 ,  H05B41/24

CPC分类号： H01S5/06203 ,  B82Y20/00 ,  H01L33/0016 ,  H01L33/30 ,  H01L33/38 ,  H01S5/06213 ,  H01S5/183 ,  H01S5/1835 ,  H01S5/34313

摘要： A method for producing a high frequency optical signal component representative of a high frequency electrical input signal component, includes the following steps: providing a semiconductor transistor structure that includes a base region of a first semiconductor type between semiconductor emitter and collector regions of a second semiconductor type; providing, in the base region, at least one region exhibiting quantum size effects; providing emitter, base, and collector electrodes respectively coupled with the emitter, base, and collector regions; applying electrical signals, including the high frequency electrical signal component, with respect to the emitter, base, and collector electrodes to produce output spontaneous light emission from the base region, aided by the quantum size region, the output spontaneous light emission including the high frequency optical signal component representative of the high frequency electrical signal component; providing an optical cavity for the light emission in the region between the base and emitter electrodes; and scaling the lateral dimensions of the optical cavity to control the speed of light emission response to the high frequency electrical signal component.

摘要翻译： 一种表示高频电输入信号分量的高频光信号分量的制造方法包括以下步骤：提供半导体晶体管结构，该半导体晶体管结构包括半导体类型的基极区域，在第二半导体的半导体发射极和集电极区域之间 类型; 在碱性区域中提供至少一个呈现量子效应的区域; 提供分别与发射极，基极和集电极区耦合的发射极，基极和集电极电极; 对发射极，基极和集电极施加包括高频电信号分量在内的电信号，以在量子尺寸区域辅助的基极区域产生输出自发光发射，包括高频率的输出自发光发射 光信号分量代表高频电信号分量; 在基极和发射极之间的区域中提供用于发光的光学腔; 以及缩放光腔的横向尺寸以控制对高频电信号分量的发光响应的速度。

公开(公告)号：US07286583B2

公开(公告)日：2007-10-23

申请号：US11068561

申请日：2005-02-28

申请人： Milton Feng ,  Nick Holonyak, Jr. ,  Richard Chan ,  Gabriel Walter

发明人： Milton Feng ,  Nick Holonyak, Jr. ,  Richard Chan ,  Gabriel Walter

IPC分类号： H01S3/13

CPC分类号： H01L33/0016 ,  B82Y20/00 ,  H01L33/08 ,  H01S5/0422 ,  H01S5/0618 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/06812 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/34313

摘要： A method for producing controllable light pulses includes the following steps: providing a heterojunction bipolar transistor structure including collector, base, and emitter regions of semiconductor materials; providing an optical resonant cavity enclosing at least a portion of the transistor structure; and coupling electrical signals with respect to the collector, base, and emitter regions, to switch back and forth between a stimulated emission mode that produces output laser pulses and a spontaneous emission mode. In a form of the method, the electrical signals include an AC excitation signal, and part of each excitation signal cycle is operative to produce stimulated emission, and another part of each excitation signal cycle is operative to produce spontaneous emission.

摘要翻译： 一种制造可控光脉冲的方法包括以下步骤：提供包括半导体材料的集电极，基极和发射极区域的异质结双极晶体管结构; 提供封闭所述晶体管结构的至少一部分的光学谐振腔; 并且相对于集电极，基极和发射极区域耦合电信号，以在产生输出激光脉冲的受激发射模式和自发发射模式之间来回切换。 以该方法的形式，电信号包括AC激励信号，并且每个激励信号周期的一部分可操作以产生受激发射，并且每个激励信号周期的另一部分可操作以产生自发发射。

公开(公告)号：US20070194330A1

公开(公告)日：2007-08-23

申请号：US11362472

申请日：2006-02-23

申请人： James Ibbetson ,  Bernd Keller ,  Umesh Mishra

发明人： James Ibbetson ,  Bernd Keller ,  Umesh Mishra

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  H01L33/0016 ,  H01L33/08 ,  H01L33/32

摘要： An LED made from a wide band gap semiconductor material and having a low resistance p-type confinement layer with a tunnel junction in a wide band gap semiconductor device is disclosed. A dissimilar material is placed at the tunnel junction where the material generates a natural dipole. This natural dipole is used to form a junction having a tunnel width that is smaller than such a width would be without the dissimilar material. A low resistance p-type confinement layer having a tunnel junction in a wide band gap semiconductor device may be fabricated by generating a polarization charge in the junction of the confinement layer, and forming a tunnel width in the junction that is smaller than the width would be without the polarization charge. Tunneling through the tunnel junction in the confinement layer may be enhanced by the addition of impurities within the junction. These impurities may form band gap states in the junction.

摘要翻译： 公开了一种由宽带隙半导体材料制成的LED，并具有在宽带隙半导体器件中具有隧道结的低电阻p型约束层。 不同的材料放置在材料产生天然偶极子的隧道结处。 该天然偶极子用于形成隧道宽度小于不具有不同材料的宽度的接合点。 在宽带隙半导体器件中具有隧道结的低电阻p型限制层可以通过在限制层的接合处产生极化电荷并在接合部中形成小于宽度的隧道宽度来制造 没有极化电荷。 可以通过在连接处添加杂质来增强通过限制层中的隧道结的隧穿。 这些杂质可能在结中形成带隙状态。