公开(公告)号：US20210013015A1

公开(公告)日：2021-01-14

申请号：US17030522

申请日：2020-09-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya NAGASEKI ,  Shinji HIMORI ,  Mitsunori OHATA

IPC: H01J37/32 ,  H01L21/67

Abstract: An apparatus includes a plasma processing container; a workpiece placement table disposed in the plasma processing container; a dielectric member having a facing surface that faces the workpiece placement table; an antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the plasma processing container via the dielectric member; an electromagnet group disposed along an outer circumference of the plasma processing container and configured to form a magnetic field in the plasma processing container; and a controller configured to control magnitudes of electric currents flowing through respective electromagnets of the electromagnet group differently from each other, to generate a magnetic gradient along a circumferential direction in the magnetic field that exists only in an outer circumferential space in the plasma processing container.

公开(公告)号：US20180114717A1

公开(公告)日：2018-04-26

申请号：US15850875

申请日：2017-12-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji HIMORI ,  Yoshiyuki KOBAYASHI ,  Takehiro KATO ,  Etsuji ITO

IPC: H01L21/687 ,  H01L21/67 ,  H01L21/306

Abstract: A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.

公开(公告)号：US20170162367A1

公开(公告)日：2017-06-08

申请号：US15378590

申请日：2016-12-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro YOKOTA ,  Etsuji ITO ,  Shinji HIMORI

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/768 ,  H01L21/67

Abstract: A substrate processing method performed by a substrate processing apparatus is provided. The substrate processing method comprises: setting a magnetic pole on a processing space side of each electromagnet belonging to one of first, second and third electromagnet groups to be different from a magnetic pole on the processing space side of each electromagnet belonging to the other two electromagnet groups; generating an electric field by applying a high frequency power to a lower electrode; and performing a first process on the substrate with plasma generated by the electric field.

公开(公告)号：US20150332898A1

公开(公告)日：2015-11-19

申请号：US14699256

申请日：2015-04-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro YOKOTA ,  Shinji HIMORI ,  Tatsuro OHSHITA ,  Shu KUSANO

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/50

CPC classification number: H01J37/32669 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32339 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3266

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target substrate by applying plasma of a processing gas on the processing target substrate. The plasma processing apparatus includes: a processing container configured to accommodate the processing target substrate; a lower electrode disposed in the processing container to mount the processing target substrate thereon; an upper electrode disposed in the processing container to face the lower electrode with a processing space being interposed therebetween; a high frequency power source configured to apply a high frequency power between the upper electrode and the lower electrode; a main magnet unit including one or more annular main electromagnetic coils arranged around a central axis; and an auxiliary magnet unit configured to form a magnetic field that perpendicularly or obliquely crosses the central axis in the processing space.

Abstract translation: 提供了一种等离子体处理装置，其通过在处理对象基板上施加处理气体的等离子体，对处理对象基板进行处理。 等离子体处理装置包括：处理容器，被配置为容纳处理目标基板; 设置在处理容器中的下电极，用于将处理目标基板安装在其上; 设置在所述处理容器中以与所述下电极相对的上电极，其间插入有处理空间; 高频电源，被配置为在所述上电极和所述下电极之间施加高频电力; 主磁体单元，其包括围绕中心轴布置的一个或多个环形主电磁线圈; 以及辅助磁体单元，被配置为形成在处理空间中垂直或倾斜地穿过中心轴线的磁场。

公开(公告)号：US20130220547A1

公开(公告)日：2013-08-29

申请号：US13767195

申请日：2013-02-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya NAGASEKI ,  Etsuji ITO ,  Akihiro YOKOTA ,  Shinji HIMORI ,  Shoichiro MATSUYAMA

IPC: H01L21/465

CPC classification number: H01L21/465 ,  C23C14/35 ,  C23C14/351 ,  C23C14/352 ,  H01J37/32091 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32688 ,  H01J37/345 ,  H01J37/3452 ,  H01L21/32136

Abstract: A substrate processing apparatus generates an electric field in a processing space between a lower electrode to which a high frequency power is supplied and an upper electrode facing the lower electrode and performs plasma processing on a substrate mounted on the lower electrode by using a plasma generated by the electric field. Distribution of a plasma density in the processing space is controlled by a magnetic field generated by controlling a plurality of electromagnets provided at a top surface of the upper electrode which is provided to be opposite to the processing space.

Abstract translation: 基板处理装置在供给高频电力的下电极与面向下电极的上电极之间的处理空间中产生电场，通过使用由下述电极产生的等离子体，对安装在下电极上的基板进行等离子体处理 电场。 处理空间中的等离子体密度的分布由通过控制设置在与处理空间相对的上电极的顶表面处设置的多个电磁体而产生的磁场来控制。

公开(公告)号：US20240068921A1

公开(公告)日：2024-02-29

申请号：US18505066

申请日：2023-11-08

Applicant: Tokyo Electron Limited

Inventor： Satoru TERUUCHI ,  Jun HIROSE ,  Kazuya NAGASEKI ,  Shinji HIMORI

IPC: G01N15/02

CPC classification number: G01N15/0227 ,  G01N15/0211 ,  G01N2015/1087

Abstract: A particle monitoring system includes a light emitting device for irradiating an inside of a plasma processing apparatus with light, and a monitoring device to be placed on a stage in the plasma processing apparatus. The monitoring device includes a base substrate, a plurality of imaging devices, and a control device. The base substrate has a plate shape. The plurality of imaging devices have optical axes facing upward on the base substrate, and are disposed apart from each other to capture images including scattered light from the particle irradiated with the light. The control device discriminates the particle in the images captured by the plurality of imaging devices.

公开(公告)号：US20190333741A1

公开(公告)日：2019-10-31

申请号：US16396109

申请日：2019-04-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi NAGAMI ,  Tatsuro OHSHITA ,  Kazuya NAGASEKI ,  Shinji HIMORI

IPC: H01J37/32

Abstract: A plasma processing method includes providing a plasma processing apparatus; supplying radio-frequency waves from a radio-frequency power supply; and applying a negative DC voltage to a lower electrode from the at least one DC power supply. In the applying the DC voltage, the DC voltage is cyclically applied to the lower electrode, and in a state where a frequency defining each cycle in which the DC voltage is applied to the lower electrode is set to be lower than 1 MHz, a ratio occupied by a period during which the DC voltage is applied to the lower electrode in the each cycle is regulated.

公开(公告)号：US20180174806A1

公开(公告)日：2018-06-21

申请号：US15840636

申请日：2017-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuya NAGASEKI ,  Shinji HIMORI ,  Mitsunori OHATA

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32669 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32688 ,  H01J37/32715 ,  H01L21/67069

Abstract: Disclosed is a plasma processing apparatus including: a processing container; a placing table provided in the processing container and configured to place a workpiece thereon; a dielectric member having a facing surface that faces the placing table; a planar antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the processing container via the dielectric member; and an electromagnet group disposed along an outer circumference of the processing container and configured to form a magnetic field for moving ions in plasma based on the induced electric field along the facing surface of the dielectric member in the processing container.

公开(公告)号：US20170103877A1

公开(公告)日：2017-04-13

申请号：US15288205

申请日：2016-10-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akihiro YOKOTA ,  Shinji HIMORI ,  Tatsuro OHSHITA ,  Shu KUSANO ,  Etsuji ITO ,  Kazuya NAGASEKI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32669 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/67069

Abstract: Disclosed is a plasma etching method which is performed using a plasma processing apparatus that is a capacitively coupled plasma processing apparatus, and includes: a processing container; a gas supply unit that supply an etching processing gas into the processing container; a placing table including a lower electrode; an upper electrode provided above the placing table; and a plurality of electromagnets including a plurality of coils, or a plurality of electromagnets each including a coil, on the upper electrode. The plasma etching method includes generating plasma of the processing gas to perform a plasma etching on a single film of a workpiece placed on the placing table; and controlling a current supplied to the plurality of electromagnet to change a distribution of an etching rate of the single film in the diametric direction with respect to the central axis during the generating of the plasma of the processing gas.

公开(公告)号：US20150221478A1

公开(公告)日：2015-08-06

申请号：US14688205

申请日：2015-04-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji HIMORI ,  Tatsuo Matsudo

IPC: H01J37/32

CPC classification number: H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32568

Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.

Abstract translation: 电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。 在腔室中，第一电极和第二电极相对设置。 第二电极包括彼此分离并面向第一电极的多个导电段。 RF电源被配置为向第一电极施加RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以便通过RF电场将处理气体转化成等离子体。 DC电源被配置为向第二电极的至少一个段施加DC电压。