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公开(公告)号：US20200280300A1
公开(公告)日：2020-09-03
申请号：US16290873
申请日：2019-03-02
Applicant: Texas Instruments Incorporated
Inventor： Jeronimo Segovia Fernandez , Peter Smeys , Ting-Ta Yen
Abstract: A MEMS resonator is operated at its parallel resonance frequency. An acoustic wave is propagated laterally away from a central region of the MEMS resonator through a piezoelectric layer of the MEMS resonator. The propagating acoustic wave is attenuated with concentric confiners that surround and are spaced apart from a perimeter of an electrode that forms the MEMS resonator.
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Patent Agency Ranking
公开(公告)号：US10727815B2
公开(公告)日：2020-07-28
申请号：US16446007
申请日：2019-06-19
Applicant: Texas Instruments Incorporated
Inventor： Jeronimo Segovia Fernandez , Peter Smeys , Ali Djabbari
Abstract: Methods, apparatus, systems and articles of manufacture are disclosed to measure a resonant sensor based on detection of group delay. An example apparatus includes a modulation manager configured to query the resonant sensor with a modulated signal including a frequency; and a resonance determiner configured to determine a resonance frequency of the resonant sensor based on a group delay associated with the resonant sensor and the frequency.
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公开(公告)号：US20240291466A1
公开(公告)日：2024-08-29
申请号：US18173950
申请日：2023-02-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Ting-Ta Yen , Jeronimo Segovia Fernandez , Sean Chang
CPC classification number: H03H9/15 , H03H3/02 , H03H9/02007
Abstract: One example described herein includes an integrated circuit (IC). The IC includes a substrate having opposing first and second sides. The second side can include a curved surface. The IC also includes a resonator on the first side. A curvature of the curved surface can reflect a property of the resonator.
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公开(公告)号：US11933670B2
公开(公告)日：2024-03-19
申请号：US17463013
申请日：2021-08-31
Applicant: Texas Instruments Incorporated
Inventor： Bichoy Bahr , Jeronimo Segovia Fernandez , Hassan Omar Ali
CPC classification number: G01J1/46 , G01J1/0403 , G01J1/0488 , G02B5/208
Abstract: An example apparatus includes: a semiconductor substrate; a mechanical resonator supported by the substrate, the mechanical resonator including an array of capacitors; and a plasmonic infrared (IR) absorber including an array of metal structures. The mechanical resonator is between the substrate and the IR absorber.
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公开(公告)号：US20230253951A1
公开(公告)日：2023-08-10
申请号：US18301324
申请日：2023-04-17
Applicant: Texas Instruments Incorporated
Inventor： Jeronimo Segovia Fernandez , Peter Smeys , Ting-Ta Yen
CPC classification number: H03H9/175 , H03H9/0542 , H03H9/02275 , H03H9/64 , H03H2009/02299 , H03H2009/155
Abstract: A laterally vibrating bulk acoustic wave (LVBAW) resonator includes a piezoelectric plate sandwiched between first and second metal layers. The second metal layer is patterned into an interdigital transducer (IDT) with comb-shaped electrodes having interlocking fingers. The width and pitch of the fingers of the electrodes determine the resonant frequency. A combined thickness of the first and second metal layers and the piezoelectric layer is less than the pitch of the interlocking fingers.
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公开(公告)号：US11489511B2
公开(公告)日：2022-11-01
申请号：US16236601
申请日：2018-12-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Jeronimo Segovia Fernandez , Peter Smeys , Ting-Ta Yen
IPC: H03H3/02 , H03H9/17 , H03H9/13 , C23C16/455 , C23C14/35 , H01L41/316 , H01L41/29
Abstract: A resonator includes a substrate, an acoustic Bragg mirror disposed above the substrate, and a bottom metal layer disposed above the acoustic Bragg mirror. The resonator also includes a piezoelectric plate disposed above the bottom metal layer. The resonator further includes a top metal layer disposed above the piezoelectric plate. The top metal layer comprises multiple fingers within a single plane and the width of each of the fingers is between 75%-125% of a thickness of the piezoelectric plate.
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