公开(公告)号：US20190384177A1

公开(公告)日：2019-12-19

申请号：US16549461

申请日：2019-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/09 ,  G03F7/095 ,  H01L21/027 ,  G03F7/42 ,  G03F7/38 ,  G03F7/32 ,  G03F7/20 ,  G03F7/16 ,  G03F7/039 ,  G03F7/038

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.

公开(公告)号：US10394123B2

公开(公告)日：2019-08-27

申请号：US15597309

申请日：2017-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/09 ,  H01L21/027 ,  G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/095 ,  G03F7/38 ,  G03F7/20 ,  G03F7/32

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.

公开(公告)号：US12085855B2

公开(公告)日：2024-09-10

申请号：US17220705

申请日：2021-04-01

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Siao-Shan Wang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/027 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  C08L25/08 ,  C08L33/10

CPC classification number: G03F7/027 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/168 ,  G03F7/2004 ,  C08L25/08 ,  C08L33/10

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.

公开(公告)号：US10863630B2

公开(公告)日：2020-12-08

申请号：US16723818

申请日：2019-12-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H05K3/06 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/20 ,  G03F7/40

Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.

公开(公告)号：US20200335349A1

公开(公告)日：2020-10-22

申请号：US16889448

申请日：2020-06-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang LIN

IPC: H01L21/308 ,  H01L21/027 ,  G03F7/40 ,  G03F7/26

Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.

公开(公告)号：US10747114B2

公开(公告)日：2020-08-18

申请号：US16549461

申请日：2019-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  G03F7/09 ,  H01L21/027 ,  G03F7/095 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/32 ,  G03F7/38 ,  G03F7/42 ,  G03F7/11

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.

公开(公告)号：US10672619B2

公开(公告)日：2020-06-02

申请号：US15628355

申请日：2017-06-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  H01L21/308 ,  G03F7/40 ,  G03F7/26

Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate, where the patterned resist layer has a first line width roughness. In various embodiments, the patterned resist layer is coated with a treatment material, where a first portion of the treatment material bonds to surfaces of the patterned resist layer. In some embodiments, a second portion of the treatment material (e.g., not bonded to surfaces of the patterned resist layer) is removed, thereby providing a treated patterned resist layer, where the treated patterned resist layer has a second line width roughness less than the first line width roughness.

公开(公告)号：US20180335700A1

公开(公告)日：2018-11-22

申请号：US16048455

申请日：2018-07-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Ching-Yu Chang

IPC: G03F7/40 ,  G03F7/00 ,  G03F7/30

CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/30 ,  G03F7/405

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming a patterned photoresist on a material layer, applying a first bonding material to a side surface of the patterned photoresist, performing a treatment on the first bonding material to bond the first bonding material to the side surface of the patterned photoresist, wherein the treatment creates a bonding site on the first bonding material configured to bond to a second bonding material, applying the second bonding material to a side surface of the first bonding material, and patterning the material layer by selectively processing a portion of the material layer exposed by the patterned photoresist, the first bonding material, and the second bonding material.

公开(公告)号：US20180335697A1

公开(公告)日：2018-11-22

申请号：US15597309

申请日：2017-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/09 ,  H01L21/027 ,  G03F7/42 ,  G03F7/039 ,  G03F7/038 ,  G03F7/16 ,  G03F7/095 ,  G03F7/38 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/094 ,  G03F7/091 ,  G03F7/095 ,  G03F7/11 ,  H01L21/0274

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.

公开(公告)号：US20180177055A1

公开(公告)日：2018-06-21

申请号：US15621646

申请日：2017-06-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H05K3/06 ,  G03F7/09 ,  H01L21/027 ,  G03F7/00 ,  G03F7/20

Abstract: Provided is a material composition and method that includes forming a patterned resist layer on a substrate. The patterned resist layer has a first pattern width, and the patterned resist layer has a first pattern profile having a first proportion of active sites. In some examples, the patterned resist layer is coated with a treatment material. In some embodiments, the treatment material bonds to surfaces of the patterned resist layer to provide a treated patterned resist layer having a second pattern profile with a second proportion of active sites greater than the first proportion of active sites. By way of example, and as part of the coating the patterned resist layer with the treatment material, a first pattern shrinkage process may be performed, where the treated patterned resist layer has a second pattern width less than a first pattern width.