公开(公告)号：US10032873B2

公开(公告)日：2018-07-24

申请号：US15164824

申请日：2016-05-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Cheng-Chien Li ,  Hsin-Chieh Huang

IPC: H01L29/786 ,  H01L29/36 ,  H01L29/167 ,  H01L29/06 ,  H01L29/78 ,  H01L21/265 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

公开(公告)号：US20250169135A1

公开(公告)日：2025-05-22

申请号：US19027055

申请日：2025-01-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Cheng-Chien Li ,  Hsin-Chieh Huang

IPC: H10D62/60 ,  H01L21/02 ,  H01L21/265 ,  H10D30/01 ,  H10D30/62 ,  H10D30/69 ,  H10D62/10 ,  H10D62/834

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

公开(公告)号：US20210288151A1

公开(公告)日：2021-09-16

申请号：US17329929

申请日：2021-05-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ming Chang ,  Chi-Wen Liu ,  Cheng-Chien Li ,  Hsin-Chieh Huang

IPC: H01L29/36 ,  H01L29/167 ,  H01L29/06 ,  H01L29/78 ,  H01L21/265 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66

Abstract: A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

公开(公告)号：US11056392B2

公开(公告)日：2021-07-06

申请号：US15939304

申请日：2018-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Chien Li ,  Wei-Shuo Ho ,  Huang-Chao Chang ,  Wei-Zhe Jhang

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/088

Abstract: A method for forming a FinFET device is described. The method includes the following steps. A substrate is patterned to form fins. Dummy gate stack is formed on the substrate and over the fins, wherein the dummy gate stack may be formed by the following steps: a dummy layer is formed; a first etching step is performed on the dummy layer with a bromine containing etching gas to form a dummy strip; a second etching step is performed on the dummy strip with a chlorine containing etching gas to form the dummy gate stack. The dummy gate stack is replaced with a gate stack.