公开(公告)号：US09425021B2

公开(公告)日：2016-08-23

申请号：US14241817

申请日：2012-08-29

申请人： Miki Tamura ,  Tamayo Hiroki ,  Shigeki Matsutani ,  Takao Ogura ,  Kazuyuki Ueda ,  Yoshihiro Yanagisawa ,  Ichiro Nomura

发明人： Miki Tamura ,  Tamayo Hiroki ,  Shigeki Matsutani ,  Takao Ogura ,  Kazuyuki Ueda ,  Yoshihiro Yanagisawa ,  Ichiro Nomura

IPC分类号： H01J35/08 ,  H01J35/14 ,  H01J35/16 ,  G01N23/04 ,  H05G1/70

CPC分类号： H01J35/08 ,  G01N23/04 ,  H01J35/14 ,  H01J35/16 ,  H01J2235/087 ,  H01J2235/168 ,  H01J2235/186 ,  H05G1/70

摘要： In an X-ray generation apparatus of transmission type including an electron emission source, and a target generating an X-ray with collision of electrons emitted from the electron emission source against the target, the X-ray generation apparatus further includes a secondary X-ray generation portion generating an X-ray with collision of electrons reflected by the target against the secondary X-ray generation portion, and the secondary X-ray generation portion and the target are arranged such that the X-ray generated with the direct collision of the electrons against the target and the X-ray generated with the collision of the electrons reflected by the target against the secondary X-ray generation portion are both radiated to an outside. X-ray generation efficiency is increased by effectively utilizing the electrons reflected by the target.

摘要翻译： 在包括电子发射源的透射型的X射线产生装置和产生从电子发射源发射的电子与靶相撞的X射线的靶上，X射线产生装置还包括二次X射线 射线产生部分，产生与目标反射的电子相对于次X射线产生部分的碰撞的X射线，并且次X射线产生部分和靶部被布置成使得由直接碰撞产生的X射线 靠着目标物的电子以及由靶子反射的二次X射线产生部分的碰撞产生的X射线都被辐射到外部。 通过有效地利用目标反射的电子来提高X射线产生效率。

公开(公告)号：US06306001B1

公开(公告)日：2001-10-23

申请号：US09301159

申请日：1999-04-28

申请人： Tamayo Hiroki

发明人： Tamayo Hiroki

IPC分类号： H01J902

CPC分类号： H01J9/027

摘要： An electron-emitting device is provided with stable electron emission characteristics and with uniformity of electron emission. The present invention thus provides a method for producing an electron-emitting device having a pair of device electrodes opposed to each other and a thin film including an electron-emitting region, formed on a substrate, wherein a voltage is applied so that a potential of a front surface of the substrate becomes higher than a potential of the back surface thereof. On that occasion, the strength of the electric field is not more than 20 kV/cm between the front surface and the back surface of the substrate. The substrate is heated during the application of the voltage.

摘要翻译： 电子发射器件具有稳定的电子发射特性和电子发射的均匀性。 因此，本发明提供了一种制造电子发射器件的方法，该电子发射器件具有彼此相对的一对器件电极和形成在衬底上的包含电子发射区的薄膜，其中施加电压使得 基板的前表面比其后表面的电位高。 在这种情况下，基板的表面和背面之间的电场强度不超过20kV / cm。 在施加电压期间，衬底被加热。

公开(公告)号：US5841799A

公开(公告)日：1998-11-24

申请号：US570654

申请日：1995-12-11

申请人： Tamayo Hiroki

发明人： Tamayo Hiroki

IPC分类号： H01S5/062 ,  H01S5/0625 ,  H01S5/12 ,  H01S5/34 ,  H01S3/10

CPC分类号： B82Y20/00 ,  H01S5/0625 ,  H01S5/06236 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/3404

摘要： A semiconductor laser of the present invention includes a semiconductor laser structure having a waveguide extending along a resonance direction, an active layer provided at least partly in the waveguide, and a control unit for controlling the excited state of the semiconductor laser structure to change the relationship between wavelengths or propagation constants and threshold gains for transverse electric (TE) mode and transverse magnetic (TM) mode of the laser structure. The waveguide is designed such that threshold gains for the TE mode and the TM mode can be alternately made minimum under the control of the control unit.

摘要翻译： 本发明的半导体激光器包括具有沿着谐振方向延伸的波导的半导体激光器结构，至少部分地设置在波导中的有源层，以及用于控制半导体激光器结构的激发状态以改变关系的控制单元 在激光结构的横向电（TE）模式和横向磁（TM）模式之间的波长或传播常数和阈值增益之间。 波导被设计成使得在控制单元的控制下，TE模式和TM模式的阈值增益可以交替地最小化。

公开(公告)号：US5196717A

公开(公告)日：1993-03-23

申请号：US807622

申请日：1991-12-13

申请人： Tamayo Hiroki ,  Hidetoshi Nojiri

发明人： Tamayo Hiroki ,  Hidetoshi Nojiri

IPC分类号： H01L31/0352 ,  H01L31/112

CPC分类号： B82Y20/00 ,  H01L31/035236 ,  H01L31/1123

摘要： A field effect type photo-detector comprises a semiconductor buffer layer arranged on a substrate. A semiconductor activation layer is arranged on that buffer layer, and a source electrode, a drain electrode and a gate electrode are arranged on the activation layer. A depletion layer for controlling a current flow between the source electrode and the drain electrode is created in the activation layer by applying a voltage to the gate electrode. When light irradiates the activation layer, the depletion layer changes. The buffer layer has a wider band gap than that of the activation layer and has an energy gap which serves as a barrier to carriers. The buffer layer has a sufficiently wide band gap to prevent the absorption of light having an equal wavelength to that of the light irradiated to the activation layer.

摘要翻译： 场效应型光检测器包括布置在基板上的半导体缓冲层。 在该缓冲层上配置有半导体激活层，在激活层上配置有源电极，漏电极和栅电极。 通过向栅电极施加电压，在激活层中产生用于控制源电极和漏电极之间的电流的耗尽层。 当光照射激活层时，耗尽层发生变化。 缓冲层具有比活化层更宽的带隙，并且具有用作载流子屏障的能隙。 缓冲层具有足够宽的带隙，以防止具有与照射到活化层的光的波长相等的波长的光的吸收。

公开(公告)号：US20140362972A1

公开(公告)日：2014-12-11

申请号：US14241384

申请日：2012-08-08

申请人： Takao Ogura ,  Miki Tamura ,  Tamayo Hiroki

发明人： Takao Ogura ,  Miki Tamura ,  Tamayo Hiroki

IPC分类号： H01J35/08 ,  H05G1/32 ,  G01N23/04

CPC分类号： H01J35/08 ,  G01N23/04 ,  H01J35/116 ,  H01J35/14 ,  H01J35/16 ,  H01J2235/168 ,  H05G1/32

摘要： Provided is an X-ray generator (10) which causes electrons having passed through an electron path (4), formed by an electron path formation member (3) surrounding the periphery of the electron path (4), to be emitted against a target to generate an X-ray, in which: an X-ray generated when the sub X-ray generating portion (5) provided in the electron path (4) is irradiated with the electrons backscatterred off the target is capable of being taken out; a material which constitutes the target and a material which constitutes at least the sub X-ray generating portion (5) of the electron path formation member (3) are the same material of which atomic number is 40 or greater. X-ray generation efficiency can be improved by effectively using the electrons backscatterred off the transmission target.

摘要翻译： 提供一种X射线发生器（10），其使通过电子通路（4）的电子由围绕电子路径（4）周围的电子通路形成部件（3）形成，以抵抗靶 以产生X射线，其中：当设置在电子路径（4）中的副X射线产生部分（5）被从靶上反向散射的电子照射时产生的X射线能够被取出; 构成靶的材料和构成电子通路形成部件（3）的至少子X射线产生部（5）的材料是原子序数为40以上的材料。 通过有效地使用从传输目标反向散射的电子可以提高X射线产生效率。

公开(公告)号：US20140192957A1

公开(公告)日：2014-07-10

申请号：US14241817

申请日：2012-08-29

申请人： Miki Tamura ,  Tamayo Hiroki ,  Shigeki Matsutani ,  Takao Ogura ,  Kazuyuki Ueda ,  Yoshihiro Yanagisawa ,  Ichiro Nomura

发明人： Miki Tamura ,  Tamayo Hiroki ,  Shigeki Matsutani ,  Takao Ogura ,  Kazuyuki Ueda ,  Yoshihiro Yanagisawa ,  Ichiro Nomura

IPC分类号： H01J35/08 ,  G01N23/04 ,  H05G1/70

CPC分类号： H01J35/08 ,  G01N23/04 ,  H01J35/14 ,  H01J35/16 ,  H01J2235/087 ,  H01J2235/168 ,  H01J2235/186 ,  H05G1/70

摘要： In an X-ray generation apparatus of transmission type including an electron emission source, and a target generating an X-ray with collision of electrons emitted from the electron emission source against the target, the X-ray generation apparatus further includes a secondary X-ray generation portion generating an X-ray with collision of electrons reflected by the target against the secondary X-ray generation portion, and the secondary X-ray generation portion and the target are arranged such that the X-ray generated with the direct collision of the electrons against the target and the X-ray generated with the collision of the electrons reflected by the target against the secondary X-ray generation portion are both radiated to an outside. X-ray generation efficiency is increased by effectively utilizing the electrons reflected by the target.

摘要翻译： 在包括电子发射源的透射型的X射线产生装置和产生与电子发射源相对的靶发生碰撞的X射线的靶上，X射线产生装置还包括二次X射线 射线产生部分，产生与目标反射的电子相对于次X射线产生部分的碰撞的X射线，并且次X射线产生部分和靶部被布置成使得由直接碰撞产生的X射线 靠着目标物的电子以及由靶子反射的二次X射线产生部分的碰撞产生的X射线都被辐射到外部。 通过有效地利用目标反射的电子来提高X射线产生效率。

公开(公告)号：US08154188B2

公开(公告)日：2012-04-10

申请号：US12694474

申请日：2010-01-27

申请人： Takanori Suwa ,  Toshihiko Takeda ,  Tamayo Hiroki

发明人： Takanori Suwa ,  Toshihiko Takeda ,  Tamayo Hiroki

IPC分类号： H01J1/304 ,  H01J19/02 ,  H01J19/38

CPC分类号： H01J3/021 ,  H01J1/3046 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2203/0216 ,  H01J2203/0272 ,  H01J2329/0423 ,  H01J2329/4613 ,  H01J2329/4673 ,  H01J2329/4682

摘要： An electron beam apparatus is provided having an electron emitting device which has a simple configuration, exhibits high electron emission efficiency, operates stably, and in which emitted electrons are effectively converged. The electron beam apparatus includes: an insulator having a notch on its surface; a gate positioned on the surface of the insulator; at least one cathode having a protruding portion protruding from an edge of the notch toward the gate, and positioned on the surface of the insulator so that the protruding portion is opposed to the gate; and an anode arranged to be opposed to the protruding portion via the gate, wherein the gate is formed on the surface of the insulator so that at least a part of a region opposed to the cathode is projected outward and recessed portions are provided in which ends of the gate are recessed and interpose the projected region.

摘要翻译： 提供了一种具有电子发射器件的电子束装置，该电子发射器件具有简单的结构，表现出高的电子发射效率，稳定地工作，并且其中发射的电子被有效地收敛。 电子束装置包括：在其表面上具有凹口的绝缘体; 位于绝缘体表面上的门; 至少一个阴极，其具有从所述凹口的边缘向所述栅极突出的突出部分，并且位于所述绝缘体的所述表面上，使得所述突出部分与所述栅极相对; 以及经由所述栅极与所述突出部相对的阳极，其中，所述栅极形成在所述绝缘体的表面上，使得与所述阴极相对的区域的至少一部分向外突出，并且设置有凹部， 的栅极凹进并插入投影区域。

公开(公告)号：US06626718B2

公开(公告)日：2003-09-30

申请号：US09954072

申请日：2001-09-18

申请人： Tamayo Hiroki

发明人： Tamayo Hiroki

IPC分类号： H01J902

CPC分类号： H01J9/027

摘要： A method for manufacturing an electron source includes the steps of covering a substrate provided with a first electrode and a second electrode by a container, introducing a gas composed of a carbon compound into the container, and forming a carbon film by applying a voltage between the first electrode and the second electrode. The relationship 1/(4/Cx−1/Cz)≧Sout≧4Sact−Cin is satisfied, where Cin is the conductance from the gas inlet to the position of the substrate nearest to the gas inlet, Cx is the conductance from the position of the substrate nearest to the gas inlet to the position of the substrate nearest to the gas outlet, Sout is the effective exhaust rate, Sact is the consumption rate of the gas, and Cz is the conductance from the substrate to the gas outlet. An apparatus for manufacturing an electron source and a method for manufacturing an image-forming apparatus are also disclosed.

公开(公告)号：US5298739A

公开(公告)日：1994-03-29

申请号：US886922

申请日：1992-05-22

申请人： Tamayo Hiroki ,  Hidetoshi Nojiri

发明人： Tamayo Hiroki ,  Hidetoshi Nojiri

IPC分类号： H01L31/10 ,  G02B6/12 ,  G02B6/42 ,  H01L31/108 ,  H01L31/112 ,  H01J40/14 ,  H01L27/14

CPC分类号： G02B6/4206 ,  G02B6/12004 ,  H01L31/1085 ,  H01L31/1123 ,  G02B2006/12126

摘要： A light absorbing layer is formed in a photodetector that receives and detects light guided therein. Carriers are generated in the light absorbing layer in response to the guided light. Unwanted carriers likely to be generated in regions other than the light absorbing layer when light is guided into the photodetector are swept out by a carrier sweeping arrangement to improve the time response and light-current characteristics of the photodetector.

摘要翻译： 在接收和检测其中引导的光的光电检测器中形成光吸收层。 响应于导光，在光吸收层中产生载体。 当光被引导到光电检测器中时，可能在除了光吸收层之外的区域中产生的不希望的载体被载体扫描装置扫除，以改善光电检测器的时间响应和光电流特性。