公开(公告)号：US20240128057A1

公开(公告)日：2024-04-18

申请号：US18398213

申请日：2023-12-28

Applicant: Tokyo Electron Limited

Inventor： Kazuki MOYAMA ,  Nobuyuki NAGAYAMA ,  Mamoru MIURA

IPC: H01J37/32

CPC classification number: H01J37/32477 ,  H01J37/32715 ,  H01J37/32807

Abstract: A consumable member includes a core portion formed of the material having a first purity; and a protection portion provided at a portion worn out by plasma in the plasma processing apparatus around the core portion, and formed of the material having a second purity higher than the first purity. The material may be either quartz or ceramic.

公开(公告)号：US20210269258A1

公开(公告)日：2021-09-02

申请号：US17186932

申请日：2021-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI ,  Toshiya MATSUDA

IPC: B65G47/90 ,  B23P6/00

Abstract: A method includes estimating a replacement time of a consumable part of a processing device, specifying a timing after substrate processing of the processing device is completed in a period before the replacement time as a replaceable timing of the consumable part, estimating a movement time period required for the part transporting device to move to a position of the processing device requiring the replacement, and estimating a preparation time period required for preparation until the part transporting device moved to the position of the processing device requiring the replacement becomes a state in which the consumable part is replaceable. The method further includes transmitting a replacement instruction to the part transporting device at a timing before a timing that is earlier than the replaceable timing by a total time of the movement time period and the preparation time period, and instructing the replacement of the consumable part.

公开(公告)号：US20210050240A1

公开(公告)日：2021-02-18

申请号：US16942926

申请日：2020-07-30

Applicant: Tokyo Electron Limited

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI

IPC: H01L21/677 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

Abstract: A semiconductor substrate is transferred accurately with respect to an edge ring. A transfer apparatus uses a transfer method for a substrate processing system, where the method includes tray loading, measuring, positioning, substrate placement, and tray removing. The tray loading includes loading a tray on which a semiconductor substrate and an edge ring are placeable into a mounting chamber including a support. The measurement includes measuring a position of the edge ring placed on the tray and obtaining position information about the edge ring. The positioning includes positioning the semiconductor substrate based on the position information. The substrate placement includes placing the positioned semiconductor substrate onto the tray. The tray removing includes removing the tray on which the semiconductor substrate and the edge ring are placed from the mounting chamber.

公开(公告)号：US20200312623A1

公开(公告)日：2020-10-01

申请号：US16834612

申请日：2020-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI ,  Shinji HIMORI ,  Michishige SAITO ,  Gen TAMAMUSHI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/67 ,  C23C16/455

Abstract: A substrate processing apparatus includes a processing chamber that accommodates a substrate, a gas supply having a gas diffusion chamber and a plurality of gas holes that communicates the gas diffusion chamber with the processing chamber, a gas inlet tube that introduces a gas into the gas diffusion chamber of the gas supply, and a gas source connected to the gas inlet tube and supplies the gas to the gas inlet tube. The gas supply has a volume variable device for changing a volume in the gas diffusion chamber.

公开(公告)号：US20130062199A1

公开(公告)日：2013-03-14

申请号：US13669546

申请日：2012-11-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA

IPC: C23C14/34

CPC classification number: H01L51/5092 ,  C23C14/12 ,  C23C14/20 ,  C23C14/34 ,  C23C14/548 ,  H01L51/5221 ,  H01L51/5253 ,  H01L51/56 ,  H05B33/10

Abstract: A material having a low work function is quickly inserted near an interface between an organic layer and a cathode. A sputtering apparatus (Sp) includes a target material formed of silver (Ag), a dispenser formed outside a processing container and evaporating cesium (Cs) having a lower work function than silver (Ag) by heating the cesium (Cs), a first gas supply pipe communicating with the dispenser to transfer steam of the evaporated cesium (Cs) to the processing container by using argon gas as a carrier gas, and a high frequency power supply source supplying high frequency power to the processing container. A controller generates plasma by exciting the argon gas by using energy of the high frequency power, and while forming a metal electrode by using an silver (Ag) atom, wherein the Ag atom is generated from a the target material by using the generated plasma, controls a ratio of the cesium (Cs) mixed with the metal electrode.

Abstract translation: 具有低功函数的材料快速插入有机层和阴极之间的界面附近。 溅射装置（Sp）包括由银（Ag）形成的靶材料，在处理容器外部形成的分配器，并通过加热铯（Cs）蒸发具有比银（Ag）功函数低的铯（Cs），第一 气体供给管与分配器连通，通过使用氩气作为载气将蒸发的铯（Cs）的蒸汽转移到处理容器，以及向处理容器提供高频功率的高频电源。 控制器通过使用高频功率的能量激发氩气来产生等离子体，并且通过使用银（Ag）原子形成金属电极，其中通过使用所产生的等离子体从目标材料产生Ag原子， 控制与金属电极混合的铯（Cs）的比例。

公开(公告)号：US20240213000A1

公开(公告)日：2024-06-27

申请号：US18421988

申请日：2024-01-25

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Shinji HIMORI ,  Masanobu HONDA ,  Satoru TERUUCHI

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32724 ,  H01J37/3244 ,  H01L21/6833 ,  H01J2237/2065

Abstract: A processing method for performing plasma processing on a substrate includes placing a temperature adjustment target onto a support surface of a substrate support in a decompressible processing, forming a heat transfer layer by supplying, through the substrate support, a heat transfer medium including at least one of a liquid medium or a solid medium with fluidity to between the support surface of the substrate support and a back surface of the temperature adjustment target, performing plasma processing on the substrate on the support surface on which the heat transfer layer is formed, and separating the temperature adjustment target from the support surface after the plasma processing.

公开(公告)号：US20210268670A1

公开(公告)日：2021-09-02

申请号：US17186857

申请日：2021-02-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI ,  Toshiya MATSUDA

IPC: B25J21/00 ,  B25J19/00 ,  B25J5/00

Abstract: A part transporting device for transporting a consumable part includes a part housing, a container, a robot arm, and a moving mechanism. The part housing accommodates an unused consumable part and a used consumable part. The container has an opening to be connected to a processing device and a gate valve for opening or closing the opening, the container being configured to accommodate the part housing. The robot arm is provided in the container and has at least one end effector at a tip end thereof, the robot arm transferring the used consumable part from the processing device through the opening to accommodate the used consumable part in the part housing and transferring the unused consumable part from the part housing to load the unused consumable part into the processing device through the opening. The moving mechanism has a power source and is configured to move the part transporting device.

公开(公告)号：US20200373166A1

公开(公告)日：2020-11-26

申请号：US16881073

申请日：2020-05-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki MOYAMA ,  Kazuya NAGASEKI

IPC: H01L21/3065

Abstract: A substrate processing method includes a first expanding step, a first gas supplying step, a first plasma processing step, and a first power stopping step. The first expanding step increases the volume of a gas diffusion chamber. The first gas supplying step supplies a first gas into the gas diffusion chamber. The first plasma processing step supplies radio-frequency power from a radio-frequency power supply to generate plasma in a processing chamber accommodating a substrate and reduces the volume of the gas diffusion chamber. The first power stopping step stops the supply of the radio-frequency power after the first plasma processing step.

公开(公告)号：US20190172689A1

公开(公告)日：2019-06-06

申请号：US16205558

申请日：2018-11-30

Applicant: Tokyo Electron Limited

Inventor： Kazuya NAGASEKI ,  Kazuki MOYAMA ,  Toshiya MATSUDA ,  Naokazu FURUYA ,  Tatsuro OHSHITA

IPC: H01J37/32 ,  H01L21/673 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52

Abstract: An exhaust device including an exhaust mechanism and an exhaust unit is provided. The exhaust mechanism includes a first blade unit and a second blade unit provided in an exhaust space of a processing vessel including a processing space of a vacuum atmosphere for applying a process to a workpiece. The first blade unit and the second blade unit are arranged coaxially with a periphery of the workpiece, and at least one of the first blade unit and the second blade unit is rotatable. The exhaust unit is provided at a downstream side of the exhaust mechanism and communicates with the exhaust space. The exhaust unit is configured to exhaust gas in the processing vessel.

公开(公告)号：US20180286740A1

公开(公告)日：2018-10-04

申请号：US15966506

申请日：2018-04-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wataru YOSHIKAWA ,  Kazuki MOYAMA ,  Nobuyuki OKAYAMA ,  Kenji SUDOU ,  Yasuhiro OTSUKA

IPC: H01L21/687 ,  C04B37/02

Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.