公开(公告)号：US20180286740A1

公开(公告)日：2018-10-04

申请号：US15966506

申请日：2018-04-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Wataru YOSHIKAWA ,  Kazuki MOYAMA ,  Nobuyuki OKAYAMA ,  Kenji SUDOU ,  Yasuhiro OTSUKA

IPC: H01L21/687 ,  C04B37/02

Abstract: A manufacturing method of sample table is provided. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and the manufacturing method includes: preparing an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and preparing a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion.